BVD55 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
ZVP4424A Abstract: BVD55 Text: I P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE2 ZVP4424A [ 1 -SEPTEMBER94 FEATURES ‘ 240 Vott VD$ R ‘ DS onl=9Q Lowthreshold APPLICATIONS Electronic Hook Switch ABSOLUTE MAXIMUM w RAllNGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT v 0s	Original	PDF	ZVP4424A -SEPTEMBER94 BVD55 ZVP4424A BVD55
IRL540A Abstract: No abstract text available Text: IRL540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H BVdss = 100 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS = 100V	OCR Scan	PDF	IRL540A T0-220 003b32fl 3b32t O-220 00M1N IRL540A
irf 560 Abstract: No abstract text available Text: IRLW/IZ24A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ VDS = 60V	OCR Scan	PDF	IRLW/IZ24A b4142 irf 560
SSF7N80A Abstract: No abstract text available Text: SSF7N80A A d van ced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS = 800V	OCR Scan	PDF	SSF7N80A b4145 003b333 003b33M D03b335 SSF7N80A
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	O220AB BUK453-100A/B BUK453 -100A bb53T31 Joi777
irlm110 Abstract: No abstract text available Text: IRLM110A Advanced Power MOSFET FEATURES b v dss = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 1.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ VDS = 100V	OCR Scan	PDF	IRLM110A OT-223 7Tbm42 0Q3T17G 003b323 irlm110