80nf100
Abstract: 80 nf 100
Text: PN101/MMBT101 NATL SEMICOND DISCRETE HE D g bS0113D T - 27-/3. National Ju t Semiconductor PN101 II U c [] E0 00H7S1 D 5 | MMBT101 TO -236 S O T - 23 TO-9 2 TL/Q/10100-5 TL/G/10100-1 NPN General Purpose Amplifier Electrical Characteristics ta = 2s°c unless otherwise noted
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PN101/MMBT101
bS0113D
00H7S1
PN101
MMBT101
TL/Q/10100-5
TL/G/10100-1
10fiA
100/iA
80nf100
80 nf 100
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NPDS402
Abstract: NPDS403 NPDS404 NPDS406
Text: NPDS402 / NPDS403 1 NPDS404 / NPDS406 Discrete POWER & S ignal Technologies National Semiconductor" NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* TA = 25"C unless otherwise noted
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NPDS402
NPDS403
NPDS404
NPDS406
Vos-10V
bS01130
NPDS406
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NZT6714
Abstract: TN6714A
Text: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
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NZT6714
OT-223
bS0113D
O-226
b501130
NZT6714
TN6714A
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027Q
Abstract: NDS336P
Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS
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NDS336P
--125-C
LSD1130
027Q
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NDS8936
Abstract: No abstract text available
Text: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8936
NDS8936
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NB111
Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding
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bS0113G
NB121
100mA
400mV
to-92
fcj501130
NB021EV
NB211YY
NR001E
NB111
NB211E
LB 122 NPN
U6501
NB212E
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B5G1
Abstract: NDC652P Supersot 6
Text: M arch 1996 National f i Semiconductor" NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • -2.4A, -30V. RDSI0Nl = 0.18 fi @ VGS = -4.5V -10V. >V„ These P-Channel logic level enhancement mode power field effect transistors are produced using
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NDC652P
LS01130
B5G1
NDC652P
Supersot 6
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NDT2955
Abstract: ACAA TRANSISTOR
Text: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This
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NDT2955
125-C
SD113G
0D4014D
NDT2955
ACAA TRANSISTOR
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NDP506A
Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP506A
NDP506B
NDB506A
NDB506B
125-C
bSD113D
0D4D21D
zener diode 4B3
NDB506B
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BAV99
Abstract: BAW56 sot23 baw56 t22 sot23
Text: S e m ic o n d u c t o r BAW56 tß Discrete POW ER & Signal Technologies National BAW56 CONNECTION DIAGRAMS JH A1 HI SOT-23 ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 2 5'C unless otherwise noted
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OT-23
BAW56
BAV99
bS0113D
0040S5S
BAW56
sot23 baw56
t22 sot23
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FDS01201
Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
Text: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16
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FDS01000
O-236
BAV70
BAV74
BAV99
BAW56
FDS01201
FDS04148
FDS01203
FSD01200
FDS01503
FDS01501
1N459 equivalent
FDS01202
1N627
FDS01703
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DG 402 rp
Abstract: No abstract text available
Text: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*
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NPDS402
NPDS403
NPDS404
NPDS406
bS0113D
Q040cJ5b
DG 402 rp
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MPSA06
Abstract: No abstract text available
Text: MPSA06 / MMBTA061 PZTA06 Discrete POWER & Sign al Technologies National Semiconductor “ PZTA06 MMBTA06 MPSA06 SOT-23 SOT-223 Mark: 16 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
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MPSA06
MMBTA06
PZTA06
MPSA06
MMBTA06
OT-23
OT-223
bSD1130
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40khz ultrasonic transmitter
Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating
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SD113G
Volt/800
NB111EH/J
NA01EG/J
NR001E
380mW
NR001E
40khz ultrasonic transmitter
40KHZ ULTRASONIC
NA01
nb111eh
NB021EY
toko k
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40khz ultrasonic transmitter
Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §
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SD113G
800mA
Volt/800
NB111EH/J
NA01EG/J
NR001E
NA01EG/J
380mW
40khz ultrasonic transmitter
40KHZ ULTRASONIC
NB111
NB111EH
"Ultrasonic" "transmitter"
40khz ultrasonic transmitter 12V
k 3555
NA01EX
NB021EY
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A1567
Abstract: NDB7060L NDP7060L transistor b35 A-1567
Text: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDP7060L/NDB7060L
bS0113D
A1567
NDB7060L
NDP7060L
transistor b35
A-1567
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NDT014L
Abstract: MOC3
Text: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDT014L
L5D1130
NDT014L
MOC3
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m073
Abstract: NZT6728 TN6728A b41 sot223
Text: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.
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TN6728A
O-226
NZT6728
OT-223
bS0113D
4D73fl
b501130
M073ci
m073
NZT6728
TN6728A
b41 sot223
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bu 517
Abstract: NDS352P
Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS352P
b50113D
003T74G
bSD113D
bSD113D
317H2
bu 517
NDS352P
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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NDS8839H
bS0113D
NDS8839H
Complementary MOSFET Half Bridge
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NDH8302P
Abstract: No abstract text available
Text: f i National Semiconductor" June 1996 ADVANCE INFORMATION NDH8302P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.
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NDH8302P
0025in7
300ns,
bS0113D
NDH8302P
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NDB7060
Abstract: NDP7060
Text: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.
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NDP7060/
NDB7060
bSD1130
bSD113D
NDP7060
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25CC
Abstract: BAS16 BAV99
Text: BAS16 & Discrete POW ER & Sig n a l Technologies National Semiconductor~ BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol ta- as-cun*«omessenoted Parameter Value Units W|v Working Inverse Voltage
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BAS16
BAV99
b50113D
DQ40541
00MD542
25CC
BAS16
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NDP603al
Abstract: NDB603AL Transistor TO220 814
Text: National f i Semiconductor' January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDP603AL
NDB603AL
0DHG22G
NDB603AL
Transistor TO220 814
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