BR A44
Abstract: No abstract text available
Text: A44 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.2 A Collector-base voltage V (BR)CBO :400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C
|
Original
|
PDF
|
100uS
BR A44
|
BR A44
Abstract: TRANSISTOR A44 To92 transistor
Text: A44 A44 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
|
Original
|
PDF
|
30MHz
BR A44
TRANSISTOR A44
To92 transistor
|
semikron thyristor skt 16
Abstract: No abstract text available
Text: SKT 16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 16 Features
|
Original
|
PDF
|
|
semikron skt 24
Abstract: C4 diode
Text: SKT 24 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 24 Features
|
Original
|
PDF
|
|
NE24483
Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC
|
Original
|
PDF
|
S01543
AF367
AF280S
2N2999
2N2415
2N2416
2SA1245
BFQ24
NE59333
BFQ52
NE24483
NE38883
BFT93R
NE13783,
ATF-10135
BFT92R
BF936
CFX21
to119
|
thyristor 406
Abstract: diode A44
Text: SK 8 GD 126 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 12 8 , -. / 0 $
|
Original
|
PDF
|
|
Gleichrichter
Abstract: module thyristor driver semikron igbt power module
Text: SK 15 GD 126 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 12 8 , -. / 0 $
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: IGLOO Datasheet P ro du c t Br ie f 1 – IGLOO™ Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation
|
Original
|
PDF
|
130-nm,
|
Untitled
Abstract: No abstract text available
Text: ProASIC 3 Datasheet P ro du c t Br ie f 1 – ProASIC®3 Flash Family FPGAs with Optional Soft ARM® Support Features and Benefits • • • • • 30 k to 1 Million System Gates Up to 144 kbits of True Dual-Port SRAM Up to 300 User I/Os Reprogrammable Flash Technology
|
Original
|
PDF
|
130-nm,
64-Bit
A3P030)
128-Bit
A3P030
|
br 8892
Abstract: No abstract text available
Text: IGLOO Datasheet P ro du c t Br ie f 1 – IGLOO™ Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation
|
Original
|
PDF
|
130-nm,
IO44RSB1
IO45RSB1.
121-Pin
AGL060
256-Pin
AGL1000
281-Pin
100-Pin
br 8892
|
BX R435
Abstract: bx r433 74hct05 A53 SMD 75C185 D9PRS CRYSTAL 14.318MHZ 2N7002-SOT23 SMD SOT23 a41 ABB cp50
Text: A B C VCC_CORE D +3.3V E +3.3V +3.3V E13 R15 A17 4 3 BG#0/HAHOLD 3 BR#0/HLOCK# 3 TS#/HADS# 3 XATS#/HBE#3 3 3 3 A0/HBE#5 A1/HBE#6 A2/HBE#7 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 M1 K13 L1
|
Original
|
PDF
|
AP60X3
AP60X2
AP60X1
AP60X0
DRTRY60X#
UltraDMA/33
10/100M-bit
WB553F
CS4236B
ECO77)
BX R435
bx r433
74hct05
A53 SMD
75C185
D9PRS
CRYSTAL 14.318MHZ
2N7002-SOT23
SMD SOT23 a41
ABB cp50
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage
|
Original
|
PDF
|
30MHz
|
IC 555
Abstract: datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR（ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W 2.BASE （Tamb=25℃） Collector current 3. COLLECTOR ICM : 0.2 A Collector-base voltage
|
Original
|
PDF
|
O--92
30MHz
270TYP
050TYP
IC 555
datasheet of ic 555
A44 transistor
datasheet ic 555
IC 571
TRANSISTOR A44
IC 555 DATASHEETS
A44 npn
transistors a44
|
Untitled
Abstract: No abstract text available
Text: A44 Plastic-Encapsulate NPN Features TO-92 High voltage MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous
|
Original
|
PDF
|
30MHz
|
|
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO
|
Original
|
PDF
|
30MHz
|
BR A44
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
PDF
|
OT-89-3L
OT-89-3L
100mA
BR A44
|
Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage
|
Original
|
PDF
|
30MHz
|
A44 npn
Abstract: No abstract text available
Text: A44 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC
|
Original
|
PDF
|
100mA
30MHz
A44 npn
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A44 TRANSISTOR NPN 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value
|
Original
|
PDF
|
100mA
30MHz
|
TRANSISTOR A44
Abstract: BR A44 datasheet of ic 555 IC 555 A44 npn
Text: A44 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES * High voltage * High Reliability 1 2 3 1 2 3 1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol
|
Original
|
PDF
|
01-Jun-2002
270TYP
050TYP
TRANSISTOR A44
BR A44
datasheet of ic 555
IC 555
A44 npn
|
Untitled
Abstract: No abstract text available
Text: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.
|
OCR Scan
|
PDF
|
TP0202T
AN804,
-44505--Rev
|
BR A44
Abstract: No abstract text available
Text: MCC TO-92 P lastic-E n cap su late T ran sisto rs V 1 A 4 4 T R A N S IS T O R N P N FEATURES /-itfsslpation P cm; 0.625W (Tamb=25”C ) Icm: 0.2 A voltage V(BR)C80: 400V H ^ P ^ l p ^ ^aaiofaae. ¡unction temperature range T j.T s tg : ELECTRICAL. -55t; to + 150"C
|
OCR Scan
|
PDF
|
30MHz
BR A44
|
3904
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration
|
OCR Scan
|
PDF
|
Q68000-A4416
OT-23
D1EE537
0235bGS
fi535fc
01EBS3T
3904
|
BDT61
Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.
|
OCR Scan
|
PDF
|
BDT61
BDT61B
711002b
DG43550
BDT60,
711005b
7Z82099
dg43550
BDT60
QGM3221
diagram DARLINGTON
|
