BLF6G22-45; Search Results
BLF6G22-45; Price and Stock
Ampleon BLF6G22-45,112RF MOSFET LDMOS 28V CDFM2 |
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BLF6G22-45,112 | Tray |
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Ampleon BLF6G22-45,135RF MOSFET LDMOS 28V CDFM2 |
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BLF6G22-45,135 | Reel |
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BLF6G22-45,135 | 142 | 6 |
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BLF6G22-45,135 | 142 | 1 |
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Rochester Electronics LLC BLF6G22-45,135RF MOSFET LDMOS 28V CDFM2 |
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BLF6G22-45,135 | Bulk | 6 |
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NXP Semiconductors BLF6G22-45,112 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G22-45,112 | 151 |
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BLF6G22-45,112 | 48 |
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NXP Semiconductors BLF6G2245POWER LDMOS TRANSISTOR RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G2245 | 12 |
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BLF6G22-45; Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BLF6G22-45 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB | Original | |||
BLF6G22-45 |
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power | Original | |||
BLF6G22-45,112 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A | Original | |||
BLF6G22-45,135 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A | Original | |||
BLF6G22-45,112 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack | Original | |||
BLF6G22-45,112 |
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power | Original | |||
BLF6G22-45,135 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Tape reel smd | Original | |||
BLF6G22-45,135 |
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power | Original |