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    BUK9Y19-55B REV. 02 Search Results

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    55B2

    Abstract: MBL798
    Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.


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    BUK9Y19-55B 55B2 MBL798 PDF