Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BSW68 Search Results

    SF Impression Pixel

    BSW68 Price and Stock

    Central Semiconductor Corp BSW68A PBFREE

    Bipolar Transistors - BJT NPN 150Vcer 500mA 80MHz 35pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BSW68A PBFREE 233
    • 1 $4.85
    • 10 $4.07
    • 100 $3.29
    • 1000 $2.51
    • 10000 $2.36
    Buy Now
    Avnet Americas BSW68A PBFREE Box 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.1913
    • 10000 $3.1913
    Buy Now

    Central Semiconductor Corp BSW68A TIN/LEAD

    Bipolar Transistors - BJT NPN 150Vcer 500mA 80MHz 35pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BSW68A TIN/LEAD
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.74
    • 10000 $2.58
    Get Quote
    Avnet Americas BSW68A TIN/LEAD Box 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.36449
    • 10000 $2.36449
    Buy Now

    Central Semiconductor Corp BSW68A

    Trans GP BJT NPN 150V 500mA 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: BSW68A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BSW68A Box 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Philips E C G Inc BSW68A

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT Europe BSW68A 155
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    BSW68 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSW68 Central Semiconductor NPN Silicon Transistor Original PDF
    BSW68 Philips Semiconductors NPN switching transistors Original PDF
    BSW68 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF
    BSW68 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    BSW68 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BSW68 Mullard Quick Reference Guide 1977/78 Scan PDF
    BSW68 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSW68 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSW68 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSW68 Unknown Transistor Replacements Scan PDF
    BSW68 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSW68 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSW68 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSW68 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BSW68 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSW68 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BSW68 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BSW68 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF
    BSW68 SGS-Thomson SGS-Thomson Transistor Datasheets Scan PDF
    BSW68A Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF

    BSW68 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSW68

    Abstract: No abstract text available
    Text: BSW68 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF BSW68 O205AD) 17-Jul-02 BSW68

    BSW68A

    Abstract: No abstract text available
    Text: BSW68A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)


    Original
    PDF BSW68A O205AD) 17-Jul-02 BSW68A

    BSW68

    Abstract: No abstract text available
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 150.0 V NO. BSW68 Voltage, Collector to Emitter (VCE) 150.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 6.0 V empty empty Collector Current (IC) 2.0 A empty empty A CASE TO-39 5.0 W


    Original
    PDF BSW68 BSW68

    BSW68A

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSW68A NPN switching transistor FEATURES • High current (max. 1 A) PINNING • High voltage (max. 150V). APPLICATIONS PIN » General purpose switching and amplification


    Original
    PDF BSW68A BSW68A

    BSW68A

    Abstract: BSW68A semelab
    Text: BSW68A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)


    Original
    PDF BSW68A O205AD) 1-Aug-02 BSW68A BSW68A semelab

    Untitled

    Abstract: No abstract text available
    Text: BSW68 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF BSW68 O205AD) 19-Jun-02

    BSW68

    Abstract: Transistor BSW68 LE17 transistor 2a 20v 5w
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC


    Original
    PDF BSW68 O-205AD) BSW68 Transistor BSW68 LE17 transistor 2a 20v 5w

    BSW68

    Abstract: No abstract text available
    Text: BSW68 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF BSW68 O205AD) 1-Aug-02 BSW68

    data sheet BSW67A

    Abstract: BSW67A BP317 BSW66A BSW68A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors


    Original
    PDF M3D111 BSW66A; BSW67A; BSW68A MAM317 SCA54 117047/00/02/pp8 data sheet BSW67A BSW67A BP317 BSW66A BSW68A

    BSW68

    Abstract: No abstract text available
    Text: BSW68 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 150V • VCEO = 150V


    Original
    PDF BSW68 O-205AD) BSW68

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC


    Original
    PDF BSW68 O-205AD)

    BSW68

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC


    Original
    PDF BSW68 O-205AD) BSW68

    Untitled

    Abstract: No abstract text available
    Text: BSW68A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)


    Original
    PDF BSW68A O205AD) 19-Jun-02

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan
    PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    Untitled

    Abstract: No abstract text available
    Text: 7421237 0 G 2 Ô 4 CÎ7 b • 'T '3 } > - 0 3 SGS-THOMSON iLdtmnfMOûS S G S- TH OM SON BSW67 BSW68 3QE D HIGH VOLTAGE SWITCH DESCRIPTIO N The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load


    OCR Scan
    PDF BSW67 BSW68 BSW67-BSW68

    BSW68A 1990

    Abstract: bsw68a
    Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


    OCR Scan
    PDF BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a

    BY206

    Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
    Text: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A


    OCR Scan
    PDF BSW66A BSW67A BSW68A 500mA BAV10 BY206 7Z776S1 77655 BSW68A 68A diode BY206 diode 82S2 Silicon Epitaxial Planar Transistor philips k 68a

    BU606

    Abstract: bu606d 2N5415
    Text: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338


    OCR Scan
    PDF BFX34 BSS44 BSW67 BSW68 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 BU606 bu606d 2N5415

    bsw68

    Abstract: bsw67
    Text: SGS-THOMSON EüJÛÏÏIMOigS BSW67 BSW68 HIGH VOLTAGE SWITCH DESCRIPTION The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching applications. ABSO LU TE M AXIM UM RATINGS


    OCR Scan
    PDF BSW67 BSW68 67-BSW BSW67-BSW68 bsw68

    BSW68A

    Abstract: BSW67A BSW66A
    Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


    OCR Scan
    PDF BSW66A; BSW67A; BSW68A MAM317 BSW66A BSW67A BSW68A BSW67A BSW66A

    bsw68a

    Abstract: BSW67A MOTOROLA
    Text: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C


    OCR Scan
    PDF t-3b72S4 BSW67A BSW68A BSW68A BSW67A MOTOROLA

    BSW67

    Abstract: BSW68 LG 631 IC transistor bsw67
    Text: Data Sheet cen tral BSW67 BSW68 Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSW67, BSW68 types are Silicon NPN Epitaxial Planar Transistors designed


    OCR Scan
    PDF BSW67, BSW68 BSW67 BSW68 100mA 500mA BSW67 LG 631 IC transistor bsw67

    BY206

    Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
    Text: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter


    OCR Scan
    PDF BSW66A 711002b DD4237Ã BSW67A BSW68A 711Qa2b Q0M53B5 BY206 k 68a Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A

    BSW66A

    Abstract: bsw67a BSW63A bsw68a
    Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


    OCR Scan
    PDF BSW66A; BSW67A; BSW68A BSW66A BSW67A BSW68e BSW63A bsw68a