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    BZX 650 18 Search Results

    BZX 650 18 Datasheets Context Search

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    bzx 650

    Abstract: BZX2C
    Text: BZX2C. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other voltage tolerances and higher Zener voltages are upon request.


    Original     		PDF 200mA Subsid136 bzx 650 BZX2C

    15 BZX

    Abstract: 13 BZX bzx 180 BZX 2.7 v 18 BZX zener BZX 120 27 bzx zener BZX 180 BZX 24 bZX equivalent
    Text: BZX2C. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other voltage tolerances and higher Zener voltages are upon request.


    Original     		PDF 200mA 15 BZX 13 BZX bzx 180 BZX 2.7 v 18 BZX zener BZX 120 27 bzx zener BZX 180 BZX 24 bZX equivalent

    BZX 650 18

    Abstract: bzx 650 BZX 24 BZX -2V5 bzx 35 BZX2C
    Text: BZX2C. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other voltage tolerances and higher Zener voltages are upon request.


    Original     		PDF 200mA BZX 650 18 bzx 650 BZX 24 BZX -2V5 bzx 35 BZX2C

    934 1706 002

    Abstract: No abstract text available
    Text: DC Sensorgebläse Nur für OEM erhältlich S 2000 Typ 002 Kleinstgebläse für eine aktive Belüftung von Temperatursensoren zur automatischen Temperaturregelung von Kfz-Klimaanlagen. Die aktive Belüftung vermeidet Fehlmessungen durch Wärmeeinstrahlung diverser Wärmequellen. Durch den Einsatz eines elektronisch kommutierten


    Original     		PDF BAS216 934 1706 002

    Untitled

    Abstract: No abstract text available
    Text: DC Sensor Blower Only available for OEM S 2000 Type 002 Small sensor blower for active ventilation of temperature sensors used for climate control in cars. The active ventilation avoids mismeasurements due to irradiation of various heat sources. Significant reduced overall size due to the new motor technique of an external rotor motor on


    Original     		PDF BAS216

    Untitled

    Abstract: No abstract text available
    Text: CY7C1412BV18 CY7C1414BV18 36-Mbit QDR II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1412BV18 – 2M x 18 CY7C1414BV18 – 1M x 36 ■ 250 MHz clock for high bandwidth


    Original     		PDF CY7C1412BV18 CY7C1414BV18 36-Mbit CY7C1412BV18

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 18-Mbit density (2 M x 8, 2 M × 9, 1 M × 18, 512 K × 36)


    Original     		PDF CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11771KV18, CY7C11701KV18 3M Touch Systems

    CY7C1312BV18-167BZC

    Abstract: No abstract text available
    Text: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth


    Original     		PDF CY7C1312BV18 CY7C1314BV18 18-Mbit CY7C1312BV18, CY7C1314BV18 CY7C1312BV18-167BZC

    Untitled

    Abstract: No abstract text available
    Text: CY7C1312CV18 CY7C1314CV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1312CV18 – 1M x 18


    Original     		PDF CY7C1312CV18 CY7C1314CV18 18-Mbit CY7C1312CV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth


    Original     		PDF CY7C1312BV18 CY7C1314BV18 18-Mbit CY7C1312BV18, CY7C1314BV18

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36)


    Original     		PDF CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 3M Touch Systems

    Untitled

    Abstract: No abstract text available
    Text: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input


    Original     		PDF OPA659 SBOS342B 650MHz 78dBc 10MHz OPA659

    Untitled

    Abstract: No abstract text available
    Text: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input


    Original     		PDF OPA659 SBOS342B 650MHz 550V/Â 78dBc 10MHz

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 36-Mbit density (4 M x 8, 4 M × 9, 2 M × 18, 1 M × 36)


    Original     		PDF CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18 36-Mbit CY7C12771KV18, CY7C12701KV18 3M Touch Systems

    Untitled

    Abstract: No abstract text available
    Text: CY7C13101KV18, CY7C13251KV18 CY7C13121KV18, CY7C13141KV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions


    Original     		PDF 18-Mbit CY7C13101KV18, CY7C13251KV18 CY7C13121KV18, CY7C13141KV18 CY7C13101KV18 CY7C13251KV18 CY7C13121KV18

    3M Touch Systems

    Abstract: CY7C1570KV18
    Text: CY7C1566KV18, CY7C1577KV18 CY7C1568KV18, CY7C1570KV18 72-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (8 M x 8, 8 M × 9, 4 M × 18, 2 M × 36)


    Original     		PDF CY7C1566KV18, CY7C1577KV18 CY7C1568KV18, CY7C1570KV18 72-Mbit CY7C1566KV18 CY7C1577KV18 CY7C1568KV18 3M Touch Systems CY7C1570KV18

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C1546KV18, CY7C1557KV18 CY7C1548KV18, CY7C1550KV18 72-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (8 M x 8, 8 M × 9, 4 M × 18, 2 M × 36)


    Original     		PDF CY7C1546KV18, CY7C1557KV18 CY7C1548KV18, CY7C1550KV18 72-Mbit CY7C1546KV18 CY7C1557KV18 CY7C1548KV18 3M Touch Systems

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


    OCR Scan     		PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    BZX2C10V

    Abstract: BZX2C11V BZX2C12V BZX2C13V BZX2C15V BZX2C16V BZX2C18V BZX2C20V BZX2C22V BZX2C24V
    Text: BZX 2C SILICON PLANAR POWER ZENER DIODES Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener


    OCR Scan     		PDF DO-41 BZX2C91V BZX2C100V BZX2C110V BZX2C120V BZX2C130V BZX2C150V BZX2C160V BZX2C180V BZX2C200V BZX2C10V BZX2C11V BZX2C12V BZX2C13V BZX2C15V BZX2C16V BZX2C18V BZX2C20V BZX2C22V BZX2C24V

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


    OCR Scan     		PDF