105-1089-00
Abstract: C26C31 BI HM00 motorola c100 CBGA360 MNR14 TSSOP48 outline TSSOP48 AMP 120527-1 st c102
Text: # Board Station BOM file # date : Thursday November 15, 2001;10:45:25 AM # Variant : No_Stuff REFERENCE C17 C1 C5 C47 C48 C49 C50 C51 C52 C53 C54 C55 C56 C6 C2 C3 C4 C16 C58 C59 C60 C61 C63 C64 C65 C66 C68 C69 C70 C72 C73 C74 C75 C77 C78 C79 C80 C97 C98 C99 C100 C101 C102
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05085C103MA11A
05085C104MA11A
cc0508
0603YC103JAT2A
0603YC104JAT2A
RM73B1JT101J
RM73B1JT102J
rc0603
105-1089-00
C26C31
BI HM00
motorola c100
CBGA360
MNR14
TSSOP48 outline
TSSOP48
AMP 120527-1
st c102
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mip2f2
Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Text: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.
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mepco capacitor
Abstract: MEPCO mepco RESISTOR RCL 7010 DALE SOMC1603 toko rcl Toko inductor RCL somc1603 RC02HP pr01 piher
Text: Cross Reference - RCD Components Vendor RCD part# Description MIL TYPE ALLEN BRADLEY: 706A CL061 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706B CL062 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706E CL063 Conformal coated SIP networks
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CL061
CL-C-FA032
CL062
CL063
CL081
CL082
mepco capacitor
MEPCO
mepco RESISTOR
RCL 7010
DALE SOMC1603
toko rcl
Toko inductor RCL
somc1603
RC02HP
pr01 piher
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TL225
Abstract: ATC100A6R2CW150X
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TL225
ATC100A6R2CW150X
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2N7002DICT-ND
Abstract: 16SP270M schematic main board J102 fet 4SP820M T TPS5210 TPS5210EVM-116 ECSH1CD226R capacitor 4700 uF 50V X7R murata
Text: TPS5210EVM-116 Assembly File Effective Date: 02/12/99 B Current EVM Rev: B TEXAS INSTRUMENTS TPS5210EVM-116 Assembly File Table of Contents Introduction. 3
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TPS5210EVM-116
TPS5210EVM-116
SLVP116DB
SLVP116DB2
TPS5210
2N7002DICT-ND
16SP270M
schematic main board
J102 fet
4SP820M T
TPS5210
ECSH1CD226R
capacitor 4700 uF 50V
X7R murata
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Untitled
Abstract: No abstract text available
Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808FV
PTFC262808FV
280-watt
H-37275G-6/2
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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SEK4
Abstract: No abstract text available
Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808FV
PTFC262808FV
280-watt
H-37275G-6/2
SEK4
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100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Abstract: TP2350B 200w car audio amplifier mosfet based ac drive ckt diagram NS 200w audio amplifier circuit diagram professional audio limiter schematics 250w audio amplifier circuit diagram Tp2350 200W Audio Amplifier with MOSFET schematic diagram professional audio power amplifier schematics
Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion RB-TDA1400 SINGLE CHANNEL CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information–Board & Schematic Revision 4.0 Document Revision 1.3 – February 2006 GENERAL DESCRIPTION The RB-TDA1400 Reference Design is a single channel amplifier designed to provide a simple and
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RB-TDA1400
RB-TDA1400
TDA1400
TDA1400,
100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
TP2350B
200w car audio amplifier
mosfet based ac drive ckt diagram
NS 200w audio amplifier circuit diagram
professional audio limiter schematics
250w audio amplifier circuit diagram
Tp2350
200W Audio Amplifier with MOSFET schematic diagram
professional audio power amplifier schematics
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ATC100B4R3CW500X
Abstract: PTVA035002EV V1
Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down
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PTVA035002EV
PTVA035002EV
a035002
ATC100B4R3CW500X
PTVA035002EV V1
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PTFC262808SV
Abstract: No abstract text available
Text: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808SV
PTFC262808SV
280-watt
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500w audio amplifier circuit diagram
Abstract: amidon TP2150 500w power amplifier stereo TRIPATH 400W FQP13N10 TRIPATH 400w audio amplifier circuit diagram 400w mosfet audio amplifier circuit diagram 500w audio power amplifier circuit diagram
Text: Tr i path Technol ogy, I nc. - Technical Information RB-TK2150-1 RB-TK2150-2 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2150 REFERENCE BOARD Technical Information – Board Rev. 2.0 and 3.0 Revision 3.01 – October 2002 GENERAL DESCRIPTION The RB-TK2150 Reference board is a platform to provide a simple and straightforward
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RB-TK2150-1
RB-TK2150-2
TK2150
RB-TK2150
TK2150
TK2150,
RB-TK2150,
/-29V
500w audio amplifier circuit diagram
amidon
TP2150
500w power amplifier stereo
TRIPATH 400W
FQP13N10
TRIPATH
400w audio amplifier circuit diagram
400w mosfet audio amplifier circuit diagram
500w audio power amplifier circuit diagram
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TRIPATH
Abstract: TRIPATH 400W 500w audio amplifier circuit diagram LED 220w T80-2 P10346-ND C207 HS200 500w audio power amplifier circuit diagram 500w power amplifier stereo
Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm a ti on RB-TK2150-1 RB-TK2150-2 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2150 REFERENCE BOARD Technical Information – Board Rev. 3.0 Revision 3.2 – July 2005 GENERAL DESCRIPTION The RB-TK2150 Reference board is a platform to provide a simple and straightforward
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RB-TK2150-1
RB-TK2150-2
TK2150
RB-TK2150
TK2150
TK2150,
RB-TK2150,
/-29V
TRIPATH
TRIPATH 400W
500w audio amplifier circuit diagram
LED 220w
T80-2
P10346-ND
C207
HS200
500w audio power amplifier circuit diagram
500w power amplifier stereo
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d206 diode
Abstract: TRIPATH TECHNOLOGY diode d205 2w mono audio amp Panasonic amidon 1k ohm trim pot R212 VN10 vishay 100w audio amplifier circuit diagram class D TRIPATH TC2001
Text: Tr i path Technol ogy, I nc. - Technical Information EB-TK2150-1 EB-TK2150-2 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2150 EVALUATION BOARD Technical Information – Board Rev. 1.0 Revision 1.0 – November 2002 GENERAL DESCRIPTION The EB-TK2150 is a stereo evaluation board based on the TK2150 digital audio power
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EB-TK2150-1
EB-TK2150-2
TK2150
EB-TK2150
TK2150
TK2150,
EB-TK2150,
d206 diode
TRIPATH TECHNOLOGY
diode d205
2w mono audio amp Panasonic
amidon
1k ohm trim pot
R212
VN10 vishay
100w audio amplifier circuit diagram class D
TRIPATH TC2001
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LMX2531LQEBPCB
Abstract: HTSM3203-8G2 52601-S10-8 851 fci C100 C101 C102 C103 C104 C105
Text: LMX2531LQ1500E Evaluation Board Operating Instructions National Semiconductor Corporation Timing Devices Group LMX2531LQ1500EFPEB Rev 10.12.2006 L M X 2 5 3 1 L Q 1 5 0 0 E E V A L U A T I O N B O A R D O P E R A T I N G I N S T R U C T I O N S TABLE OF CONTENTS
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LMX2531LQ1500E
LMX2531LQ1500EFPEB
LMX2531LQEBPCB
HTSM3203-8G2
52601-S10-8
851 fci
C100
C101
C102
C103
C104
C105
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Untitled
Abstract: No abstract text available
Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output
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PXFC192207FH
PXFC192207FH
220-watt
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features
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PXAC261002FC
PXAC261002FC
100-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's
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PTFC210202FC
PTFC210202FC
10-watt
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Untitled
Abstract: No abstract text available
Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's
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PTFC210202FC
PTFC210202FC
10-watt
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Untitled
Abstract: No abstract text available
Text: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2496 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features
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PXAC261002FC
PXAC261002FC
100-watt
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Untitled
Abstract: No abstract text available
Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features
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PXAC260602FC
PXAC260602FC
60-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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ceramic capacitor 103 kck
Abstract: murata NPO capacitor capacitor cross reference kck capacitor C102 M c103 a ge BC NPO murata npo DC-101 ECK PANASONIC
Text: DC Film & Ceramic Capacitor Cross Reference DC FILM CAPACITOR CROSS REFERENCE * CERAMIC CAPACITOR CROSS REF ERENCE* -^WIANLFACTUBER TYPE NIC AVX/ ILLINOIS KYOCERA CAPACITOR KCK MALLORY MURATA PANASONIC PHILLIPS TDK CÉNTRALAS} RA D IA L, D ISC TEM PERATU R:
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DC-101
C-102
C-103
MR-101
ceramic capacitor 103 kck
murata NPO capacitor
capacitor cross reference
kck capacitor
C102 M
c103 a ge
BC NPO
murata npo
DC-101
ECK PANASONIC
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