Diode BYV 95
Abstract: byv 16 BYV 08
Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in
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BYV12,
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV12
BYV13
BYV14
BYV15
BYV16
Diode BYV 95
byv 16
BYV 08
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Untitled
Abstract: No abstract text available
Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage
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BYV26A
BYV26G
DO-15
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Untitled
Abstract: No abstract text available
Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage
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BYV26A
BYV26G
DO-15
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BYV 200
Abstract: BYV 35 C BYV 35 BYV 30 45 byv 26c BYV26A BYV26G BYV 26E byv 45
Text: SIYU R BYV26A . BYV26G Ultra-Fast Recovery Rectifier Reverse Voltage 200 to 1400 V Forward Current 1.0 to 1.05 A DO-15 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed:
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BYV26A
BYV26G
DO-15
BYV 200
BYV 35 C
BYV 35
BYV 30 45
byv 26c
BYV26A
BYV26G
BYV 26E
byv 45
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DO-15
Abstract: No abstract text available
Text: BYV95AGP THRU BYV95CGP SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200 TO 600V CURRENT: 1.5A FEATURE DO-15\DO-204AC High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of
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BYV95AGP
BYV95CGP
DO-15\DO-204AC
MIL-S-19500
C/10sec/0
UL-94
DO-15
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TRANSISTOR 58050
Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION
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L4985
L4985D
TRANSISTOR 58050
3 pin TRANSISTOR 58050
58050 3 pin transistor
58050 transistor
byv 32 diode
BYV 88 800
ByV schottky
L4985
L4985D
SO20
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TRANSISTOR 58050
Abstract: 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor LXF Series REGULATOR IC V17 specifications of 24 volt stepdown transformer LXF CAPACITORS dc-dc stepdown converter 12 to 5v 3a
Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION
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L4985
L4985D
TRANSISTOR 58050
58050
3 pin TRANSISTOR 58050
58050 3 pin transistor
58050 transistor
LXF Series
REGULATOR IC V17
specifications of 24 volt stepdown transformer
LXF CAPACITORS
dc-dc stepdown converter 12 to 5v 3a
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55120 ferrite
Abstract: 58050 3 pin transistor 58050 byv 32 diode L4985 LXF CAPACITORS 12V DC to 24V dC converter schematic diagram 330nF capacitor LXF Series osc coil 85khz
Text: APPLICATION NOTE HIGH EFFICIENCY DOUBLE DC-DC CONVERTER WITH L4985 by : Claudio Adragna The growing use of portable equipments supplied by rechargeable batteries requests the implementation of power supplies able to operate with high efficiency at low voltages, as well as to perform
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L4985
L4985
55120 ferrite
58050 3 pin transistor
58050
byv 32 diode
LXF CAPACITORS
12V DC to 24V dC converter schematic diagram
330nF capacitor
LXF Series
osc coil 85khz
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES SMC Diode Solutions was founded in 1997 to support high reliability customers. Headquartered in Plainview, New York with a fabrication facility in Nanjing, China, SMC designs and manufactures their own products at the highest quality standards.
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TS16949,
ISO14001
ISO9001
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EF25 TRANSFORMER
Abstract: EFD25-10 UC3965D IRF640 applications note Rt 28200 UCC3808 UDG-99076 UCC3808-1 2N2222A UCC1808-X
Text: UCC1808-1/-2 UCC2808-1/-2 UCC3808-1/-2 Low Power Current Mode Push-Pull PWM FEATURES DESCRIPTION • 130µA Typical Starting Current The UCC3808 is a family of BiCMOS push-pull, high-speed, low power, pulse width modulators. The UCC3808 contains all of the control and drive
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UCC1808-1/-2
UCC2808-1/-2
UCC3808-1/-2
UCC3808
200ns
EF25 TRANSFORMER
EFD25-10
UC3965D
IRF640 applications note
Rt 28200
UDG-99076
UCC3808-1
2N2222A
UCC1808-X
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BYV 200v
Abstract: BYV32 BYV32-100 BYV32-150 BYV32-200 BYV32-50 BYVB32 BYVF32 BYV 35 C
Text: BYV32, BYVF32 & BYVB32 Series Dual Ultrafast Rectifiers Reverse Voltage 50 to 200V Forward Current 18A Reverse Recovery Time 25ns ITO-220AB BYVF32 Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54) TO-220AB (BYV32 Series)
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BYV32,
BYVF32
BYVB32
ITO-220AB
BYVF32
O-220AB
BYV32
BYV 200v
BYV32-100
BYV32-150
BYV32-200
BYV32-50
BYV 35 C
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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BYV 200
Abstract: No abstract text available
Text: rZ 7 ^ 7 # S C S -T H O M S O N R a o e œ tiC T œ M o o s B Y V 5 2 P I-5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY SM ALL CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ REDUCED SIZE Insulating voltage 2500 V rms
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52PI-50
BYV 200
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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IN5711
Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100
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CB-26)
1N3595DHD
CB-102)
/10mA
CB-101)
IN5711
4148 GERMANIUM
IN5818
SMALL SIGNAL SCHOTTKY DIODES DO-35
IN270
CB-26
thomson 5ns
BYV 200
in3595
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013IF
Abstract: No abstract text available
Text: S T T ^ 7# S G S -T H O M S O N M iœ & ie T fM iG S B Y V 5 4 V -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • V E R Y S M A L L C O N D U C T IO N LO S S E S . N E G LIG IB LE S W IT C H IN G LO S S E S ■ LO W F O R W A R D A N D R E V E R S E R E C O V E R Y
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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BYV36C
Abstract: BYV36 BYV36A BYV36B BYV36D BYV36E BYV36F BYV36G MSA865
Text: N AMER P H I L I P S / D I S C R E T E bTE D ^ 53^31 D 0 2 7 D 3 7 3MH Philips Semiconductors Preliminary specification Very fa s t so ft-reco very avalanche re ctifier d io d es FEA TU R E S • N o n-sna p-off soft- recovery sw itch ing ch aracteristics
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D027D37
BYV36
BYV36A
BYV36B
BYV36C
BYV36haracteristics
BYV36D
BYV36E
BYV36F
BYV36G
MSA865
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BAT 127
Abstract: A502GE A503GE byv 20 BYV 35 CB-127
Text: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10
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/10mA
/20mA
CB-247
CB-18
BAT 127
A502GE
A503GE
byv 20
BYV 35
CB-127
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BY407A
Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Text: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C
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CB-210)
CB-26)
BYV88-
BY407A
BYV 88 800
BYV88-200
BY406A
Scans-00109689
BY407
BYV88-600
MC44
NS100-MA
CB-210
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esm diodes
Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
Text: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)
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D029pl.
lTamb50Â
D027pl.
esm diodes
181800r
c81 004
cb33
182100
REDRESSEMENT
ESM182-100R
87400
DRT76
C701
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BYS 21-90
Abstract: 3045 PT bys 26-45 SCHOTTKY bys 50 2x165
Text: Schottky rectifier diodes Type Ifavm I fsm VF tA = 2 5 "C 10 ms '[ = lAv'I.I tv| = 25 "C V A A BYS 21-45 45 1.0 BYS 21-90 90 BYS 22-45 Outline RthJC RthJA 1v] ' !rt • V °c /w °c /w °c 50 0.55 - 20 125 1.0 30 0.90 - 30 125 45 1.7 100 0.55 - 8 125 BYS 22-90
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RECTIFIER bys 92-50
Abstract: SCHOTTKY bys 92-50 BYS 21-45 TH 2190 BYV 30 45 BYV 77
Text: Schottky rectifier diodes Type Vrrm VF If a v m If s m tA = 25 °C 10 ms R th J C R th J A tv j m ax Outline ¡ f = Ifavm tv| = 25 °C V A V °CI\N °c/w BYS 21-45 45 1,0 50 0,55 - 20 125 119 BYS 21-90 90 1,0 30 0,90 - 30 125 119 BYS 22-45 45 1,7 100 0,55
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BYV 35
Abstract: 9YV32-50
Text: BYV32-50 THRU BYV32-200 FAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage 50 to 150 Volts - Current - 18.0 Amperes FEATURES TO-22QAB ♦ Dual rectifier construction, positive centertap ♦ Plastic package has Underwriters Laboratory Flammability Classification 9 4 V -0
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BYV32-50
BYV32-200
O-22QAB
BYV 35
9YV32-50
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