BL201220B5388
Abstract: BL2012-20B5388 ACX Multilayer Chip C 5388 equivalent C 5388 ACX balun multilayer GHz
Text: ACX Advanced Ceramic X BL 2012 Series Multilayer Chip Baluns Features Monolithic SMD with small, low-profile and light-weight type. Applications 0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN,
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BL201220B5388_
BL201220B5388
BL2012-20B5388
ACX Multilayer Chip
C 5388 equivalent
C 5388
ACX balun
multilayer GHz
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bl2012
Abstract: BL201205B5388 C 5388 BL2012-05B5388 BL2012-05B ACX balun ACX Multilayer Chip multilayer GHz
Text: ACX Advanced Ceramic X BL 2012 Series Multilayer Chip Baluns Features Monolithic SMD with small, low-profile and light-weight type. Applications 0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN,
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BL201205B5388_
bl2012
BL201205B5388
C 5388
BL2012-05B5388
BL2012-05B
ACX balun
ACX Multilayer Chip
multilayer GHz
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BL201210B5388
Abstract: C 5388 BL201210 ACX balun ACX Multilayer Chip multilayer GHz C 5388 equivalent
Text: ACX Advanced Ceramic X BL 2012 Series Multilayer Chip Baluns Features Monolithic SMD with small, low-profile and light-weight type. Applications 0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN,
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BL201210B5388_
BL201210B5388
C 5388
BL201210
ACX balun
ACX Multilayer Chip
multilayer GHz
C 5388 equivalent
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BL201205K5388
Abstract: BL2012-05K5388 ACX Multilayer Chip C 5388 ACX balun multilayer GHz
Text: ACX Advanced Ceramic X BL 2012 Series Multilayer Chip Baluns Features Monolithic SMD with small, low-profile and light-weight type. Applications 0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN,
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BL201205K5388_
BL201205K5388
BL2012-05K5388
ACX Multilayer Chip
C 5388
ACX balun
multilayer GHz
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BL160810P5388
Abstract: BL1608-10P5388 C 5388 ACX balun ACX Multilayer Chip multilayer GHz
Text: ACX Advanced Ceramic X BL 1608 Series【Preliminary】 Multilayer Chip Baluns Features Monolithic SMD with small, low-profile and light-weight type. Applications 0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN, etc.
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BL160810P5388_
BL160810P5388
BL1608-10P5388
C 5388
ACX balun
ACX Multilayer Chip
multilayer GHz
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Untitled
Abstract: No abstract text available
Text: JOG-00984 OKI Electronics Components Preliminary OF3241N Rev. 1 [6. 2002] 10Gbps APD-Preamplifier surface mount receiver module 1. DESCRIPTION OF3241N is a 10Gbps receiver module that incorporates an InGaAs avalanche photodiode and a low noise TIA in a hermetically sealed package. OF3241N adopts compact surface mount package, minimizing the space on PCB.
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JOG-00984
OF3241N
10Gbps
OF3241N
OC-192
-26dBm
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cmos 4000 series
Abstract: mhb 4011 cmos 4016 transistor 2248 CMOS 4024 with truth table working of IC 4017 MH 7400 4017-DECADE COUNTER mhb 4013 MHB 4012
Text: - ¿V 'V â - -—• c^ö ö 0 0 5388 FERRANTI INTERDESIGN, INC. . " . H I ^^M ffS E R IE S HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15M Hz at 5V.
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40MHz
15MHz
cmos 4000 series
mhb 4011
cmos 4016
transistor 2248
CMOS 4024 with truth table
working of IC 4017
MH 7400
4017-DECADE COUNTER
mhb 4013
MHB 4012
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6DI75M-050
Abstract: No abstract text available
Text: 6DI75M-050 75A =E i > z L - ) V /< 7 - ‘ Outline Drawings P O W E R T R A N S IS T O R M O D U L E F e a tu re s • fflfthpE High DC Current Gain • High Speed S w itching : A p p lic a tio n s • General Purpose Inverter • ffki&WWM$icW U ninterruptible Power Supply
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6DI75M-050
J-M47
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EXB850
Abstract: JIXB850 t930 30S3
Text: EXB850 I£ 1 * : Outline Drawings • $ t ü : D es c rip tio n f|g, *± IG B T K 7 - f IG BT ô > «ffi*tt< tLT fcÿâ T o -y KICtt, IGBTttfêÊtëfr^Tffifc <31 ■ fë J t: ■ F ea tu re s ■ « fiH E M S : Equivalent Circuit Schematic • » « % f ! M
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EXB850
05iUT
l95t/R89
EXB850
JIXB850
t930
30S3
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B1680
Abstract: No abstract text available
Text: 6 D 1 5 M A - 0 5 5 o a i S ± V < 7 — = e i> a — I POWER TRANSISTOR MODULE I Outline Drawings ^ I« QOJ,' 11.5 [ ^5 14 *.$ I II H.S I 4.5 « ll.S 1.5 j7 W 17 • * ( # 5 : Features • jtSfflhFE High DC Current Gain High Speed Switching • SiSLT.-fV-y-V?'
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I95t/R
B1680
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1MBI400L-120
Abstract: M116 HE11A inverter lg ig drive
Text: 1MBI400L-120 M ± ' < r7 - = £ ì > 3 . - i \ , : Outline Drawings IG BT IGBT MODULE : Features y * > 7 H ig h S p e e d S w itc h in g • /± EW V o ltag e D rive •t o 9 > x* =l- » mm L o w In d u c ta n c e M o d u le S tru c tu re : Applications
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1MBI400L-120
1MBI400L-120
M116
HE11A
inverter lg ig drive
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UTC 1316
Abstract: 251C 30S3 UTC 1316 amplifier
Text: 1 M B I 6 L P - 0 6 6 o o a • W f ê ' + î È : Outline Drawings IGBT . _93±03 IG B T MODULE ■ 4 : Feat ur es • f t i S . X 'f "J + ' s y • ■ J E td b H igh S peed S w itc h in g V olta ge D rive L o w In d u c ta n c e M o d u le S tru c tu re
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MBI600LP-060
l95t/R89
UTC 1316
251C
30S3
UTC 1316 amplifier
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a2183
Abstract: a2184 SK12-80 SK1280 SK128 2SK1280 SC-65 atz drawings asus schematic
Text: 2SK1280 FUJI POWER MOS-FET N- CHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • Features lOutline Drawings • I lclude fast recovery diode • High voltage • Low driving power ■ ¿\pplications • Motor controlers • I iverters • Choppors ■Vlax. Ratings and Characteristics
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SK1280
SC-65
a2183
a2184
SK12-80
SK1280
SK128
2SK1280
SC-65
atz drawings
asus schematic
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Untitled
Abstract: No abstract text available
Text: 1 M B I 6 0 0 L P - 0 6 0 6 o o a IGBT IG BT M O D U L E •<NJt : Features • "J + 's V • JB E K High Speed Switching Voltage Drive Low Inductance Module Structure : Applications •i > '< — 9 • A C , D C if — # 7 > ~f Inverter for Motor Drive
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l95t/R89
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LBB112V
Abstract: LB8112V 3191-SSOP30 D3096HA
Text: Ordering number : EN5388 Monolithic Digital 1C LB8112V No. 5388 SAiYO Loading Motor Driver with Built-in Sensor Amplifiers i Overview Package Dimensions The LB8112V integrates a driver for a video cassette deck loading motor and the associated peripheral sensor
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EN5388
LB8112V
LB8112V
LBB112V
3191-SSOP30
D3096HA
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ETG81-O5OA
Abstract: TI 121 Transistor diode b22 ETG81-050A B-23 M102 T151 transistor ac 151
Text: ETG81-O5OA 30a : Outline Drawings — )V POWER TRANSISTOR MODULE F e a tu re s • 7 l) — x) K rtffll Including Free W heeling Diode • hFE*'rfl5^N High DC Current Gain Insulated Type IffliÊ ’ A p p lic a tio n s > 9 Power S w itching • AC i — 9 V M
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ETG81-O5OA
E82988
19S24^
I95t/R89)
Shl50
TI 121 Transistor
diode b22
ETG81-050A
B-23
M102
T151
transistor ac 151
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251C
Abstract: 30S3 M121 T151 T460
Text: 1 M B I 6 0 0 L P - 0 6 0 6 o o a IGBT IG BT M O D U L E • < N J t : Features "J + 's V • • JB EK High Speed S w itching Voltage Drive Low Inductance M odule Structure : A p p lic a tio n s > '< — 9 • i • A C , D C if — # 7 > ~f Inverter for Motor Drive
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MBI600LP-060
l95t/R89
251C
30S3
M121
T151
T460
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m9ac
Abstract: 6MBI200FB-060 200a liu 6mb120 T151 T930 OV16E MPC600 T930 S20
Text: 6MBI200FB-060 200A IGBT *'>3-iV : Outline Drawings IGBT MODULE Features Low Saturation Voltage • HJESMfi (M O S -V “ h flliS ) • Voltage Drive Variety of Power Capacity Series t’3>l « l - a - ^ 3 l « . q q \ . , Si, I A p p lica tio n s #7 >7 —
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6MBI200FB-060
l95t/R89
Shl50
m9ac
6MBI200FB-060
200a liu
6mb120
T151
T930
OV16E
MPC600
T930 S20
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transistor f151
Abstract: transistor b136
Text: 6DI15MS-05005A • O utline D ra w in g s POW ER TR A N S IS TO R M O D U LE : Features • h F E * '' S t ' H igh D C C urrent Gain • KA^jSv,' • 7' J — High speed sw itching J"— K 1^9HSc • Inclu ding F r e e w h e e lin g D iode Insulated Type
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6DI15MS-05005A)
I95t/R89)
transistor f151
transistor b136
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54ls374
Abstract: No abstract text available
Text: g > M ilita ry 54L S 374 MOTOROLA O c ta l D Flip-Flop W ith 3 -S ta te O utputs MPO ELECTRICALLY TESTED PER: MIL-M-38510/32503 The 54LS374 is a high-speed, low-power Octal D-type Flip-Flop featuring separate D-type inputs for each flip-flop and 3-state outputs for
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MIL-M-38510/32503
54LS374
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20P8
Abstract: No abstract text available
Text: PAL10H20P8 Combinatorial ECL PAL Device F eatures/B enefits Ordering Information • 20 logic Inputs: 12 external, 8 feedback • 8 outputs with programmable polarity PAL10H 20P8 NS STD • ECL technology for ultra-high speed—max tp p - 6 ns PROGRAMMABLE
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24-pin
28-pin
PAL10H20P8
PAL10H
20P8
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EVM31-050A
Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
Text: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls
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EVM31-050A(
E82988
E9TS5S35^
19S24
l95t/R89
EVM31-050A
ae9t
b49 diode
M203
P151
T151
JU 0003
EVM31-050
JT diode
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i251
Abstract: ECL10KH PAL10H20P8
Text: ADV MICRO PLA/PI.E/AR5AYS 1 t 5 E § ;1M7S5L ml27itMM t , T -4 6 -1 3 -4 ? P A L I0H20P8 Combinatorial EC L PAL Device Ordering Information Features/Benefits • 20 logic Inputs: 12 external, 8 feedback PAL10H20P8 NS STO • 8 outputs with programmable polarity
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05S7SSb
T-46-13-4?
PALI0H20P8
24-pln
28-pln
ECL10KH-
PAL10H20P8
i251
ECL10KH
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Untitled
Abstract: No abstract text available
Text: 2M BI300LB-060 3 ooa IGBT MODULE • if t it : : Features • ¡ S i i U X ' f H i g h • S p e e d S w itc h in g L o w S a tu ra tio n V o lta g e • & A t}*r— h f lt ia ) • H ig h In p u t Im p e d a n c e M o d u le P a c k a g in g ■ f f liH : A p p lica tio n s
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BI300LB-060
95t/R89
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