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ADLINK Technology Inc NEON-202B-JT2-X Starter Kit, 1.9M, 60fps Cameras & Camera Modules NEON-202B-JT2-X Starter Kit, IP67, NVIDIA Jetson TX2,1.9M color sensor, 60fps, globe shutter, w/all accessory
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NEON-202B-JT2-X Starter Kit, 1.9M, 60fps		2			1 $3521.18 10 $3521.18 100 $3521.18 1000 $3521.18 10000 $3521.18	Buy Now
ADLINK Technology Inc NEON-201B-JT2-X Starter Kit,1.2MP,54fps Cameras & Camera Modules NEON-201B-JT2-X Starter Kit, IP67, NVIDIA Jetson TX2, 1.2M color sensor, 54fps, globe shutter, w/all accessory
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NEON-201B-JT2-X Starter Kit,1.2MP,54fps					1 $3244.53 10 $3244.53 100 $3244.53 1000 $3244.53 10000 $3244.53	Get Quote
ADLINK Technology Inc NEON-204B-JT2-X Starter Kit, 5M, 14fps Cameras & Camera Modules NEON-204B-JT2-X Starter Kit, IP67, NVIDIA Jetson TX2, 5M color sensor, 14fps, rolling shutter, w/all accessory
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NEON-204B-JT2-X Starter Kit, 5M, 14fps					1 $3244.53 10 $3244.53 100 $3244.53 1000 $3244.53 10000 $3244.53	Get Quote
Amphenol Positronic SP2BJTS38F0N9A1 Power to the Board
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SP2BJTS38F0N9A1					1 - 10 - 100 $106.99 1000 $106.99 10000 $106.99	Get Quote
Interstate Connecting Components	SP2BJTS38F0N9A1					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Positronic SP2BJTS38F0N9A1/AA Power to the Board
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SP2BJTS38F0N9A1/AA					1 - 10 - 100 $106.99 1000 $106.99 10000 $106.99	Get Quote
Interstate Connecting Components	SP2BJTS38F0N9A1/AA					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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BJTS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
L6521 Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■	Original	L6520 L6521 L6520TR L6521TR L6521 L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC	PDF
S042P Abstract: NPN pnp MATCHED PAIRS BJT characteristics r14 diode pnp transistor datasheet NPN MATCHED PAIRS LM1496 OPAMP pdf of transistors npn pnp pnp and npn Text: Four-quadrant multiplier R.M.M. Derkx Modern four-quadrant multipliers frequently consist of two matched di erential pairs of npn BJTs. This principle was developed in 1968 by B.Gilbert and is applied in the mixers multipliers S042P of Siemens and the LM1496 of National Semiconductor. A four-quadrant multiplier with	Original	S042P LM1496 CA3096, NPN pnp MATCHED PAIRS BJT characteristics r14 diode pnp transistor datasheet NPN MATCHED PAIRS OPAMP pdf of transistors npn pnp pnp and npn	PDF
IGBT PIN CONFIGURATION Abstract: GN2470 400CA IC SR03x 700V mos GN2470K4-G SR036 SR037 B1130 SR03x Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Optimized for use with the Supertex SR036 and	Original	GN2470 SR036 SR037 O-252 SR036 1N4001 IGBT PIN CONFIGURATION 400CA IC SR03x 700V mos GN2470K4-G B1130 SR03x	PDF
SiC BJT Abstract: transistor 304 Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.	Original	12M6501 SiC BJT transistor 304	PDF
2SD2195 Abstract: is2764 BF 246 Darlington npn BF800 Text: SPICE PARAMETER 2SD2195 * 2SD2195 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD2195 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9	Original	2SD2195 2SD2195 500E3 764E-9 00E-21 0E-15 00E-3 076E-12 835E-12 is2764 BF 246 Darlington npn BF800	PDF
2SB1316 Abstract: Darlington pnp spice Text: SPICE PARAMETER 2SB1316 * 2SB1316 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with a diode and resistors *C B E .SUBCKT 2SB1316 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 3.932 D1 1 3 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9	Original	2SB1316 2SB1316 500E3 764E-9 00E-21 62E-15 00E-3 5E-15 61E-3 Darlington pnp spice	PDF
2SD1867 Abstract: BF800 Text: SPICE PARAMETER 2SD1867 * 2SD1867 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1867 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9	Original	2SD1867 2SD1867 500E3 764E-9 00E-21 0E-15 00E-3 076E-12 835E-12 BF800	PDF
HBFP-0450 Abstract: Agilent MSA-2543 JESD22-A113-B MSA-2543 MSA-2X43 qcpm HBFP-0405 HBFP-0420 HBFP0450 MSA-2743 Text: Agilent MSA-2543 / 2643 / 2743 MMIC Amplifier Reliability Data Sheet Description The Agilent MSA-2x43 is a MMIC amplifier fabricated using the NT25 process. This process has been qualified on-wafer level and in products such as the Agilent HBFP-0405, HBFP-0420, HBFP0450 BJTs and the QCPM-9804	Original	MSA-2543 MSA-2x43 HBFP-0405, HBFP-0420, HBFP0450 QCPM-9804 JESD22-A113-B 5988-5287EN HBFP-0450 Agilent MSA-2543 qcpm HBFP-0405 HBFP-0420 MSA-2743	PDF
l6520 Abstract: L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Preliminary data Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation	Original	L6520 L6521 L6520TR L6521TR l6520 L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver	PDF
IXAN0061 Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and	Original	IXAN0061 AN10273 IXAN0061 Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics	PDF
Drive Base BJT Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576 Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE	Original	AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576	PDF
E112 jfet Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261	Original	LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565	PDF
SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier	PDF
Half BRIDGE driver for bjt Abstract: No abstract text available Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■	Original	L6520 L6521 L6521TR L6520TR Half BRIDGE driver for bjt	PDF

2n7002ltig Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340 Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or	Original	AND8305/D NCP3063 2n7002ltig TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340	PDF
Transistor D 799 Abstract: 2SD5060 D 799 2SC5060 Text: SPICE PARAMETER 2SD5060 * 2SC5060 DARLINGTON NPN BJT model * Date: 2006/12/08 * BJTs with diodes and resistors *C B E .SUBCKT 2SC5060 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.702 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.000E3 R2 4 3 1.000E3 .MODEL Dmodel D	Original	2SD5060 2SC5060 000E3 70E-9 00E-21 00E-15 382E3 00E-3 Transistor D 799 2SD5060 D 799	PDF
Bjt 547 Abstract: 4067 spice model Transistor 547 bjts C 547 C 2SD2143 Darlington npn Text: SPICE PARAMETER 2SD2143 * 2SD2143 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD2143 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D	Original	2SD2143 2SD2143 500E3 79E-9 00E-21 29E-15 00E-3 4E-15 06E-12 Bjt 547 4067 spice model Transistor 547 bjts C 547 C Darlington npn	PDF
2SD1980 Abstract: 3238 bjts BF800 Text: SPICE PARAMETER 2SD1980 * 2SD1980 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1980 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9	Original	2SD1980 2SD1980 500E3 764E-9 00E-21 0E-15 00E-3 076E-12 835E-12 3238 bjts BF800	PDF
4067 spice model Abstract: 2SD1866 Text: SPICE PARAMETER 2SD1866 * 2SD1866 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD1866 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D	Original	2SD1866 2SD1866 500E3 79E-9 00E-21 29E-15 00E-3 4E-15 06E-12 4067 spice model	PDF
Untitled Abstract: No abstract text available Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package	Original	GN2470 GN2470 O-252 DSFP-GN2470 A100208	PDF
BLY93a Abstract: No abstract text available Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR	Original	BLY93A 30Vdc. 175MHzl BLY93a	PDF
3818 Abstract: 322 652 BF-700 2SB1580 Darlington pnp spice tr3502 Text: SPICE PARAMETER 2SB1580 * 2SB1580 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with a diode and resistors *C B E .SUBCKT 2SB1580 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 3.932 D1 1 3 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9	Original	2SB1580 2SB1580 500E3 764E-9 00E-21 62E-15 00E-3 5E-15 61E-3 3818 322 652 BF-700 Darlington pnp spice tr3502	PDF
Bjt 547 Abstract: Transistor 547 npn darlington 2SD2212 BF650 Text: SPICE PARAMETER 2SD2212 * 2SD2212 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD2212 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D	Original	2SD2212 2SD2212 500E3 79E-9 00E-21 29E-15 00E-3 4E-15 06E-12 Bjt 547 Transistor 547 npn darlington BF650	PDF
current fed push pull topology Abstract: EFD25 n87 N87 material Text: MIC3830/3831/3832/3833 Current-Fed PWM Controllers Preliminary Information The three output stages are totem-pole drivers capable of 1A peak current to external power MOSFETs, BJTs, or IGBTs. General Description The MIC3830, MIC3831, MIC3832, and MIC3833 are a	OCR Scan	MIC3830/3831/3832/3833 MIC3830, MIC3831, MIC3832, MIC3833 IC3830/1/2/3 200kHz IRF540 1N968 EFD25, current fed push pull topology EFD25 n87 N87 material	PDF

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BJTS Search Results

BJTS Price and Stock

ADLINK Technology Inc NEON-202B-JT2-X Starter Kit, 1.9M, 60fps

ADLINK Technology Inc NEON-201B-JT2-X Starter Kit,1.2MP,54fps

ADLINK Technology Inc NEON-204B-JT2-X Starter Kit, 5M, 14fps

Amphenol Positronic SP2BJTS38F0N9A1

Amphenol Positronic SP2BJTS38F0N9A1/AA

BJTS Datasheets Context Search

L6521

S042P

IGBT PIN CONFIGURATION

SiC BJT

2SD2195

2SB1316

2SD1867

HBFP-0450

l6520

IXAN0061

Drive Base BJT

E112 jfet

SIT Static Induction Transistor

Half BRIDGE driver for bjt

2n7002ltig

Transistor D 799

Bjt 547

2SD1980

4067 spice model

Untitled

BLY93a

3818

Bjt 547

current fed push pull topology