BLF6G20LS-110 Search Results
BLF6G20LS-110 Price and Stock
Ampleon BLF6G20LS-110,112RF MOSFET LDMOS 28V SOT502B |
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BLF6G20LS-110,112 | Tray |
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Rochester Electronics LLC BLF6G20LS-110,112RF PFET, 1-ELEMENT, L BAND, SILI |
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BLF6G20LS-110,112 | Tube | 4 |
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Ampleon BLF6G20LS-110,118RF MOSFET LDMOS 28V SOT502B |
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BLF6G20LS-110,118 | Reel |
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BLF6G20LS-110,118 | 300 | 4 |
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BLF6G20LS-110,118 | 317 | 1 |
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Rochester Electronics LLC BLF6G20LS-110,118RF MOSFET LDMOS 28V SOT502B |
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BLF6G20LS-110,118 | Bulk | 4 |
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NXP Semiconductors BLF6G20LS-110,112Trans RF MOSFET N-CH 65V 29A 3-Pin SOT-502B Blister |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G20LS-110,112 | 60 | 4 |
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BLF6G20LS-110,112 | 150 | 1 |
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BLF6G20LS-110 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BLF6G20LS-110 |
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Power LDMOS transistor | Original | |||
BLF6G20LS-110 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB | Original | |||
BLF6G20LS-110,112 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Blister pack | Original | |||
BLF6G20LS-110,118 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" | Original |