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    BUK452 Price and Stock

    Philips Semiconductors BUK45260A

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    Bristol Electronics BUK45260A 50
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    Philips Semiconductors BUK452100A

    POWERMOS TRANSISTOR Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUK452100A 15,950
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    BUK452 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK452-100 Philips Semiconductors Powermos Transistor Original PDF
    BUK452-100A Philips Semiconductors PowerMOS transistor Original PDF
    BUK452-100A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK452-100A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK452-100A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK452-100A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK452-100A Philips Components Datasheet Library 1989 Scan PDF
    BUK452-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK452-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK452-100A/B Philips Semiconductors PowerMOS transistor Original PDF
    BUK452-100B Philips Semiconductors PowerMOS transistor Original PDF
    BUK452-100B Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK452-100B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK452-100B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK452-100B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK452-100B Philips Components Datasheet Library 1989 Scan PDF
    BUK452-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK452-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK452-50A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK452-50A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BUK452 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK442-100

    Abstract: BUK472 BUK472-100A BUK472-100B
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    Original     		PDF BUK452-100A/B OT186A BUK472-100A/B BUK472 -100A -100B BUK442-100 BUK472 BUK472-100A BUK472-100B

    BUK442-60

    Abstract: BUK472 BUK472-60A BUK472-60B
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    Original     		PDF BUK452-60A/B OT186A BUK472-60A/B BUK472 BUK442-60 BUK472 BUK472-60A BUK472-60B

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BUK452-100A

    Abstract: BUK452-100 PHD10N10E
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies SMPS , motor


    Original     		PDF OT428 PHD10N10E BUK452-100A BUK452-100 PHD10N10E

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    BUK452-100A

    Abstract: BUK452-100B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK452-100A/B BUK452 -100A -100B BUK452-100A BUK452-100B

    BUK442

    Abstract: BUK442-100 BUK442-100A BUK442-100B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF OT186 BUK442-100A/B BUK442 -100A -100B BUK442 BUK442-100 BUK442-100A BUK442-100B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^ SSE D 53=131 0 0 2 0 4 3 0 4 BUK452-50A BUK452-50B PowerMOS transistor T-37-IJ GENERAL DESCRIPTION SYMBOL > « O N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK452-50A BUK452-50B T-37-IJ BUK452

    BUK472

    Abstract: BUK472-60A BUK472-60B transistor mj 10010
    Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK472-60A/B BUK452-60A/B -SOT186A BUK472 15urer OT186A; BUK472-60A BUK472-60B transistor mj 10010

    B 647 AC transistor

    Abstract: uav specification transistor 2TH
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK452-60A/B BUK472-60A/B BUK472 T186A B 647 AC transistor uav specification transistor 2TH

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION BUK472'100A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched


    OCR Scan     		PDF BUK452-100A/B BUK472 00A/B -100A -100B -SOT186A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK452-60A/B BUK472-60A/B BUK472 OT186A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T0220AB SYMBOL Id p« T, R d S ON PARAMETER MAX. MAX. BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state


    OCR Scan     		PDF BUK452-100A/B BUK452 -100A -100B T0220AB

    pj 66 diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK452-100A/B BUK472-100A/B BUK472 -100A -100B OT186A pj 66 diode

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK452-100A/B BUK472-100A/B BUK472 -100A -100B PINNING-SOT186A -ID/100

    BUK452-50A

    Abstract: BUK452-50B T0220AB
    Text: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 002D43G BUK452-50A BUK452-50B BUK452 ID/100 T0220AB

    BUK472

    Abstract: BUK472-100A BUK472-100B
    Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK472-100A/B BUK452-100A/B -SOT186A BUK472 -100B BUK472-1OOA/B OT186A; BUK472-100A BUK472-100B

    t100c

    Abstract: BUK452-50A BUK452-50B T0220AB
    Text: N AMER PHILIPS/DISCRETE 2SE D • btS3*131 002D430 4 ■ PowerMOS transistor BUK452-50A BUK452-50B T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 002DM3Ã BUK452-50A BUK452-50B BUK452 t100c BUK452-50B T0220AB

    BUK452-100B

    Abstract: BUK452-100A T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK452-60A/B BUK452 T0220AB