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    BS108 MOSFET Search Results

    BS108 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    BS108 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


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    PDF BS108 BS108/D

    bs108 mosfet

    Abstract: mosfet to92 high current BS108 BS-108
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


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    PDF BS108 bs108 mosfet mosfet to92 high current BS108 BS-108

    BS108 relay driver

    Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


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    PDF BS108 BS108/D BS108 relay driver BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D

    bs108 mosfet

    Abstract: BS108 relay driver BS108 BS108ZL1
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


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    PDF BS108 r14525 BS108/D bs108 mosfet BS108 relay driver BS108 BS108ZL1

    BS108ZL1G

    Abstract: BS108 PPAP MANUAL bs108 mosfet
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


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    PDF BS108 BS108/D BS108ZL1G BS108 PPAP MANUAL bs108 mosfet

    bs108 mosfet

    Abstract: BS108G BS108ZL1G BS108 BS108ZL1 PPAP MANUAL
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


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    PDF BS108 BS108/D bs108 mosfet BS108G BS108ZL1G BS108 BS108ZL1 PPAP MANUAL

    S1095

    Abstract: NTP13N10
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Through−Hole RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* Max Rating Config. Page No. VN2222LL S 1095 0.35 2N7000 S 26 0.35


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    PDF VN2222LL 2N7000 BS170 BS107 BS108 BS107A VN2410L O-220AB NTP125N02R NTP90N02 S1095 NTP13N10

    PHP18NQ10T

    Abstract: IRF540 MOSFET datasheet PHP18NQ20T PHB27NQ10T PHB23NQ10T IRF540 p-channel MOSFET PHP45 MOSFET IRF540 PHP30NQ15T TO247
    Text: High performance MOSFETs for DC-DC conversion 100 V / 200 V MOSFETs Solutions for power in Communications SMPS Optimized solutions for 100 V Output power W Optimal Philips Semiconductors’ TrenchMOS technology exhibits significantly lower gate charge for a given RDS(on), thus delivering far better


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    PDF PHx18NQ10T PHx23NQ10T MSD791 PHD27NQ10T PHD23NQ10T PHP27NQ10T PHP23NQ10T IRF540 PHP18NQ10T IRF540 MOSFET datasheet PHP18NQ20T PHB27NQ10T PHB23NQ10T IRF540 p-channel MOSFET PHP45 MOSFET IRF540 PHP30NQ15T TO247

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


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    PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    12V to 300V dc dc converter step-up

    Abstract: BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530
    Text: Products Selection Guide www.belling.com.cn Index of Part Number 型号索引 Control & Driver 驱动控制类 Counter, CD/DVD, Relay, Stepped motor, Brushless motor, etc(机电驱动) LCD display driver(液晶显示驱动) Digital Appliances 数字家电类


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    PDF TPA6211 BL6203 TPA6203 BL6204 TPA6204 BL6212 LM4990 BL6217 HDIP18 TDA1517 12V to 300V dc dc converter step-up BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530

    Transistor SMD SOT363 SC70

    Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
    Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved


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    BC547 spice parameters

    Abstract: BCK4201 bc547 spice orega 47283900 BCK4201-304 BS108 spice NCP1337 MC78L05 SPICE circuit ncp*1337 BS108 equivalent
    Text: AND8246/D A 160 W CRT TV Power Supply using NCP1337 Prepared by: Nicolas Cyr ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction A 160 W TV Power Supply Design Valley switching converters, also known as quasi−resonant QR converters, allow designing flyback


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    PDF AND8246/D NCP1337 NCP1337 BC547 spice parameters BCK4201 bc547 spice orega 47283900 BCK4201-304 BS108 spice MC78L05 SPICE circuit ncp*1337 BS108 equivalent

    NTD18N06

    Abstract: BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L
    Text: SGD507/D Rev. 0, Feb-2002 MOS Power Products Selector Guide ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    PDF SGD507/D Feb-2002 r14525 NTD18N06 BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


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    PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100

    BS170V

    Abstract: to-92 mosfet
    Text: Mutt LEAD MOUNTED TRANSISTORS PNP TRAN SISTORS - EUROPEAN TYPES / TO-92 'y Type ^CÉÛ Number œ ;a w Volts EHU = C0B@VC8 r^NS-V-L:':. i :i- • V/mA max.V mA/mA max.nA V/mA max.pF V BC327 45 100-630 1/100 .07 500/50 100 45 100 5/10 typ-12 10 BC327-16 45 100-250


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    PDF typ-12 BC327 BC327-16 BC327-25 BC327-40 BC557A BC557B BC557C BS170V to-92 mosfet

    BS192

    Abstract: 10D3 BS170 v-mos din 41870 BS209
    Text: ARR4955 I T T SEMICONDUCTORS 07 DE I 4hû 4TSS 87 D 0 2 3 2 5 D 7-. VMOS TRANSISTORS 0GDE3SS 2 N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,


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    PDF ARR4955 -TO-92) BS107 BS108 BS109 BS112 BS170 BS192 BS208 BS209 10D3 BS170 v-mos din 41870

    BS212

    Abstract: GG01 BS192
    Text: I T T CORP/ I T T CMPNTS 41E D B 4bfi2bñ4 GG01403 b H I T O 'T '- 'll- 'L 'S VMOS TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,


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    PDF GG01403 BS107 BS108 BS112 BS170 BS189 BS212 GG01 BS192

    BST78

    Abstract: bsn204 bsn254 BSN20 to92 BSD254 sot89 15e
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL VERTICAL D-MOSFETS ratings type number typ. mS typ. (PF) c rs typ. (PF) package (Í2) characteristics t 3> ton2> typ. typ.


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    PDF 15000s BST86 PMBF107 PMBF170 2N7002 BST78 bsn204 bsn254 BSN20 to92 BSD254 sot89 15e

    BS192

    Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
    Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.


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    PDF BS107 BS108 BS112 BS170 BS189 170rox. DO-41 DO-35 BS192 BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE

    8SS138

    Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
    Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T


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    PDF TN0205AD* TN0200T OT-363 OT-23 BSH105 GF6968A GF6968E GF9926 GF4126 8SS138 GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n

    MPSA08

    Abstract: No abstract text available
    Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number VCEO Volts hfE @ ^ ce/Ic V/mA Cqb @ Vcb max pF V Pin Diagram See Page 45 V/mA 4.0 5 10 — 20/10 — — 10 10 Fig. 1 Fig. 3 Fig. 1 20/20 20/10 10/20 8.0 10 5 5 Fig. 1 Fig. 1 Fig. 1 50/5 300 — 5/1


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    PDF Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 PSA08/ITTA06 2N5551 MPSA08

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


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    PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


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    PDF BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR

    TDA7052 application note

    Abstract: 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide TDA7050 PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE
    Text: Objective specification Philips Semiconductors Listening-in and handsfree ICs IC03 OVERVIEW OF LISTENING-IN ICs Supply voltage V Details Type Current Speech Line consumpt. powered part (mA) PD<1> TDA7050 loudspeaker amplifier 1.6 to 6.0 no no 3.2 no TDA7052


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    PDF TDA7050 TDA7052 TEA1083 TEA1083A TEA1083 TEA1085 TEA1085A TEA1097 TDA7052 application note 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE