C 114 TRANSISTOR Search Results

C 114 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

C 114 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IC2500 Abstract: FZ 800 R 12 KF6 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998	Original	PDF
IGBT module FZ 1200 Abstract: FZ 800 R 12 KF6 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 17 KF6 61,5 18 M8 screwing depth max. 16 screwing depth max. 8 130 31,5 114 C C E E E G C 16,5 M4 28 2,5 7 18,5 external connections to be done C C C E E G E 12.06.1998	Original	PDF
MJ 800 Abstract: fz 79 1500 mj800 IGBT module FZ 1200 R 17 KF6 C IGBT 1200A IGBT module FZ 1200 FZ 800 R 12 KF6 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 07.04.1998	Original	PDF
FZ1200R12KF4 Abstract: ic 7800 fz 1200 r12 kf 4 KF 35 transistor IGBT module FZ 1200 fz 1000 r12 kf 4 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 FZ1200R12KF4 FZ1200R12KF4 ic 7800 fz 1200 r12 kf 4 KF 35 transistor IGBT module FZ 1200 fz 1000 r12 kf 4
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
FZ800R12KF4 Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 FZ800R12KF4 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
eupec FZ 800 R 16 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
IGBT FZ 1200 r12 Abstract: FZ800R12KF4 fz 1200 r12 kf 4 1G18 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 IGBT FZ 1200 r12 FZ800R12KF4 fz 1200 r12 kf 4 1G18
6ka transistor Abstract: IGBT 1500 ic 7800 R17KF4 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
IGBT 1500 Abstract: der FZ 1600 R 12 KF4 ic 7800 IGBT module FZ 1200 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
TRANSISTOR TC 100 Abstract: IGBT FZ 800 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
ic 7800 Abstract: 16KF4 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF

Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
FZ800R12KF4 Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 FZ800R12KF4 FZ800R12KF4 IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
IC 7800 Abstract: IGBT FZ 1200 r12 FZ1200R12KF4 fz1200r12 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 IC 7800 IGBT FZ 1200 r12 FZ1200R12KF4 fz1200r12
FZ1200R12KF4 Abstract: IGBT FZ 1200 r12 fz 1000 r12 kf 4 70nH IC 7800 FZ1200R12KF fz 1200 r12 kf 4 eupec FZ 50 A 12 KF Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 FZ1200R12KF4 FZ1200R12KF4 IGBT FZ 1200 r12 fz 1000 r12 kf 4 70nH IC 7800 FZ1200R12KF fz 1200 r12 kf 4 eupec FZ 50 A 12 KF
IGBT FZ 600 R12 Abstract: FZ1200R12KF4 IGBT FZ 1200 r12 Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be	Original	PDF	A15/97 IGBT FZ 600 R12 FZ1200R12KF4 IGBT FZ 1200 r12
IGBT 1500 Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original	PDF
Untitled Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors D T C 114 E E / D T C 114 E U A / D T C 1 14 E K A D T C 114 E C A / D T C 114 E S A •F e a tu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input	OCR Scan	PDF	DTC114EKA DTC114ECA DTC114ESA GG17G45 E/DTC114EUA/DTC114EKA/DTC114ECA/DTC114ESA GD17D4L.
Untitled Abstract: No abstract text available Text: 47 SILICON POWER TRANSISTORS S A T U R A T IO N V O L T A G E S C U R R E N T G A IN <9> T YPE N U M BER CASE T YPE V V C EO C B O V V 1 90 AMP SILICON PNP SDT3623 SDT3920 SDT3921 TO-68 TO-114 TO-114 140 80 100 SDT3922 SDT3923 TO-114 TO-114 120 140 V E BO	OCR Scan	PDF
DTC114TS Abstract: No abstract text available Text: V~P>V DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV / T ransistors D TC 114 T U /D T C 114 T K /D T C 114TS DTC114T F /D T C 114T L /D T C 114TA D TC 114TV h 7 > y ^ ^ ‘i "J •^■/Transistor Switch Digital Transistors Includes Resistors	OCR Scan	PDF	DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV 114TS DTC114T 114TA 114TV DTC114TS
Untitled Abstract: No abstract text available Text: hz7>y'Z$ /'Transistors DTC114TE/DTC114TUA/DTC114TKA D T C 1 14 T E /D T C 114 T U A /D T C 114 T K A Digital Transistors Includes Resistors h ' 7 > y X 5 t Z . ' f ' y ^-/Transistor Switch • • ^}f?^j-^0 /Dimensions (Unit : mm) w ä 1) A - f », A t t W c m ft liim t i: U T O	OCR Scan	PDF	DTC114TE/DTC114TUA/DTC114TKA 100MHz DTC114T

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C 114 TRANSISTOR Search Results

C 114 TRANSISTOR Result Highlights (5)

C 114 TRANSISTOR Datasheets Context Search

IC2500

IGBT module FZ 1200

MJ 800

FZ1200R12KF4

Untitled

Untitled

FZ800R12KF4

eupec FZ 800 R 16

IGBT FZ 1200 r12

6ka transistor

Untitled

IGBT 1500

TRANSISTOR TC 100

ic 7800

Untitled

FZ800R12KF4

IC 7800

FZ1200R12KF4

IGBT FZ 600 R12

IGBT 1500

Untitled

Untitled

DTC114TS

Untitled