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    C-SERIES IGBT INSTRUCTIONS Search Results

    C-SERIES IGBT INSTRUCTIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C-SERIES IGBT INSTRUCTIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Features  Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


    Original     		PDF APTGF300U120DG

    Untitled

    Abstract: No abstract text available
    Text: APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Features  Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


    Original     		PDF APTGF200U120DG

    Untitled

    Abstract: No abstract text available
    Text: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK E Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


    Original     		PDF APTGF300U120DG

    Untitled

    Abstract: No abstract text available
    Text: APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK E Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current


    Original     		PDF APTGF200U120DG

    igbt 400V 40A

    Abstract: No abstract text available
    Text: FGB40N60SM tm 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop 2nd generation IGBTs offer the optimum performance for welding and PFC applications where low conduction


    Original     		PDF FGB40N60SM FGB40N60SM O-263AB/D2-PAK igbt 400V 40A

    Untitled

    Abstract: No abstract text available
    Text: FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


    Original     		PDF FGAF20N60SMD

    Untitled

    Abstract: No abstract text available
    Text: FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


    Original     		PDF FGAF40N60SMD

    Untitled

    Abstract: No abstract text available
    Text: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


    Original     		PDF FGA30N65SMD

    400v 20A ultra fast recovery diode

    Abstract: No abstract text available
    Text: FGAF20N60SMD 600V, 20A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.


    Original     		PDF FGAF20N60SMD FGAF20N60SMD 400v 20A ultra fast recovery diode

    FGAF40N60SMD

    Abstract: smps welder inverter fgaf40n
    Text: FGAF40N60SMD 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.


    Original     		PDF FGAF40N60SMD FGAF40N60SMD smps welder inverter fgaf40n

    Untitled

    Abstract: No abstract text available
    Text: FGH60N60SMD 600 V, 60 A Field Stop IGBT Features General Description o • Maximum Junction Temperature: TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.


    Original     		PDF FGH60N60SMD

    din 7985

    Abstract: din 6900 push switch 6mm c-series IGBT instructions din 46244 A 100N DIN46244 IGBT AS switch SCREW din 7985 AN2002
    Text: APPLICATION NOTE Date:2002-07-09 Page 1 of 6 AN-Number: AN2002-08 Mounting instructions 62mm C-series IGBT - modules half-bridges and single switches 1. Heat sink The mounting surface must be clan and free of particles. Flatness ≤ 25µm on a length of 100 mm


    Original     		PDF AN2002-08 53N53N EN61210 din 7985 din 6900 push switch 6mm c-series IGBT instructions din 46244 A 100N DIN46244 IGBT AS switch SCREW din 7985 AN2002

    4500a

    Abstract: APT0502 APT0601 APTGF300U120DG
    Text: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Benefits • Outstanding performance at high frequency operation • Stable temperature behavior


    Original     		PDF APTGF300U120DG 4500a APT0502 APT0601 APTGF300U120DG

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKA15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C 


    Original     		PDF IKA15N60T

    Untitled

    Abstract: No abstract text available
    Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current


    Original     		PDF APTGL475U120DAG

    Untitled

    Abstract: No abstract text available
    Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C G CK VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features  Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current


    Original     		PDF APTGL475U120DAG

    APT0502

    Abstract: APT0601
    Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current


    Original     		PDF APTGL475U120DAG APT0502 APT0601

    K15T60

    Abstract: IKA15N60T 15A 400 - 600V FAST DIODES
    Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKA15N60T PG-TO-220-3-31 K15T60 IKA15N60T 15A 400 - 600V FAST DIODES

    Untitled

    Abstract: No abstract text available
    Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKA15N60T

    Untitled

    Abstract: No abstract text available
    Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : •         C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKA15N60T

    k15t60

    Abstract: IKA15N60T marking k15t60
    Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKA15N60T P-TO-220-3-31 O-220 k15t60 IKA15N60T marking k15t60

    Untitled

    Abstract: No abstract text available
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C


    Original     		PDF IKA10N60T

    k15t60

    Abstract: FAST RECOVERY DIODE diode 400V 4A FAST RECOVERY DIODE 200ns 8A 40V marking k15t60 5014-3 DEVICE MARKING CODE 150A fast recovery diode 1a trr 200ns MARKING CODE 150A IKA15N60T
    Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKA15N60T P-TO-220-3-31 O-220 k15t60 FAST RECOVERY DIODE diode 400V 4A FAST RECOVERY DIODE 200ns 8A 40V marking k15t60 5014-3 DEVICE MARKING CODE 150A fast recovery diode 1a trr 200ns MARKING CODE 150A IKA15N60T

    k10t60

    Abstract: 5304 marking code IKA10N60T
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5µs


    Original     		PDF IKA10N60T Oct-04 k10t60 5304 marking code IKA10N60T