transistor a338
Abstract: a1792 transistor A347
Text: Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2026 Series is a two-stage thin-film bipolar RF amplifier using resistive feedback and active bias for temperature
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AVANTEK uto
Abstract: Avantek mixer 18 ghz active
Text: H Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features Description Pin Configuration • Frequency Range: 10 to 2000␣MHz The 2026 Series is a two-stage thin-film bipolar RF amplifier using resistive feedback and
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2000MHz
5963-2486E
AVANTEK uto
Avantek mixer 18 ghz active
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2026 Series is a two-stage thin-film bipolar RF amplifier using resistive feedback and active bias for temperature
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TEA1098a for Application
Abstract: No abstract text available
Text: UTC TEA1098A LINEAR INTEGRATED CIRCUIT SPEECH AND HANDSFREE DESCRIPTION The UTC TEA1098A is an analog bipolar circuit dedicated for telephony applications. It includes a line interface, handset HS microphone and earpiece amplifiers, handsfree (HF) microphone and loudspeaker amplifiers and a duplex
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TEA1098A
TEA1098A
OP-40
QW-R108-016
TEA1098a for Application
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ifr 2026 service manual
Abstract: electromagnetic pulse generator kit 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM fsk modulation using 555 480 MHz generator Analog Multiplier for am modulation fsk to RS-232 converter EN50082-1 EN61010-1
Text: 10 kHz to 2.4 GHz MultiSource Generator Signal Generators 2026 Up to three fully functional signal generators in one unit offering a unique solution for complex tests on receivers, components and systems Two or three high quality RF signal generators in a space efficient
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Abstract: No abstract text available
Text: 2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G"
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2SA1213
OT-89
OT-89
060TYP
118TYP
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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Untitled
Abstract: No abstract text available
Text: NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026
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OT-363,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications 0.087 2.20 0.074(1.90) • NPN epitaxial silicon, planar design 0.010(0.25) 0.054(1.35) 0.045(1.15) 0.030(0.75) 0.021(0.55) MECHANICAL DATA
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BC857BS
OT-363,
MIL-STD-750,
Voltage30)
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Untitled
Abstract: No abstract text available
Text: BC847CS/BC857CS GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 150 mW FEATURES • General Purpose Amplifier Applications • Collector Current IC = -100mA • MECHANICAL DATA Case: SOT-363 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.006 grams
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BC847CS/BC857CS
-100mA
OT-363
MIL-STD-750
BC847CS
BC857CS
BC847CS
BC857CS
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Untitled
Abstract: No abstract text available
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS 45 Volts 250 mWatts Unit：inch mm DFN 3L 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45) • Collector current IC = 100mA
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BC847BFN3
100mA
2002/95/EC
IEC61249
MIL-STD-750,
2012-REV
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Untitled
Abstract: No abstract text available
Text: BC847CPN DUAL GENERAL PURPOSE TRANSISTORS NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier appliactions. They are housed in the SOT-363 which is designed for low power surface mount applications. FEATURES • MECHANICAL DATA
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BC847CPN
OT-363
MIL-STD-750
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TRANSISTOR C 2026
Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
Text: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026
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2SB817E
2SB817E
MIL-STD-750,
TRANSISTOR C 2026
2SB817e equivalent
AH TRANSISTOR
transistor PNP
how to test transistor
transistor 1503
mexico transistor power
2sb817
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TN3055
Abstract: tm3055
Text: RF AMPLIFIER MODEL TM3055 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +47 dBm Typ. Second Order Two Tone Intercept Point . +42 dBm (Typ.) Third Order Two Tone Intercept Point . +29 dBm (Typ.)
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TM3055
TM3055,
TN3055,
BX3055,
TN3055
tm3055
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BC807
Abstract: BC807-16 BC807-25 BC807-40
Text: BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 225 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives
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BC807
500mA
2002/95/EC
OT-23,
BC807-16
MIL-STD-750,
BC807-25
BC807-40
BC807-16
BC807-25
BC807-40
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BC817
Abstract: BC817-16 BC817-25 BC817-40 EB-500
Text: DATA SHEET BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 300 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives
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BC817
500mA
2002/95/EC
OT-23,
BC817-16
MIL-STD-750,
BC817-25
BC817-40
BC817-16
BC817-25
BC817-40
EB-500
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102009
Abstract: PNP POWER TRANSISTOR SOT23-6L e50u
Text: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER 300mW FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • In compliance with EU RoHS 2002/95/EC directives
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300mW
150mA
2002/95/EC
OT23-6L
MIL-STD-750
013gram
102009
PNP POWER TRANSISTOR SOT23-6L
e50u
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I 6506
Abstract: 5091-8326E HRS108
Text: Silicon Bipolar Monilithic Amplifiers Reliability Data MSA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the
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MIL-STD-750.
MIL-STD-202,
DOD-HDBK-1686
I 6506
5091-8326E
HRS108
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Untitled
Abstract: No abstract text available
Text: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 330 mW FEATURES • General purpose amplifier applications 0.120 3.04 • NPN epitaxial silicon, planar design 0.110(2.80) • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives
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BC817
500mA
2002/95/EC
OT-23,
MIL-STD-750,
BC817-16
BC817-25
BC817-40
2011-REV
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7A PNP POWER TRANSISTOR "SOT23"
Abstract: No abstract text available
Text: BC807 SERIES 45 Volts VOLTAGE POWER SOT-23 330 mWatts Unit：inch mm • General purpose amplifier applications 0.120(3.04) • PNP epitaxial silicon, planar design 0.110(2.80) 0.006(0.15)MIN. FEATURES 0.103(2.60) • Collector current I C = 500mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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BC807
500mA
2002/95/EC
IEC61249
OT-23
OT-23,
MIL-STD-750,
BC807-16
BC807-25
BC807-40
7A PNP POWER TRANSISTOR "SOT23"
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sot23 marking tr1
Abstract: MARKING SOT23 tr2 E50U PNP POWER TRANSISTOR SOT23-6L transistor TR1 sot23
Text: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER SOT23-6L 300mW Unit：inch mm FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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150mA
2002/95/EC
IEC61249
300mW
OT23-6L
OT23-6L
MIL-STD-750
sot23 marking tr1
MARKING SOT23 tr2
E50U
PNP POWER TRANSISTOR SOT23-6L
transistor TR1 sot23
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transistor 9682
Abstract: No abstract text available
Text: What mLlÍM HEW LETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/ÜTC 2026 Series Features • Frequency Range: 10 to 2000 MHz • High Output Power: +20.5 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated
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UTC-2026
Abstract: No abstract text available
Text: UTO/UTC 2026 Series Thin-Film Cascadable Amplifier 10 to 2000 MHz 0AVANTEK FEATURES APPLICATIONS • Frequency Range: 10 to 2000 MHz • High Output Power: +19.0 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated • High Reverse Isolation
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Untitled
Abstract: No abstract text available
Text: What IL'tíM HEWLETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features • Frequency Range: 10 to 2000 MHz • High Output Power: +20.5 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated
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esm740
Abstract: ESM 740 CSB 503 TEA 2029 A transistor c 2026 7 pin SMPS ESM thyristor TEA2029A 3 phase smps circuit diagram c 2026 y transistor
Text: YISUSPtlDWlKlIN! electronic TEA 2026 CV «TEA 2029 CV Creative Technologies TIMING PROCESSOR LINE, FRAME, SMPS FOR TV SETS o Technology: I L Bipolar Features: o 500 kHz VCO and appropriate logic avoids adjustment of timing pulses o Low power dissipation by controlling
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28-pin
28-leads
esm740
ESM 740
CSB 503
TEA 2029 A
transistor c 2026
7 pin SMPS
ESM thyristor
TEA2029A
3 phase smps circuit diagram
c 2026 y transistor
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