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    C102 M Search Results

    C102 M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C1023-AL Coilcraft Inc SMPS Transformer, 15W, Visit Coilcraft Inc
    C1023-ALD Coilcraft Inc SMPS Transformer, 13W, ROHS COMPLIANT Visit Coilcraft Inc Buy
    C1023-ALB Coilcraft Inc SMPS Transformer, 13W, ROHS COMPLIANT Visit Coilcraft Inc Buy
    C1023- Coilcraft Inc PoE transformer, for NSC LM5070, 3.3V, SMT, RoHS Visit Coilcraft Inc
    C1023-A Coilcraft Inc SMPS Transformer, Visit Coilcraft Inc Buy
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    C102 M Price and Stock

    Kyocera AVX Components W3A41C102MAT2A

    CAP ARRAY 1000PF 100V X7R 0612
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    DigiKey W3A41C102MAT2A Cut Tape 6,485 1
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    W3A41C102MAT2A Digi-Reel 6,485 1
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    W3A41C102MAT2A Reel 4,000 4,000
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    Newark W3A41C102MAT2A Cut Tape 343 1
    • 1 $0.06
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    Bristol Electronics W3A41C102MAT2A 3,527
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    Avnet Abacus W3A41C102MAT2A Reel 16 Weeks 4,000
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    Nichicon Corporation UHW1C102MPD

    CAP ALUM 1000UF 20% 16V RADIAL
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    DigiKey UHW1C102MPD Bulk 4,720 1
    • 1 $0.91
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    Avnet Abacus UHW1C102MPD 25 Weeks 7,200
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    Chip1Stop UHW1C102MPD Bulk 1,690
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    KEMET Corporation C0805C102M1GAC7800

    CAP CER 1000PF 100V C0G/NP0 0805
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    DigiKey C0805C102M1GAC7800 Cut Tape 4,000 1
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    C0805C102M1GAC7800 Reel 4,000 4,000
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    Nichicon Corporation UVY1C102MPD

    CAP ALUM 1000UF 20% 16V RADIAL
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    DigiKey UVY1C102MPD Bulk 991 1
    • 1 $0.75
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    RS UVY1C102MPD Bulk 2,000
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    TME UVY1C102MPD 2,000
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    Chip-Germany GmbH UVY1C102MPD 2,326
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    Nichicon Corporation UHD1C102MPD1TD

    CAP ALUM 1000UF 20% 16V RADIAL
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    DigiKey UHD1C102MPD1TD Cut Tape 961 1
    • 1 $0.64
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    UHD1C102MPD1TD Ammo Pack 500 500
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    TTI UHD1C102MPD1TD Ammo Pack 5,000 500
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    • 10000 $0.176
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    TME UHD1C102MPD1TD 1,500
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    ComSIT USA UHD1C102MPD1TD 500
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    Chip 1 Exchange UHD1C102MPD1TD 1,000
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    Chip1Stop UHD1C102MPD1TD Cut Tape 4,570
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    Find more C102 M price and stock on Findchips.com

    C102 M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C102 M

    Abstract: c102 c102m transistor c102 KRC102M C102 transistor C102 M transistor Transistor KRC102M c102, transistor KRC102M transistor
    Text: SEMICONDUCTOR KRC102M MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C102 M No. Item 816 Marking 1 Description C102 Device Name KRC102M 2 3 98.06.23 M Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 816 Lot No.


    Original     		PDF KRC102M O-92M C102 M c102 c102m transistor c102 KRC102M C102 transistor C102 M transistor Transistor KRC102M c102, transistor KRC102M transistor

    C102 M

    Abstract: transistor c102 C102 M transistor C102 C102 transistor PDB-C102 c102 symbols
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS C L 0.500 [12.70] MIN 45° C L Ø0.210[5.33]


    Original     		PDF PDB-C102 PDB-C102 10x10-14 100-PDB-C102 C102 M transistor c102 C102 M transistor C102 C102 transistor c102 symbols

    transistor c102

    Abstract: C102 M C102 transistor c102 PDB-C102-I
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP


    Original     		PDF PDB-C102-I PDB-C102-I transistor c102 C102 M C102 transistor c102

    C102

    Abstract: c102 voltage
    Text: Technical form: C102 Description: Technical characteristics: Cond Number Nominal Section 2 x 0,75 mm² Formation 24 x 0,20 External Dimension mm 2,2 x 4,5 Conductor Resistance Ohm/Km ±5% 32 Operative Temperature (°C) -15°/+70° Max operative Voltage V


    Original     		PDF

    atm 194

    Abstract: No abstract text available
    Text: V23806-A8-C102 Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 10 dB 155 MBd Transceiver with Isolated Stud Pins Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42−0.15) .292−.006 Optical Centerline (2) .080


    Original     		PDF V23806-A8-C102 D-13623, atm 194

    Densei-Lambda PH50S

    Abstract: C102 transistor transistor c102 PH50S PH50S110
    Text: DENSEI-LAMBDA PH50S110 SPECIFICATION C102-01-01B MODEL ITEMS PH50S PH50S PH50S PH50S PH50S 110-5 110-12 110-15 110-24 110-28 1 Nominal Output Voltage V 5 12 15 24 28 2 Maximum Output Current A 10 4.2 3.4 2.1 1.8 W 50 50.4 51 50.4 50.4 % 80 82 83 84 84 0.55


    Original     		PDF PH50S110 C102-01-01B PH50S 185VDC 110VDC 185VDC, Densei-Lambda PH50S C102 transistor transistor c102 PH50S PH50S110

    EVK1100

    Abstract: 100n J63 EL15-21UGC Q13FC1450000614 MUSB-05-F-AB-SM-A AT32UC3A0512-0ESAL EVK1100 PWM lcd 1x16 green J3026G01DNLT 1X4 pin HEADER
    Text: 5 4 3 2 1 NM : Not Mounted 133 132 125 124 86 85 PC5 PC4 PC3 PC2 PC1 PC0 TP71 TESTPAD R18 0R B C122 2.2u 470p JTAG0 JTAG1 JTAG2 JTAG3 VCC3 R1 10k C RESETn JTAG[3.0] 4 SW1 SKRAALE010 2 VDDIN VDDCORE VDDCORE NC CLOCK Circuitry C101 C102 C103 C104 C117 C118 C119 C120


    Original     		PDF Xin32 Xout32 0-SMU4-30-30/30Xin0 SKRAALE010 EVK1100 EVK1100 100n J63 EL15-21UGC Q13FC1450000614 MUSB-05-F-AB-SM-A AT32UC3A0512-0ESAL EVK1100 PWM lcd 1x16 green J3026G01DNLT 1X4 pin HEADER

    BU102

    Abstract: CB114 p513 TLE6250G 100n X2 p514 D1034 DU102 D103 R120
    Text: 2 R113 2 C101 47µF/50V GND +5V R101 330R 100K R116 GND GND Q1 I2 8 Q2 SI R115 SO 22K 2 INH 5 WDI GND R118 10 +2V6 R119 0R 0R +5V R133 4 GND GND +5V 0R RO /RSTIN P3.5 C102 22µF/10V 10K R121 7 +5V GND C103 22µF/10V 9 GND R135 2 /RSTIN X2 P3.10 R153 JP103


    Original     		PDF F/50V F/10V JP103 BC858C LGT679-CO CB101 MBRS360T3 TLE7469GV52 BU102 CB114 p513 TLE6250G 100n X2 p514 D1034 DU102 D103 R120

    sff-8431

    Abstract: Transceivers
    Text: TRANSCEIVERS Product Specification Multirate up to 8.5GBd Limiting Transceivers TRX08GDP0410 General Description and Applications MergeOptics SFP+ LW is a multipurpose multi-rate optical transceiver module for transmission at 1310nm over single mode fiber. Supporting Fibre Channel standards make it ideally suited for storage area network applications. Its sub watt


    Original     		PDF TRX08GDP0410 1310nm TRX08GDP041 TRX08GDP0410 C1-02, ELXTRX08GDP1110EA4 sff-8431 Transceivers

    HA13536F

    Abstract: C102 M Hitachi DSA00177
    Text: HA13536F Three-Phase Brushless DC Motor Driver IC ADE-207-111B Z 3rd Edition July 1996 Description The HA13536F is a 3-phase brushless DC motor driver IC with digital speed control. It is being developed for direct drive of the spindle motor of 5 V floppy disk drives with a height of 3/4" or less. It has the following functions and features.


    Original     		PDF HA13536F ADE-207-111B HA13536F C102 M Hitachi DSA00177

    c107

    Abstract: R104 C101 CR202 c103 apex pa26 R101 R102 r-102 c201
    Text: EVALUATION KIT FOR PA26 PIN-OUT EK26 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 INTRODUCTION Fast, easy breadboarding of circuits using the PA26 are possible with the EK26 PC board. Mounting holes are provided and the


    Original     		PDF 546-APEX bypa06 CR101 CR201 CR103 CR203 CR102 CR202 EK26U c107 R104 C101 c103 apex pa26 R101 R102 r-102 c201

    CQ1265RT

    Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt
    Text: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby


    Original     		PDF FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt

    transistor c102

    Abstract: c3225 transistor POWER SUPPLYS C101 transistor C102 transistor C103 cap 1210 X5R X7R transistor c104 C103 c104
    Text: REV Ｌ SMOOTHING Features Features UTILIZING MOST ADVANCED CERAMIC MATERIAL PROCESSING AND MULTILAYER CERAMIC TECHNOLOGY, THE CAPACITANCE RANGE HAS BEEN EXTENDED TO ELECTROLYTIC CAPACITORS. - NO POLARITY - LOW ESR AND GOOD FREQUEACY RESPONCE PROMISES GOOD PEFORMANCE


    Original     		PDF E22I0004-11 C3225) C4532) C5750) transistor c102 c3225 transistor POWER SUPPLYS C101 transistor C102 transistor C103 cap 1210 X5R X7R transistor c104 C103 c104

    CQ1265RT

    Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


    Original     		PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ1265RT CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    CQ0765RT circuit diagram

    Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


    Original     		PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT circuit diagram CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201

    CQ0765RT

    Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


    Original     		PDF Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU

    transistor c102

    Abstract: HA13565F hitec servo Hitachi DSA00177
    Text: HA13565F Three-Phase Brushless DC Motor Driver IC ADE-207-226A Z 2nd. Edition April 1997 Description HA13565F is a 3-phase brushless DC motor driver IC with digital speed control. It is developed for direct drive of the spindle motor of 5V floppy disk drives. It has the following functions and features.


    Original     		PDF HA13565F ADE-207-226A HA13565F 360rpm transistor c102 hitec servo Hitachi DSA00177

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    mip2f2

    Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
    Text: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.


    Original     		PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    78L12CP

    Abstract: 2SK44SP IC104 2Sc536 MN3101 MC78L12CP TL022 W03C RD12EB MN-3101
    Text: ICKM J TL022 £102 JNE570 ICK» ÍMN3007 •C104 : m N3K 1 ICIOS :MC78ü2Cf AD1001A R104 1K í C1C3 470P io 0 6 ^1 0 8 O K M 'V K » : 2SM4SP 0 101^104 IMA15C YEL. INPUT BLU. C102 R101 .0471 7 MN3 0 0 5 IC 103 4 IC 102 3 6 2 8 kvr' oj GALANC*'r 122 R123 r 124


    OCR Scan     		PDF AD1001A TL022 JNE570 MN3007 IMA15C 50KJVR1 MN3X51 E57011 S-006X2T" RD12E 78L12CP 2SK44SP IC104 2Sc536 MN3101 MC78L12CP TL022 W03C RD12EB MN-3101

    Untitled

    Abstract: No abstract text available
    Text: . 40E D 34=n?3fl 000124fl 4 S E N I FASCO INDS/ SENISYS ' •' • • —HJ uv V i.'J.-W -v,'- • ■■ . irj-iW.hVM't.i -4 1 -8 5 Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating Temperature. -55°G to +1 0 0*0


    OCR Scan     		PDF 000124fl CLA65 C-102 CLA65 CLA65AA C-102-B C-102-A

    5121M

    Abstract: SMD 5121m 5121 M siemens C472 S200M C102 M S121-M b57620 S234 S229-M
    Text: Bauformen für Oberflächenmontage SMD Chips for surface mounting (SMDs) Maßbild Typ Outline drawing Type C620 1,25±o,i5 r Nenn­ Toleranz widerstand Rated Tolerance resistance ^25 O A R 25 220 ±5% , ±10% , 330 470 680 1k 10 k 100 k 1 ,2 5 m a x S-Wert


    OCR Scan     		PDF B57620- C221-+ C331-+ C471-+ C681-+ C102-+ 5121M SMD 5121m 5121 M siemens C472 S200M C102 M S121-M b57620 S234 S229-M