TY6008
Abstract: TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400
Text: fast switching thyristors < 100 Arms thyristors rapides < 100 Aeff T1H0MS0N-CSF Tamb - 25°C Type •o Vr r m ■ tsm 10 ms V d RNI A 0,8 A r m s / T c a S e = 2 5 ° C BRY BRY BRY BRY 55 55 55 55 S- 30 S- 60 S-100 S-200 0,52 5 A r m s / T ^ a se = 7 5 ° C
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s-100
s-200
wf139b
TY6008
TSM 4005 A
6005 F
6005 FAST SWITCHING THYRISTORS
TY6008FA
BRY 55 200
TY6005F
BTX 25 800
TYF6008A
49400
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BRY 300
Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Text: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are
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QQQ47bR
Q68000-A114-F10
Q68000-A183-F10
Q68000-A184-F10
Q68000-A520-F10
Q68000-A185-F10
50to400H2
126iC
623SbOS
BRY 300
BRY 100
BRY 55 200
BRY 55 A
HS 817
VDR Siemens
BRy55
siemens thyristors
bry65
BRY 21
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BSTB0246
Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
Text: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA
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55-500M
55-600M
55-700M
55-800M
2-800RU
92-1000RM
92-1000RU
16N-400DM
16N-400DU
16N-600DM
BSTB0246
BT100A
BSTC0540
BSTB0226
bt 2328
BTW 600
BT106A
BS9-04A
27-600R
TAG106D
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TRIAC TAG 280 600
Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
Text: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100
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O-220AB
TAG260-100
TAG261-100
TAG265-1
TAG266-1
TAG420-100
TAG425-100
TAG426-100
TAG260-200
TAG261-200
TRIAC TAG 280 600
TAG 6 600
BT100A
27-600R
BSTB0246
TRIAC TAG 626 400
TRIAC TAG 92
TRIAC btw 92
triac TAG
bstb0226
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scr tag 2 200
Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Text: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE
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2N2322
2N2322A
BTX30-
2N2323
2N2323A
BTX30-100
2N2324
2N2324A
TAG611-100
TAG612-100
scr tag 2 200
scr 106d
27-600R
SCR bt 107
SCR BRX 49
BSTB0246
BTX30-200
scr 106B
bt 151 600
scr bt 138
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scr 106d
Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Text: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007
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to-18
2n876
2n884
2n877
2n885
2n3001
2n3005
2nw121
tag520f
tag521f
scr 106d
SCR bt 107
27-600R
C 106D scr
scr tag 12
BS9-04A
tag br 203
BT106A
TAG 92
bstb0226
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bry46
Abstract: thyristors BRY 300 TO64 package BRY 55 A TO-64 BRY 46 bry44 TO-64 weight TO64
Text: Thyristors T h y ris to rs BRY Series in special lo w -lin e tab package for consumer applications. CRS 1 Series in TO -5 case. CRS 3 Series in TO -64 stud-m ounted case » M 5 Type M axim um Ratings C haracteristics at T j= 2 5 °C C ontinuous forw ard
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BRY 300
Abstract: BRY 55 A BRY 55 200 bry 55 2N883 BRY 100 2N877 2N878 TD5001 2N880
Text: sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •o ■RM @ V r r m d m @ Vd r m Vq t Vr r m ■ tsm ■ Tj max 10 ms V DRM A (V) 0,5 A rm s / Tease = 85°C 2N877 2N878 2N879 2N880 2N881 2N882 2N883 0,5 A im s / Tease = 75°C
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2N877
2N878
2N879
2N880
2N881
2N882
2N883
CB-971
ICB-2741
BRY 300
BRY 55 A
BRY 55 200
bry 55
BRY 100
TD5001
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BRY 300
Abstract: 2N thyristor tls 106-6 BRY55 TD6001S 2N877 2N878 2N879 2N880 BRY 55-200
Text: o THOMSON-CSF sensitive gate thyristor selector guide guide de sélection thyristors sensibles 175 sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •RM @ V r r m V r r m ■t s m ■d m @ V d r m V q t Tj max 10 ms ■o
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BRY55.
BRY55M.
tls107.
CB-971
ICB-2741
BRY 300
2N thyristor
tls 106-6
BRY55
TD6001S
2N877
2N878
2N879
2N880
BRY 55-200
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BRY21
Abstract: BRY 21 thyristor igc
Text: BRY21 PN PN-Thyristor P re lim in a ry d a ta BRY21 is an extinguishable PNPN silicon planar thyristor tetrode in a case 5 C 4 DIN 41873 TO -12 . The anode gate (GA) is electrically connected to the case. The thyristor tetrode BRY 21 is particularly designed for use as a switch of medium
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BRY21
BRY21
Q62702-R81
BRY 21
thyristor igc
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SIEMENS THYRISTOR BRY 20
Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Text: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly
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fl23SbaS
Q0047b3Jj
BRY20
Q60217-Y20
100mA
SIEMENS THYRISTOR BRY 20
7809A
SIEMENS thyristor
BRY 300
BRY20
SIEMENS FAST THYRISTOR
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Text: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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O-236
IC 4093 pin configuration
BRY 56 B
IC 4093
MARKING 30 5Y
SO2894
4392
4392 a ic
BCV27
BFR30
BFR31
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IC 4093 pin configuration
Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
Text: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58
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C12SS
BFR30
BFR31
IC 4093 pin configuration
IC 4093
marking 5Y
bry 55 usage
4392
BFR31
BCV27
BFR30
R 25
10K1001
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BRY20
Abstract: Thyristor 40V 120A L-13 Q60217-Y20 BRY 41
Text: BRY20 PN PN-Thyristor The BRY 20 is an extinguishable silicon PNPN planar th yristo r-te tro d e in a case 5 C 4 DIN 41 873 T O -1 2 . The anode gate (G A) is electrically connected to the case. The BRY 20 is particularly suitable fo r use as a medium fast sw itch.
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BRY20
Q60217-Y20
10ltlA_
BRY20
Thyristor 40V 120A
L-13
BRY 41
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BRY 300
Abstract: 12T4S RSM 2322 k 471 a 2322 635 BRY 56 C 10T4S DRT76 TO-46-200 14T4S
Text: CB 10 (CB 76) (CB 7) Low power SCRs — Normal series Thyristors de faible puissance — Séries normales Case Type 'T(rsm ) (A e ff) V r r m -V d r m (V) B oîtier 0,5 and 0,8 Aeff 0,5 et 0,8 A e ff Tease <°C) •t s m (A) Toper <°C) tp 10 ms m iri 'gt
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DRT76
10T4S
12T4S
BRY 300
RSM 2322
k 471 a
2322 635
BRY 56 C
TO-46-200
14T4S
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Untitled
Abstract: No abstract text available
Text: REV.J TITLE: DIMENSIONS ARE IN INCHES M TOLERANCES ARE: ONE PLACE DECIMALS ± . 1 [2 .5 4 ]T H R E E PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± j-JEXJE 2° J OF 2 SEE TABLE 1
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EXISPR0D\AS5EMBLY\050
E130i
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Untitled
Abstract: No abstract text available
Text: DWG NO: TITLE: REV. DIMENSIONS ARE IN INCHES Z j _ TOLERANCES ARE: ONE PLACE DECIMALS ± . 1 [ 2 . 5 4 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± ILXJL. 2° BOARD SPACING
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E130i
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Untitled
Abstract: No abstract text available
Text: REV. 5 OTHERWSE N' AB TITLE: DIMENSIONS ARE IN INCHES j ONE PLACE DECIMALS ± . 1 [ 2 . 5 4 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± 2° J rjspi rsfi issfi rjöfi rs fi iss
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E130i
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Untitled
Abstract: No abstract text available
Text: 5 OTHERWSE N' TITLE: DIMENSIONS ARE IN INCHE5 REV. I V I .0 9 6 ONE PLACE DECIMALS ± .1 [ 2 . 5 4 ] THREE PLACE DECIMALS ± . 0 0 5 [ . 1 3 ] ANGLES TWO PLACE DECIMALS ± . 0 1 [ . 2 5 [ ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± JULJU J & LEAD STYLE -
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Untitled
Abstract: No abstract text available
Text: UNLESS OTHERWISE NOTED REVISION AL DIMENSIONS ARE IN INCHES ANGLES TWO PLACE DECIMALS ± .0 1 [ . 2 5 ] FOUR PLACE DECIMALS ± . 0 0 2 0 [ . 0 5 ] ± JULX 2° BOARD SPACING SURFACE MOUNT MICRO STRIPS BODY LENGTH SPEC -g g H IH S H IH I J [1 . 2 7 ] 1 OF 3
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BLY\050
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B20S
Abstract: 2SK1205
Text: M4Tb2G5 QQ13253 G22 • H I T M 2SK1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. G*le 2. Drain Flange ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 3. Source (Dimensions i, jl 0.6±02 • No Secondary Breakdown
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2SK1205
QQ13253
001323b
K1205----------------------------HITACHI/
B20S
2SK1205
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galvo
Abstract: E12017 EL2017
Text: EL20171EL2017C é t a n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS High Efficiency Precision Servo Controller General Description Features • Low Saturation Voltage • Precision Current Sense Amplifier • Efficient Class D Switch • linear Class B Hack
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EL20171EL2017C
20-Lead
galvo
E12017
EL2017
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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