BSS78 Search Results

BSS78 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BSS78		Semelab	Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=200 / Ic=250 / Hfe=40-250 / fT(Hz)=50M / Pwr(W)=0.5		Original	PDF
BSS78		Motorola	European Master Selection Guide 1986		Scan	PDF
BSS78		Unknown	Diode, Transistor, Thyristor Datasheets and more		Scan	PDF
BSS78		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BSS78		Unknown	Shortform Transistor Datasheet Guide		Short Form	PDF

BSS78 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products	Original	BSS78 O206AA) 10/30m 19-Jun-02	PDF
BSS78 Abstract: TO206AA Text: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products	Original	BSS78 O206AA) 10/30m 2-Aug-02 BSS78 TO206AA	PDF
BSS78 Abstract: No abstract text available Text: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products	Original	BSS78 O206AA) 10/30m 16-Jul-02 BSS78	PDF
50N240 Abstract: JE9093C LOW-POWER SILICON PNP HSE194 Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30	Original	MPS-A93 BF693 MPSA930 2N6432 PH5415 PN5415 2SB718 BSS74S 50N240 JE9093C LOW-POWER SILICON PNP HSE194	PDF
BF689 Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200	Original	BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36	PDF
BU104 Abstract: BSX21 BU103 8SS44 Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC	OCR Scan	BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103	PDF
2N2222A JANTX Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427 Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con struction. 'c Device Type V(BR) CEO Volts Min mA	OCR Scan	MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA	PDF
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan		PDF
HEP transistors Abstract: motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 MM421 transistors for uhf oscillators BSS72 2n3439 motorola MM6427 Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con struction. 'c Device Type V(BR) CEO Volts Min mA	OCR Scan	MM6427 BSS52 BSS51 BSS50 BSS73 BSS72 BSS71 BC394 2N3439* MM421 HEP transistors motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 transistors for uhf oscillators 2n3439 motorola	PDF
BSS78 Abstract: No abstract text available Text: MOTOROLA SC {XSTRS/R Rating F> L3b72S4 bflE D Symbol Value Unit C o llector-E m itter Voltage v CEO 250 Vdc Collector-Base Voltage VCBO 250 Vdc Em itter-Base Voltage v EBO 6.0 Vdc C o lle ctor C urrent — Continuous 'c 1.0 Ade Total Device D issipation ci T /\ = 25°C	OCR Scan	b3b75SM BSS78 O-205AD)	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
BSW66 Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50 Text: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73	OCR Scan	BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 120typ 2/10m 40min BSS50 BSW66 BU208A BSW67	PDF

bsx27 Abstract: No abstract text available Text: SEMELAB LTD BIBBIA? □□□□□S3 T • S M L B T - ^ 7 . i « A l l . . . . U j. M . J “ 0/ J T- 33-G1 * 'c hF E @ Vce /'C fT Pb 60 200 250 300 200 5 0.5 0.5 0.5 0.5 40min 40-250 40-250 40-250 35-150 2/2 10/30m 10/30m 10/30m 10/30m 70M 50M 50M 50M	OCR Scan	33-G1 40min 10/30m BSS44 BSS71 BSS72 BSS73 bsx27	PDF
APY12 Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP	OCR Scan	Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367	PDF