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    BLF6G20 Price and Stock

    Ampleon BLF6G20-45,112

    RF MOSFET LDMOS 28V CDFM2
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    Ampleon BLF6G20-45,135

    RF MOSFET LDMOS 28V CDFM2
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    Ampleon BLF6G20-75,112

    RF MOSFET LDMOS 28V SOT502A
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    Ampleon BLF6G20-110,112

    RF MOSFET LDMOS 28V SOT502A
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    Ampleon BLF6G20S-45,118

    RF MOSFET LDMOS 28V CDFM2
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    Rochester Electronics BLF6G20S-45,118 385 1
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    Find more BLF6G20 price and stock on Findchips.com

    BLF6G20 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G20-110 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20-110 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB Original PDF
    BLF6G20-110,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack Original PDF
    BLF6G20-180P Philips Semiconductors UHF power LDMOS transistor Original PDF
    BLF6G20-180PN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20-180PN,112 NXP Semiconductors Power LDMOS transistor, SOT539A (LDMOST), Blister pack Original PDF
    BLF6G20-180RN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20-180RN,112 NXP Semiconductors Power LDMOS transistor, SOT502A (LDMOST), Blister pack Original PDF
    BLF6G20-230PRN NXP Semiconductors AN10847 - Doherty RF performance using the BLF6G20-230PRN Original PDF
    BLF6G20-230PRN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20-230PRN,112 NXP Semiconductors BLF6G20-230PRN - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G20-230PRN,118 NXP Semiconductors BLF6G20-230PRN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G20-40 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20-40,112 NXP Semiconductors BLF6G20-40 - Power LDMOS transistor, SOT608A Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    BLF6G20-45 NXP Semiconductors UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB Original PDF
    BLF6G20-45 NXP Semiconductors BLF6G20 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLF6G20-45 Philips Semiconductors UHF power LDMOS transistor Original PDF
    BLF6G20-45,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 19.2DB SOT608A Original PDF
    BLF6G20-45,135 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 19.2DB SOT608A Original PDF
    BLF6G20-45,112 NXP Semiconductors UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack Original PDF

    BLF6G20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF6G20-110

    Abstract: BLF6G20LS-110 RF35
    Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35

    BLF6G20-45

    Abstract: Power Semiconductor Applications Philips Semiconductors
    Text: BLF6G20-45 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Objective data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance


    Original     		PDF BLF6G20-45 BLF6G20-45 Power Semiconductor Applications Philips Semiconductors

    1800 ldmos

    Abstract: SOT539A
    Text: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-230PRN BLF6G20-230PRN 1800 ldmos SOT539A

    BLF6G20(S)-45

    Abstract: No abstract text available
    Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-230PRN; BLF6G20S-230PRN BLF6G20-230PRN 20S-230PRN BLF6G20(S)-45

    transistor C3

    Abstract: BLF6G20-45
    Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 — 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-45; BLF6G20S-45 BLF6G20-45 BLF6G20S-45 transistor C3

    GRM32ER7YA106K88L

    Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
    Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station


    Original     		PDF AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E

    BLF6G20-180P

    Abstract: No abstract text available
    Text: BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance


    Original     		PDF BLF6G20-180P BLF6G20-180P

    Untitled

    Abstract: No abstract text available
    Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-230PRN; BLF6G20S-230PRN BLF6G20-230PRN 20S-230PRN

    BLF6G20-110

    Abstract: BLF6G20LS-110 RF35
    Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 — 28 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35

    RF35

    Abstract: No abstract text available
    Text: BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-180RN; BLF6G20LS-180RN BLF6G20-180RN 20LS-180RN RF35

    BLF6G20

    Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752
    Text: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-75; BLF6G20LS-75 ACPR400k ACPR600k BLF6G20-75 BLF6G20LS-75 BLF6G20 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752

    C5750X7R1H106M

    Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751
    Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20LS-75 ACPR400k ACPR600k BLF6G20LS-75 C5750X7R1H106M C3225X7R1H155M RF35 SM270 TRANSISTOR 751

    C5750X7R1H106M

    Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
    Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table

    transistor C3

    Abstract: EC 401 TRANSISTOR
    Text: BLF6G20-40 Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G20-40 BLF6G20-40 transistor C3 EC 401 TRANSISTOR

    capacitor philips

    Abstract: transistor C3
    Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-45; BLF6G20S-45 BLF6G20-45 capacitor philips transistor C3

    C5750X7R1H106M

    Abstract: SM270 BLF6G20-75 C3225X7R1H155M RF35
    Text: BLF6G20-75 Power LDMOS transistor Rev. 01 — 6 March 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G20-75 ACPR400k ACPR600k BLF6G20-75 C5750X7R1H106M SM270 C3225X7R1H155M RF35

    ordering American Technical Ceramics

    Abstract: No abstract text available
    Text: BLF6G20-180PN Power LDMOS transistor Rev. 02 — 21 January 2009 Preliminary data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-180PN BLF6G20-180PN ordering American Technical Ceramics

    ordering American Technical Ceramics

    Abstract: TRANSISTOR BV 32
    Text: BLF6G20-180PN Power LDMOS transistor Rev. 01 — 28 April 2008 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-180PN BLF6G20-180PN ordering American Technical Ceramics TRANSISTOR BV 32

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    BLF4G08LS-160A

    Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
    Text: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"


    Original     		PDF 31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF