IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
IC 7403
MMPQ2222
PZT2222A
SOIC-16
MMBT2222A
NMT2222
PN2222A
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PDF
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BV03C
Abstract: DVR RXD1
Text: Application Note 1804 SLOC TW3801-C1, TW3811- C1 Application Note 1 AN1804.0 November 27, 2012 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2012. All Rights Reserved
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Original
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TW3801-C1,
TW3811-
AN1804
1-888-INTERSIL
OpeW3811
TW3811
BV03C
DVR RXD1
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PDF
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SMV1236-004LF
Abstract: marking AF SMV1232 SMV1232-004 SMV1232-011 SMV1232-074 SMV1232-079 SMV1233-079 SMV1237 SMV1234-079LF
Text: DATA SHEET SMV1232–SMV1237: Hyperabrupt Tuning Varactors Features High capacitance ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 Low series resistance for low phase noise ● Multiple packages SOT-23, SOD-323, SC-70 and SC-79 ● Designed for high volume commercial applications
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Original
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SMV1232
SMV1237:
OT-23,
OD-323,
SC-70
SC-79
SMV1237
SMV1236-004LF
marking AF
SMV1232-004
SMV1232-011
SMV1232-074
SMV1232-079
SMV1233-079
SMV1234-079LF
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PDF
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SMV1232
Abstract: SMV1232-011 SMV1232-079 SMV1233-079 SMV1234-079 SMV1235-079 SMV1236-079 SMV1237
Text: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial
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Original
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SMV1232
SMV1237
OT-23,
OD-323,
SC-70
SC-79
SMV1237
SMV1232-011
SMV1232-079
SMV1233-079
SMV1234-079
SMV1235-079
SMV1236-079
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PDF
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SMV1232
Abstract: smv1234-001 SMV1237 SMV1233-079
Text: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial
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Original
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SMV1232
SMV1237
OT-23,
OD-323,
SC-70
SC-79
SMV1237
smv1234-001
SMV1233-079
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PDF
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SMV1232
Abstract: smv1234-001 varactor diode SPICE model SMV1233-079 smv1236-011 SMV1235-011 SMV1232-011 SMV1232-079 SMV1234-079 SMV1235-079
Text: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial
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Original
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SMV1232
SMV1237
OT-23,
OD-323,
SC-70
SC-79
SMV1237
smv1234-001
varactor diode SPICE model
SMV1233-079
smv1236-011
SMV1235-011
SMV1232-011
SMV1232-079
SMV1234-079
SMV1235-079
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PDF
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BCW29
Abstract: 1C11
Text: SEMICONDUCTOR BCW29 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C1 1 2 Item Marking Description Device Mark C1 BCW29 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BCW29
OT-23
BCW29
1C11
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PDF
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MMPQ2907
Abstract: SOIC-16
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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Original
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MMPQ2907
SOIC-16
MMPQ2907
SOIC-16
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PDF
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CBVK741B019
Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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Original
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MMPQ2907
SOIC-16
CBVK741B019
F63TNR
L86Z
MMPQ2907
NDM3000
NDM3001
SOIC-16
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PDF
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Untitled
Abstract: No abstract text available
Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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Original
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MMPQ2907
SOIC-16
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PDF
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L50RIO
Abstract: 37GL53010-C1 L53II revC1 rqw200n03 L50RI0 ITE8512E L53II L53IIX bd n49 ao4468
Text: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53010-C1 D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 PG20 PG21 PG22 PG23 PG24 PG25 PG26 PG27 PG28
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L53II0
37GL53010-C1
82GL53010-C1
965GM
9LPRS365
GL827
RTL25)
PJP35
PJP36
PC258
L50RIO
L53II revC1
rqw200n03
L50RI0
ITE8512E
L53II
L53IIX
bd n49
ao4468
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PDF
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ITE8512E
Abstract: rqw200n03 L50RIO 37GL53010-C1 L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II
Text: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53110-C1 SMSC D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE
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Original
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L53II0
37GL53010-C1
82GL53110-C1
965GM
9LPRS365
GL827
PJP35
PJP36
PC258
max8744
ITE8512E
rqw200n03
L50RIO
L53II revC1
ITE8512
L50RI0
FP6137B
IT8512E
L53II
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PDF
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TO253
Abstract: transistor k 790 PLCC-20
Text: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50
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Original
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24-Sep-96
O-237
O-236
OT-23)
O-253
OT-143)
TO253
transistor k 790
PLCC-20
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PDF
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TO253
Abstract: PLCC-20 1307 TRANSISTOR TO-253 SILICONIX
Text: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50
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Original
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24-Sep-96
O-237
O-236
OT-23)
O-253
OT-143)
TO253
PLCC-20
1307 TRANSISTOR
TO-253 SILICONIX
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PDF
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BCW29R
Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV BCW31 BCW32 720 sot23 DSA003672
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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Original
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BCW29
BCW30
BCW29
BCW30
BCW29R
BCW30R
BCW31
BCW32
MV SOT23
PARTMARKING MV
BCW31
BCW32
720 sot23
DSA003672
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter
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Original
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SMBD7000/
MMBD7000
VPS05161
EHA07005
MMBD7000
EHB00137
EHB00138
Feb-18-2002
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PDF
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BAV70
Abstract: No abstract text available
Text: BAV70 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BAV70
VPS05161
EHA07004
EHB00066
EHB00067
Jul-31-2001
EHB00068
BAV70
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PDF
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BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Text: BAV99 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99
VPS05161
EHA07005
EHB00076
EHB00077
Jul-30-2001
EHB00078
BAV99
free pdf transistor a7s
bav99 marking
diode bav
A2 SOT23
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PDF
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BAW56 application note
Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Text: BAW56 Silicon Switching Diode Array 3 For high-speed switching applications Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR
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Original
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BAW56
VPS05161
EHA07006
EHB00091
EHB00092
Jul-31-2001
EHB00093
BAW56 application note
A1s sot23
BAW56
V6010
ta1504
A2 SOT23
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PDF
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BAV170
Abstract: No abstract text available
Text: BAV170 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol
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BAV170
VPS05161
EHA07004
EHB00081
Aug-20-2001
EHB00082
BAV170
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PDF
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a1 sot23
Abstract: BGX400
Text: BGX400 Silicon Switching Diodes 3 Switching applications High breakdown voltage Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BGX400
VPS05161
EHA07365
Aug-20-2001
a1 sot23
BGX400
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PDF
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BAV74
Abstract: No abstract text available
Text: BAV74 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BAV74
VPS05161
EHA07004
EHB00071
EHB00072
Jul-31-2001
EHB00073
BAV74
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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SMBD7000
EHA07005
VPS05161
Jul-31-2001
EHB00137
EHB00138
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PDF
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BCW29R
Abstract: BCW30
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995_ PARTMARKING DETAILS - BCW29 BCW30 BCW29R BCW30R - C1 C2 C4 C5 COMPLEMENTARY TYPES - BCW29 - BCW31 BCW30 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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OCR Scan
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BCW29
BCW30
BCW29R
BCW30R
BCW30
BCW31
BCW32
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PDF
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