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    Philips Semiconductors BLY92A

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    BLY92 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLY92 Advanced Semiconductor Original PDF
    BLY92 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BLY92 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BLY92 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLY92 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BLY92 Unknown Transistor Replacements Scan PDF
    BLY92 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLY92A Advanced Semiconductor I(c): 1.0A V(cbo): 65V V(ceo): 35V V(ebo): 4V 13W NPN silicon RF power transistor. For 138-175Mz VHF communications Original PDF
    BLY92A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BLY92A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BLY92A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLY92A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BLY92A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BLY92A Unknown Transistor Replacements Scan PDF
    BLY92A Unknown Transistor Replacements Scan PDF
    BLY92A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BLY92A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLY92A Philips Semiconductors V(cbom): 65V V(ceo): 36V V(ebo): 4V 1.5A 32W VHF power transistor Scan PDF
    BLY92A Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
    BLY92A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BLY92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLY92C

    Abstract: BLY92C RF
    Text: BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLY92C is Designed for Class C FM Amplifier Applications up to 250 MHz. PACKAGE STYLE .380" 4L STUD FEATURES: • PG = 11 dB Typical at 175 MHz • High Load VSWR Capability • Omnigold Metalization System


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    PDF BLY92C BLY92C ASI10758 BLY92C RF

    BLY92C

    Abstract: No abstract text available
    Text: BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92C is designed for Class C FM amplifier applications up to 250 MHz. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES: • PG = 11 dB typical at 175 MHz • High VSWR capability • Omnigold Metalization System


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    PDF BLY92C BLY92C 112x45°

    BLY92A

    Abstract: 138175 transistor A 584
    Text: BLY92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92A is an NPN power transistor designed for 138-175 MHz VHF communications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L STUD FEATURES: .112x45°


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    PDF BLY92A BLY92A 112x45° 0W/175 138175 transistor A 584

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLY92C is designed for Class C FM amplifier applications up to 250 MHz. PACKAGE STYLE .380 4L STUD


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    PDF BLY92C BLY92C 112x45" 8-32UN 200mA

    Untitled

    Abstract: No abstract text available
    Text: i, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLY92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLY92A is an NPN power transistor designed for 138-175 MHz VHP communications. It utilizes emitter ballasting to provide high VSWR


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    PDF BLY92A BLY92A 112x45 10dBat10W/175

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


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    PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


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    PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    Untitled

    Abstract: No abstract text available
    Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLY92C

    RF POWER TRANSISTOR NPN vhf

    Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
    Text: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    PDF OT122F PINNING-SOT122F RF POWER TRANSISTOR NPN vhf BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf

    transistor rf cm 1104

    Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
    Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF BLY92A T-33-Ã OT-48/2. transistor rf cm 1104 BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor

    34D SERIES CAPACITOR

    Abstract: BLY92 BLY92C Philips MBB .J275
    Text: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    PDF D0b3b37 BLY92C/01 OT122F1A OT122F M34326 11J1U 34D SERIES CAPACITOR BLY92 BLY92C Philips MBB .J275

    BLY92C

    Abstract: mfc capacitor philips
    Text: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


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    PDF 711iOÃ BLY92C OT-120. 7Z68949 BLY92C mfc capacitor philips

    D2C17

    Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf

    transistor tt 2222

    Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
    Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    PDF BLY92C/01 OT122F PINNING-SOT122F_ MBB012 transistor tt 2222 C7f TRANSISTOR BLY92C BLY92C/01 BLY92

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    PDF bb53T31 D05T740 BLY92C/01 -SOT122F Lb53T31 00ET747

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF BLY92A HF 331 transistor

    d 1047 transistor

    Abstract: BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf
    Text: II DtiE d N AMER P HILIPS/DISCRETE 86D 0 1952* D 7 • oom no s 3 3 4*9 BLY92A * _ A_ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF bly92a OT-48/2. d 1047 transistor BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf

    transistor L6

    Abstract: BLY92C BLY92 PL 431 transistor
    Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLY92C OT-120. 7z68949 transistor L6 BLY92C BLY92 PL 431 transistor

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    SOT123 Package

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES VHF 25 - 175 MHz BIPOLAR TRANSISTORS continued type number load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage


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    PDF 2N3866 2N3553 BFS23A BLV20 BLY91C BLY91C/01 BLV21 BLY92C BLY92C/01 BLW84 SOT123 Package

    BLY93A

    Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
    Text: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30


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    PDF 25175M 175MHz 2N4427 BFQ42 BFQ43 BLW29 OT-120, BLY93A blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    2sd155

    Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    PDF NPN110. BLY88 BLY92 700MI 500MI MT72C BUY43 MHT5901 MHT5902 10On0 2sd155 SN232 BLY92 2SD154 BD109 TIP27 MD17A X51c stc1201