NPD5566
Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Text: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15
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bSQ1130
2N3955
2N3956
2N3958
2N5197
2N5564
2N5565
2N5566
2N5906
2N5908
NPD5566
npd5565
NPD5566 Dual jfets
2N6485
2N3955 NATIONAL SEMICONDUCTOR
NP05564
npds5564
NPD8303
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MMBF4119
Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for
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PN4117
PN4118
PN4119
MMBF4117
MMBF4118
MMBF4119
OT-23
G1A/61C/61E
S01130
MMBF4119
PN4119
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NDT452P
Abstract: No abstract text available
Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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NDT452P
125-c
b501130
NDT452P
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S8302
Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage
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NPDS8301
NPDS8302
NPDS8303
bSQ1130
S8302
S8303
NPDS8303
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BCV27
Abstract: mark ff SC10100
Text: uc tor ‘ BCV27 Discrete POWER & Signal Technologies BCV27 M a rk : F F NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*
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BCV27
bS01130
bSD113D
BCV27
mark ff
SC10100
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IR 444 H
Abstract: f 1405 zs FDLL400 FDLL444 DIODE marking 327 fdh 444 diode
Text: ’ FDH/FDLL 400 / 444 C O L O R 8 A N D M AR K IN G D EV ICE FD LL400 FD LL444 1 ST B A N D 2N D BAWD BRO W N BRO W N V IO L E T GRAY L L-3 4 D O -3 5 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode
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LL-34
DO-35
MMBD1401-1405
FDWFDLL444
FDWFDLL400
FDHVFDLL444
FDH/FDLL400
FDH/FDLL444
IR 444 H
f 1405 zs
FDLL400
FDLL444
DIODE marking 327
fdh 444 diode
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2n5461
Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
Text: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2N5460
2N5461
2N5462
MMBF5460
MMBF5461
2N5462
2N5461 equivalent
Low noise audio amplifier
mmbf5461
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NDT451AN
Abstract: u1130
Text: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,
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NDT451AN
OT-223
bSQ1130
NDT451AN
u1130
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NDS0605
Abstract: No abstract text available
Text: National Semiconductor' April 19 95 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel e nhancem ent m o d e p o w e r field effect tra n sisto rs are produced using N ational's pro p rie ta ry, high cell density, DMOS technology.
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NDS0605
bSD1130
NDS0605
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2N3563
Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
Text: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)
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2N2857
2N347B
2N3600
2N3932
2N3933
2N4259
MPSH34
TIS86
TIS87
MPS6540
2N3563
se5020
MPS6544
MPS-6544
SE5023
MPS6547
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mpsa92 "sot23"
Abstract: mpsa92
Text: MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies National e ? Semiconductor~ MMBTA92 MPSA92 PZTA92 SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings*
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MPSA92
MMBTA92
PZTA92
MPSA92
MMBTA92
OT-23
OT-223
bSQ113D
DD407
mpsa92 "sot23"
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NDH831N
Abstract: No abstract text available
Text: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH831N
125-C
bSD1130
NDH831N
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ic nn 5198 k
Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base
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MPSH11
MMBTH11
b5D1130
ic nn 5198 k
nn 5198 k
Transistor C 5196
fcm 10.7 mhz
transistor s34
ic nn 5198 r
Transistor C 5198
MMBTH11
MPSH11
Q100
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PN3640
Abstract: No abstract text available
Text: u c to r PN3640 MMBT3640 PN3640 / MMBT3640 D iscrete POW ER & S ig n a l Technologies E C TO-92 SOT-23 BE B Mark: 2J PNP Switching Transistor T h is d e v ic e is d es ig n e d fo r v e ry high s p e e d satu ra te sw itching at co lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e
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PN3640
MMBT3640
PN3640
OT-23
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