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    BT 333 FP 25 Search Results

    BT 333 FP 25 Datasheets Context Search

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    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    L-23014-01

    Abstract: L24002 mitsubishi cdram
    Text: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh


    Original     		PDF L-21001-0B L-21002-0I x4/x8/x16 L-23014-01 L24002 mitsubishi cdram

    DDR200

    Abstract: DDR266A DDR333 DDR400 DDR400B
    Text: HY5DU56422D L FP HY5DU56822D(L)FP HY5DU561622D(L)FP 256Mb DDR SDRAM HY5DU56422D(L)FP HY5DU56822D(L)FP HY5DU561622D(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU56422D HY5DU56822D HY5DU561622D 256Mb 1HY5DU56422D DDR200 DDR266A DDR333 DDR400 DDR400B

    DDR266A

    Abstract: DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E DDR200
    Text: 256Mb DDR SDRAM HY5DU56822E L FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 256Mb HY5DU56822E HY5DU561622E DDR400B DDR266A DDR266B DDR333 DDR400 DDR200

    DDR200

    Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E
    Text: 256Mb DDR SDRAM HY5DU56822E L FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 256Mb HY5DU56822E HY5DU561622E DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B

    DDR200

    Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E
    Text: 256Mb DDR SDRAM HY5DU56822E L FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 256Mb HY5DU56822E HY5DU561622E 456-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B

    HY5DU561622F

    Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500
    Text: 256Mb DDR SDRAM HY5DU56822F L FP HY5DU561622F(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 256Mb HY5DU56822F HY5DU561622F 456-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500

    HY5DU5616

    Abstract: DDR200 DDR266A DDR333 DDR400 DDR400B
    Text: HY5DU56422D L FP HY5DU56822D(L)FP HY5DU561622D(L)FP 256Mb DDR SDRAM HY5DU56422D(L)FP HY5DU56822D(L)FP HY5DU561622D(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU56422D HY5DU56822D HY5DU561622D 256Mb 1HY5DU56422D HY5DU5616 DDR200 DDR266A DDR333 DDR400 DDR400B

    Untitled

    Abstract: No abstract text available
    Text: 256Mb DDR SDRAM HY5DU561622F L FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2007


    Original     		PDF 256Mb HY5DU561622F 456-bit

    Untitled

    Abstract: No abstract text available
    Text: 256Mb DDR SDRAM HY5DU561622F L FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2007


    Original     		PDF 256Mb HY5DU561622F 456-bit

    Untitled

    Abstract: No abstract text available
    Text: 64Mb Synchronous DRAM Specification P2V64S20DTP P2V64S30DTP P2V64S40DTP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-2517-7768 FAX : 886-2-2517-4575 http: // www.deutron.com.tw 64Mb Synchronous DRAM P2V64S20DTP 4-BANK x 4,194,304-WORD x 4-BIT


    Original     		PDF P2V64S20DTP P2V64S30DTP P2V64S40DTP 304-WORD 152-WORD 576-WORD 16-BIT)

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C

    DDR200

    Abstract: DDR333 DDR400 DDR400B HY5DU121622
    Text: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR200 DDR333 DDR400 DDR400B HY5DU121622

    Untitled

    Abstract: No abstract text available
    Text: HY5DU12422B L FP HY5DU12822B(L)FP HY5DU121622B(L)FP 512Mb DDR SDRAM HY5DU12422B(L)FP HY5DU12822B(L)FP HY5DU121622B(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU12422B HY5DU12822B HY5DU121622B 512Mb 1HY5DU12422B

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR400B

    HY5DU121622

    Abstract: DDR200 DDR333 DDR400 DDR400B
    Text: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR400B HY5DU121622 DDR200 DDR333 DDR400

    HY5DU121622

    Abstract: DDR200 DDR333 DDR400 DDR400B bt 333 fp 25
    Text: HY5DU12422B L FP HY5DU12822B(L)FP HY5DU121622B(L)FP 512Mb DDR SDRAM HY5DU12422B(L)FP HY5DU12822B(L)FP HY5DU121622B(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU12422B HY5DU12822B HY5DU121622B 512Mb 1HY5DU12422B HY5DU121622 DDR200 DDR333 DDR400 DDR400B bt 333 fp 25

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF 512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR400B

    SMBJ8.5CA

    Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
    Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130


    Original     		PDF DO-214AA) SMBJ300A SMBJ300CA SMBJ350 SMBJ350C SMBJ350A SMBJ350CA SMBJ400 SMBJ400C SMBJ400A SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A

    SMBJ8.5CA

    Abstract: EZ 711 253 SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A
    Text: SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD SMBJ5.0 - SMBJ440CA 600W Surface Mount Transient Voltage Suppressors Features z z z z z z Working peak reverse voltage range – 5.0V to 440V. Peak power dissipation 600W @10 x 1000 us Pulse Low profile package. Excellent clamping capability.


    Original     		PDF SMBJ440CA DO-214AA MountiMBJ350C SMBJ400C SMBJ440C SMBJ440A DO-214AA SMBJ8.5CA EZ 711 253 SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A

    PME26605001AA

    Abstract: PMG33302001AA SL32N SL36Z sl32s mmc-1 pentium PMG26602001AA
    Text: Mobile Pentium II Processor Specification Update Release Date: January 25, 1999 Order Number: 243887-007 The Mobile Pentium II processor or the Intel® Pentium II Processor Mobile Module may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current


    Original     		PDF

    BUZ64

    Abstract: transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160
    Text: SIEM EN S SIPMOS Power Transistor BUZ 64 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 64 400 V Ia 11.5 A ^DS on 0.4 Í2 Package 1) O rdering Code TO-204 AA C67078-S1017-A2 Maximum Ratings Parameter Symbol Continuous drain current, 7C = 31 “C


    OCR Scan     		PDF BUZ64 O-204 C67078-S1017-A2 023SbD5 10-2L a23SbDS transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160

    Untitled

    Abstract: No abstract text available
    Text: S D " 5 4 132“ 0 I I m IN SERTIO N DEPTH OF FPC SECT. J - J SC A LE 15:1 ACTUATOR C K T. NO. I MARK 6 .5 5 ( o 7 0 J - =l I - ? ' U / c t t - S ) (WHEN ACTUATOR IS OPENED) h - J (WHEN ACTUATOR IS LOCKED) TTTTTTTTTTTTTTTTTT JT T n T T T T T T T 0.6 3.95


    OCR Scan     		PDF XJ-54

    DAP235U

    Abstract: 2SC4116 model s26 sharp 2SC4116 hyper BAND TV TUNER pin
    Text: quarp rnisiFTriRNTTAT. AND PROPRIETARY Contents No. Contents Records of revision 3.4 MODEL VTST6HZ53 Contents Tuning characteristics 3.4.1 Band edge tuning margin 7 3. 4.2 Local oscillator frequency drift 7 3. 4.3 Local oscillator frequency drift 7 Page 1


    OCR Scan     		PDF VTST6HZ53 Termin687. DAP235U 2SC4116 model s26 sharp 2SC4116 hyper BAND TV TUNER pin