HC49 MEGATEC
Abstract: c103 TRANSISTOR transistor c317 c102 TRANSISTOR TRANSISTOR C307 C312 diode smd capacitor philips 0805 capacitor 100nf 50v 0805 datasheet c103 TRANSISTOR equivalent 0805B104K500CT
Text: DEMO9RS08KA2 Schematic and Bill of Material DC01098 SW102 RESET SW101 SW0 VDD GND GND GND 470R R108 470R R106 470R Q103 BSS138 Q102 BSS138 Q101 BSS138 www.softecmicro.com HB YELLOW LED2 LD103 RED LED1 LD102 C104 100nF R104 GND GND C103 100nF R103 10K VDD RED
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DEMO9RS08KA2
DC01098
SW102
SW101
BSS138
LD103
LD102
100nF
HC49 MEGATEC
c103 TRANSISTOR
transistor c317
c102 TRANSISTOR
TRANSISTOR C307
C312 diode
smd capacitor philips 0805
capacitor 100nf 50v 0805 datasheet
c103 TRANSISTOR equivalent
0805B104K500CT
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K38 SOT-23
Abstract: BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING DS30144 marking k38 BSS138-7 BSS138-7-F
Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23
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BSS138
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS30144
K38 SOT-23
BSS138* spice model
bss138
TRANSISTOR K38
transistor bss138
bss138 MARKING
marking k38
BSS138-7
BSS138-7-F
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K38 SOT-23
Abstract: BSS138 BSS138* spice model TRANSISTOR K38 94v0 c-05 pcb BSS138-7 BSS138-7-F marking k38 transistor bss138 bss138 k38
Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B C Low Input/Output Leakage G TOP VIEW S Available in Lead Free/RoHS Compliant Version Note 3
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BSS138
J-STD-020C
MIL-STD-202,
OT-23
DS30144
K38 SOT-23
BSS138
BSS138* spice model
TRANSISTOR K38
94v0 c-05 pcb
BSS138-7
BSS138-7-F
marking k38
transistor bss138
bss138 k38
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BSS138* spice model
Abstract: K38 SOT-23 DS30144 K38 sot23 TRANSISTOR K38 bss138 BSS138/BSS138* spice model BSS138-7 MARKING k38 SOT23 BSS1381
Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·
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BSS138
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS30144
BSS138* spice model
K38 SOT-23
K38 sot23
TRANSISTOR K38
bss138
BSS138/BSS138* spice model
BSS138-7
MARKING k38 SOT23
BSS1381
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BSS138* spice model
Abstract: bss138 K38 SOT-23
Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23
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BSS138
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS30144
BSS138* spice model
bss138
K38 SOT-23
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K38 SOT-23
Abstract: BSS138* spice model BSS138 BSS138-7-F bss138 MARKING bss138 k38 DS30144
Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B Low Input/Output Leakage C G TOP VIEW S Lead Free/RoHS Compliant Note 3 D
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BSS138
J-STD-020C
MIL-STD-202,
DS30144
K38 SOT-23
BSS138* spice model
BSS138
BSS138-7-F
bss138 MARKING
bss138 k38
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Untitled
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·
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BSS138
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS30144
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BSS138
Abstract: transistor bss138
Text: May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products
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BSS138
OT-23
BSS138
transistor bss138
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BSS138 TO236
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the
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BSS138
OT-23-3
O-236)
OT-23-3
QW-R502-271
BSS138 TO236
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BSS138
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA
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BSS138
200mA
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS35479
BSS138
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K38 SOT-23
Abstract: equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138
Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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BSS138
AEC-Q101
OT-23
J-STD-020C
MIL-STD-202,
DS30144
K38 SOT-23
equivalent transistor k38
BSS138-7-F
spice models bss138
BSS138* spice model
esis power
TRANSISTOR K38
BSS138
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BSS138
Abstract: Mosfet BSS138 50V
Text: BSS138 50V N-Channel MOSFET GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS ON < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Schematic Diagram
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BSS138
OT-23
OT-23
180mm
550REF
20MAX
BSS138
Mosfet
BSS138 50V
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the
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BSS138
BSS138G-AE2-R
BSS138G-AL3-R
QW-R502-271
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BSS138G
Abstract: BSS138 TO236 BSS138
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves
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BSS138
OT-23-3
O-236)
BSS138G-AE2-R
QW-R502-271
BSS138G
BSS138 TO236
BSS138
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BSS138/J1
Abstract: BSS138 onr 20
Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter
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BSS138
OT-23
BSS138/J1
BSS138
onr 20
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bss138 MARKING
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1
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BSS138
AEC-Q101
J-STD-020
MIL-STD-202,
DS30144
bss138 MARKING
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mosfet low vgs
Abstract: Marking code SS
Text: BSS138 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET Low VGS th VDS 50V RDS(ON) 3.5Ω ID 220mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)
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BSS138
220mA
O-236AB
OT-23)
OT-23
220mA
290mA,
440mA,
mosfet low vgs
Marking code SS
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Untitled
Abstract: No abstract text available
Text: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), [email protected],IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω
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BSS138
100mA
500mA
200mA
2002/95/EC
OT-23
2010-REV
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bss138
Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
Text: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA
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PDF
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BSS138
200mA
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
OT-23
DS35479
bss138
bss138 MARKING
BSS138 SS
all diodes ratings
DMOS FET
marking code SS SOT23
BSS138TA
marking ss
BSS138/BSS100 TO-92
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L55 SOT23
Abstract: bss138 BSS138 50V
Text: BSS138 N-Channel Enhancement Mode Vertical DMOS FET BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling APPLICATIONS
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BSS138
BSS138
XBSS138
OT-23
290mA
300jis.
4432E
L55 SOT23
BSS138 50V
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BSS138
Abstract: bss138 MARKING marking BSs sot23 n-channel IAM3 XBSS138 125C-2 50S1 BSS138 50V
Text: BSS138 N-ChanneI Enhancement Mode Vertical DMOS FET calodfc CORPORATION BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling
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OCR Scan
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PDF
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BSS138
BSS138
OT-23
XBSS138
290mA
300ns.
bss138 MARKING
marking BSs sot23 n-channel
IAM3
125C-2
50S1
BSS138 50V
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BSS138
Abstract: bss138 MARKING BSS138 50V 0.2A
Text: BSS138 N-Channel Enhancement Mode Vertical DMOS FET caioqic CORPORATION BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling
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OCR Scan
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PDF
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BSS138
BSS138
XBSS138
OT-23
300jis.
bss138 MARKING
BSS138 50V 0.2A
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bss138
Abstract: bss138 50
Text: P A IR C H II- D MICDNDUCTQ R May 1995 tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products
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PDF
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BSS138
SS138
bss138 50
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B5G1
Abstract: BSS138
Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products
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BSS138
OT-23
B5G1
BSS138
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