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Text: 2851-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Abstract: No abstract text available
Text: 2851-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2851-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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EN2851
Abstract: 2SC4428 D1898
Text: Ordering number:EN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.
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EN2851
2SC4428
00V/6A
2039D
2SC4428]
EN2851
2SC4428
D1898
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Abstract: No abstract text available
Text: Ordering number:ENN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.
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ENN2851
2SC4428
00V/6A
2039D
2SC4428]
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pg 3 ab
Abstract: CM2851ACIM25 CM2851SIM25
Text: CM2851 150mA CMOS LDO WITH EN & PG GENERAL DESCRIPTION FEATURES The CM2851 family is positive, linear regulators featured low ! Very Low Dropout Voltage quiescent current 30µA typ. with low dropout voltage, ! Low Current Consumption: Typ. 30µA, Max. 35µA
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CM2851
150mA
CM2851
OT-23-5
pg 3 ab
CM2851ACIM25
CM2851SIM25
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Untitled
Abstract: No abstract text available
Text: CM2851 150mA CMOS LDO WITH EN & PG GENERAL DESCRIPTION FEATURES The CM2851 family is positive, linear regulators featured low ! Very Low Dropout Voltage quiescent current 30µA typ. with low dropout voltage, ! Low Current Consumption: Typ. 30µA, Max. 35µA
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CM2851
150mA
CM2851
OT-23-5
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C 2851 transistor
Abstract: 2SC4428 2851 transistor npn
Text: Ordering number: EN 2851 _ 2 S C 4 4 2 8 No.2851 N P N Triple Diffused Plan ar Silicon Transistor Sw itching R egulator Applications F eatu res . High breakdown voltage, high reliability •Fast switching speed tf: O.lps typ •W ide A SO •Adoption of M B IT process
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2SC4428
300ps
C 2851 transistor
2851 transistor npn
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Untitled
Abstract: No abstract text available
Text: Z * EX4R XR-2851 PRELIMINARY INFORMATION Ground Fault Interrupter FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR -2851 G ro u n d F a u lt In te rru p te r is designed to be used in c irc u its p ro vid in g g rou n d fa u lt p ro te c tio n fo r A C
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XR-2851
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
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2n3298
Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max
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2N1613
2N16I3A
2N1613B
2N17I1
2N17IIA
2N3725A
2N3947
2N40B0
2N4137
2N4207
2n3298
2N2360
2n2694
2N3208
2N321
2N321D
IN219
2N2195B
2n2888
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2851 transistor npn
Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to
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0S0433Ã
CI003L
-H053
2851 transistor npn
A1409-1
Transistor A14
2N2907
A-04
a1-4095
PNP 2N2907
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2851 transistor npn
Abstract: C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v
Text: Ordering number: EN 2851 2SC4428 NPN Triple Diffused Planar Silicon Transistor SM YO l i 800V/6A Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability • F ast switching speed tf: 0.1 ps typ •W ideASO • Adoption of MBIT process
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2SC4428
00V/6A
300ps
2851 transistor npn
C 2851 transistor
2SC4428
EN2851
1S001
transistor 800v
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2N9308
Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5
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00DDS7Ã
T-A7-01
2N497
12/3S
30/S9
2N3725A
2N3947
2N4080
2N4137
2N4207
2N9308
2N221BA
2N69S
2N3304
2M2193
2NI893
2N236S
2N408
2N238
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transistor k 2843
Abstract: K 2843 2SC2832 transistor k 2837 transistor 2839
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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860MHz,
transistor k 2843
K 2843
2SC2832
transistor k 2837
transistor 2839
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Untitled
Abstract: No abstract text available
Text: 3875081 01E G E S O L I D STATE 19820 Optoelectronic S pecifications_ H A R R IS S E fllC O N D SECTOR 37E D • 43Q2571 00272ÖH 0 ■ T- V/- 8 3 Photon Coupled Isolator CNX35, CNX36 G a As Infrared Emitting Diode & N PN Silicon Photo-Transistor
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43Q2571
CNX35,
CNX36
92CS-42662
92CS-429S1
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MRF838
Abstract: MRF838a
Text: MOTOROLA SEMICONDUCTOR MRF838 MRF838A TECHNICAL DATA The RF Line 1 W — 870 M Hz RF POWER TRANSISTORS N P N S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . d e s i g n e d f o r 12.5 v o lt UHF la rg e -s ig n a l, c o m m o n - e m itte r a m p lifie r a p p lic a tio n s in in d u s tr ia l a n d c o m m e rc ia l FM e q u ip m e n t
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MRF838
MRF838A
MRF838,
MRF838a
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BGY90B
Abstract: VS1M VSI drive mw 137 A-04 a2849
Text: N AMER PHILIPS/DISCRETE ObE J> DEVELOPMENT DAi Ai • ” b 1353^31 Q 0 1 3 H Û Û * JJ-iJ L .U U .J I BGY90B This data sheat contains advanc« in form ation and specifications are subject to change w ith o u t notice. V of U.H.F. POWER MODULE The B G Y 9 0 B is a two stage u.h.f. power module designed for use in mobile transmitting equipment
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BGY90B
BGY90B
VS1M
VSI drive
mw 137
A-04
a2849
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MRFA2604
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transm itter The MRFA2604 is a solid state class AB am plifier specifically designed for TV transposers and transmitters. This am plifier incorporates microstrip technology
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MRFA2604
J/230
MRFA2604
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Untitled
Abstract: No abstract text available
Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz
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OT-23/
OT-143
HSMS-285X
HSMS-285X
OT-23
OT143
DD127Ã
5963-2333E
5963-5030E
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HSMS2851
Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X
Text: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/|iW at 2.45 GHz 22 mV/|uW at 5.80 GHz
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HSMS-285X
OT-23/
OT-143
5SOT-23
OT-23
OT143
5963-0917E
5963-2333E
HSMS2851
3BT SOT-23
sot 23 marking code rad
transistor tag 306
marking 2u sma
microstrip RFID tag
HSMS-2851
HSMS2850
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D1314
Abstract: SN75361 207B SN75107A SN75107B SN75207 SN75207B SN55109A
Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS S LLS Q 69A - D1314, JULY 1973 - REVISED JANUARY 1993 □ O R N PACKAGE TO P V IE W Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics
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SN75207,
SN75207B
SLLSQ69A-
D1314,
SN75107A
SN75107B
10-mV
SN55109A,
SN75109A,
D1314
SN75361
207B
SN75207
SN55109A
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2H2222A
Abstract: 2MM72 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B
Text: jomitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon small signal transistors Maximum Ratings Oevke Type Package Pd Ambient mW 2*497 2N498 2MS6 2m i mat mn mat mm NPN NPN NPN NPN NPN TO TO TO TO TO 5 5 5 5 5 800 BOO BOO 800 600 E le c tfiu r il ChaiacTu fis ti! s
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2N498
2MM72
2N37W
2N372S
2N4072
2H2222A
2N2696
2N2708
2N2312
2n2959
2n708s
2N2195B
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29T1
Abstract: H066300T
Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV HITACHI Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals R, G and B.
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HD66300T
HD66300T
29T1
H066300T
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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