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    C124* TRANSISTOR Search Results

    C124* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C124* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


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    PDF PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7

    FRD070IF40-A

    Abstract: FRD070IF40-A-T C-118
    Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for


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    PDF STM32F4 STM32F407ZG STM32F4 STM32, STM32F4 FRD070IF40-A FRD070IF40-A-T C-118

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


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    PDF STM32 STM32F407ZG STM32,

    TS PQ4 24

    Abstract: TM4C129LNCZAD
    Text: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


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    PDF TM4C129L TS PQ4 24 TM4C129LNCZAD

    C134 transistor

    Abstract: No abstract text available
    Text: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


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    PDF LM4F232H5QD C134 transistor

    1500W Power Amplifier PCB Layout

    Abstract: smd transistor SRS transisTOR C123 transistor c124 ic q110 AC Transformer 50A 100V inductance c124 transistor U108 pa-1650 pa1650
    Text: ISL6752EVAL1Z Evaluation Board with Synchronous Rectifiers Application Note September 13, 2007 AN1341.0 Author: Richard Garcia Introduction The ISL6752EVAL1Z board utilizes Intersil’s zero voltage switching ZVS topology. In addition to the ZVS function,


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    PDF ISL6752EVAL1Z AN1341 CR107 CR106 VR102 1500W Power Amplifier PCB Layout smd transistor SRS transisTOR C123 transistor c124 ic q110 AC Transformer 50A 100V inductance c124 transistor U108 pa-1650 pa1650

    transistor c124

    Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor

    transistor c124

    Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118

    transistor c124

    Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


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    PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C124 E S W transistor IRGPC40FD2 C-123 C-118

    c124 npn

    Abstract: transistor NPN C124 OPA623X2 transisTOR C124 c124 transistor C121 C124 C202 C203 C206
    Text: * OPA623X2 WIDE BANDWIDTH, CURRENT FEEDBACK, MACROMODEL, COMPLEX VERSION * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    PDF OPA623X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 transisTOR C124 c124 transistor C121 C124 C202 C203 C206

    transistor NPN C124

    Abstract: transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205
    Text: * OPA660X2 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER COMPLEX MACROMODEL VERSION * CREATED 8/92 KL * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    PDF OPA660X2 272E-3 67E-3 248E-20 040E-18 683E-3 029E-12 017E-12 050E-12 80E-12 transistor NPN C124 transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205

    c124 npn

    Abstract: transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209
    Text: * OPA622X2 WIDE-BANDWIDTH OPERATIONAL AMPLIFIER MACROMODEL COMPLEX VERSION * * CREATED 8/92 BY KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    PDF OPA622X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209

    transisTOR C124

    Abstract: c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128
    Text: 100MHz Low Cost Triple CRT Driver CORPORATION CVA2412AX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1600 x 1280 Resolution with Pixel Clock Frequency up to 270MHz


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    PDF 100MHz CVA2412AX 270MHz CVA2412AX 85kHz CRT101 SP101 SP102 SP103 transisTOR C124 c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    SMD Transistor t08

    Abstract: transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19
    Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 25 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.


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    PDF BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF SMD Transistor t08 transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19

    transistor C143

    Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
    Text: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999


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    PDF ElanSC520 000MHz 768kHz 333MHz 318MHz ECSMA-25 ECSMA-24 ECPSM29T-32 transistor C143 C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231

    bsp126

    Abstract: marking code .gj
    Text: t,3 E ]> • b b S 3 c124 0 0 7 a a n N APC/PHILIPS 11T M S I C B BSP126 SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tra n sisto r in a m in ia tu re SO T223 envelope and designed


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    PDF bbS3t124 007aan BSP126 OT223 OT223. bsp126 marking code .gj

    SOT103

    Abstract: BF982 transistor SOT103 mosfet Transistor BF982 transistor SOT103 mosfet depletion
    Text: b3E D • b t S 3 c124 D D 7 M 3 Q 3 3ST N A P C / P H I L I P S SE n i C O N D ISIC3 BF982 A hOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,


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    PDF btS3c124 DD743Q3 BF982 OT103. SOT103 BF982 transistor SOT103 mosfet Transistor BF982 transistor SOT103 mosfet depletion

    C124 EST

    Abstract: transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2
    Text: PD - 9.1113 International ïôr Rectifier IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = • Switching-loss rating includes all “tail" losses • H EX FR E D soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGPC40FD2 O-247AC C-124 C124 EST transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2

    1RFD123

    Abstract: 1RFD120
    Text: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


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    PDF T-35-25 C-127 IRFD120, IRFD123 S545E G0Gfl37c C-128 1RFD123 1RFD120

    sgsp365

    Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
    Text: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area


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    PDF SGSP364/P365/P366 SGSP464/P465/P466 50V/400V SGSP366 SP364 SP365 SP464 SP465 SP564 SP565 sgsp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • • • • • HIGH VOLTAGE — 450V LOW QUIESCENT CURRENT — 2mA HIGH OUTPUT CURRENT — 100mA PROGRAMMABLE CURRENT LIMIT LOW BIAS CURRENT — FET Input APPLICATIONS • • • • PIEZOELECTRIC POSITIONING HIGH VOLTAGE INSTRUMENTATION ELECTROSTATIC TRANSDUCERS


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    PDF 100mA 100mA. 1N4148 1N914