transistor bux 39
Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
Text: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5
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10/is
transistor bux 39
transistor BUX
BUX51
bux THOMSON
bux c
BUX51N
NPN BUX51
BUX 51
transistor BUX 51
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BUX51
Abstract: transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR
Text: BUX 51 BUX 51 N NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA T R A N S IS T O R N P N S IL IC IU M , M E S A T R IP L E D I F F U S E T E N T A T IV E D A T A N O T I C E P R O V IS O IR E Driver stage fo r high voltage power transistor
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10/is
BUX51
transistor 3005
ET 3005
transistor bux 39
transistor 3005 2
NPN BUX51
transistor BUX 22
bux c
pilote 5mhz
L 3005 TRANSISTOR
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BUX13
Abstract: bux13 ra
Text: rz 7 SGS-THOMSON ^7 # g IL ^ O T « S BUX 13 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUX13 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, intended for high voltage, fast switching applications. TO-3 ABSOLUTE M AXIM UM RATING S
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BUX13
300ns,
bux13 ra
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TRANSISTOR BDX
Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T
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BUV48
BUV47
O-22CIAB
CB-117
BUV37
CB-244
CB-285
TRANSISTOR BDX
TRANSISTOR BDX 285
pnp transistor 1000v
TRANSISTOR BDX 53
transistor BDX 65
transistor BDX 80
bux diode
darlington NPN 1000V isotop
DARLINGTON ESM 749
transistor BU 184
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pnp transistor 1000v
Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A
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BUV48
BUV47
CB-244
CB-285
pnp transistor 1000v
transistor buv 90
bux diode
darlington NPN 1000V transistor
pnp transistor 600V
transistor ESM 30
buv PNP
transistor BU 104
NPN Transistor VCEO 1000V
transistor BUX 48
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BUX11
Abstract: No abstract text available
Text: fZ 7 ^ SCS-THOMSON 7# M O œ m iO T « ! BUX 11 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR D E S C R IP T IO N The BUX11 is a silicon muitiepitaxial NPN transis tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in
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BUX11
BUX11
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UTC 7312
Abstract: BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t
Text: *BUX 11N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E Preferred device D is p o s itif recommandé High speed, high current, high power transistor Transistor de puissance rapide, f o r t couran t 160 V
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CB-19
UTC 7312
BUX 88 S
BUX11
bux THOMSON
BUX 115
BUX11N
TRANSISTOR -R7t
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BUX 837
Abstract: TRANSISTOR BUX52 THOMSON transistor 835 TRANSISTOR BUX52 BUX52 transistor BUX
Text: BUX 52 NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA TRANSISTOR NPN SILIC IU M , MESA TRIPLE DIFFUSE T E N T A T IV E D A T A NOTICE PROVISOIRE Driver stage for high voltage power transistor Etage p ilote p ou r transistor de puissance haute tension
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752 transistor
Abstract: TRANSISTOR C-111 bux THOMSON
Text: *BUX 25 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IFF U S E D TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high voltage,high power transistor Transistor de puissance rapide, hau te tension
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CB-159
752 transistor
TRANSISTOR C-111
bux THOMSON
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C 828 Transistor
Abstract: transistor 828 transistor c 828 B 828 transistor 3ALF 828 transistor BUX50 iC 828 Transistor C3F5A C 828 a Transistor
Text: BUX 50 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance
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BUX54
Abstract: D 843 Transistor
Text: BUX 54 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R N P N S IL IC IU M . M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E D river stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance
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ESM750A
Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Text: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183
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BUX48
CB-19
CB-159
CB-19)
CB-159)
ESM750A
ESM750
esm952a
BUW38
ESM952
BUX40
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CI 13007
Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Text: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
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ST24C02
TS59C11
TS93C46
M9306
M9346
CI 13007
bud48
13005 A
BUX 115
BUD48A
13005 ballast
BUD98I
BUV-481
MJE-13007
BUV 471
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BUV 471
Abstract: BUV 481 BUV-481 CI 13007 BUX 115 MJE-13007 MJE13005A BUV46 MJE13007 BUV-471
Text: F=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MO K IlLI g¥lSήi!l©i POWER BIPOLAR 700 / 1000 V VCBO RANGE •c (A 2 2 4 4 4 4 5 5 5 5 5 5 5 5 6 6 7 8 8 8 9 9 9 9 9 9 9 9 12 12 12 15 15 15 15 15 15 15 15 15 16 16 16 16 24 24 30 32 32 35 vCBO (V)
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BUX84
BUV46
BUV 471
BUV 481
BUV-481
CI 13007
BUX 115
MJE-13007
MJE13005A
MJE13007
BUV-471
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BUD48DI
Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Text: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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D44Q1
D44Q3
D44Q5
BUV27
BUD48DI
BUD48
BUV41
BUX 115
BUV18
BUD 48
BUW38
BUV26
BUV40
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Untitled
Abstract: No abstract text available
Text: THOMSON MIL E T SPATIAUX SSE D • TD2bö7B ODOGHTO ÔTT ■ T H C M ' T ' - j y * f DISCRETE COMPONENTS DESCRIPTION PRODUCT PACKAGE o o ■ti» o .E o “O •*> SÖ <Ö BIPOLAR POWER TRANSISTORS BUT 90 V C E O = 125 V 1C = 5 0 A ■ BUT 91 V C E O (s u s ) = 2 0 0 V
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BUT92A
BUV18
BUV19
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BUD48
Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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D44Q1
D44Q3
D44Q5
BUV27
BUD48
BUD48DI
BUD 48
BUX23
BUV41
BUV40
BUW38
BUW52
bux348
TR MJE 350
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BDX 241
Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide
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T0-220AB
O-220AB
5-40V
BD710
CB-19
BDX 241
BD 35 transistor
3055 transistor
TRANSISTOR BDX
transistor 3055
transistor BUx 49
transistor BD 140
TRANSISTOR BDX 14
transistor 2N 3055
transistor bd 905
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bux c
Abstract: BUX23 BUW38 ESM750A BUV18 ESM750 ESM952A BUV19 BUX13 BUX42
Text: lc sat est valeur du courant collecteur de fonctionnement recommandée. Les temps de commutation fw, tr, ts et t f et la tension de saturation collecteur-émetteur VcfYsafV sont j _ i . '_ j i s^cror/m uaiid //i/d tivm,co a i ç (sat)" rO Cn SUPERSWITCH transistor TO-3 selector guide
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BUW38
BUX48
CB-19
CB-159
CB-19)
bux c
BUX23
BUW38
ESM750A
BUV18
ESM750
ESM952A
BUV19
BUX13
BUX42
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LTLS
Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs
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2N5415
2N5416
CB-19
LTLS
2n2891
2N 3055
BDX 78
BDY71
2n3738
2n3055
2n3053
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tt 2194
Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs
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2N5415
2N5416
tt 2194
LTLS
2n3054
2N2243
aa2n
BUX54
2N2192
2N2195
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transistor BUX
Abstract: BUX10 bux THOMSON 4682 bux 10
Text: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A
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CB-19
transistor BUX
BUX10
bux THOMSON
4682
bux 10
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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