MG1200FXF1US53
Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
Text: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT
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MG1200FXF1US53
25degC)
MG1200FXF1US53
4500a
Toshiba IGBT 1200A 3300V
YG6260
transistor BA RW
diode ba 124
ba ph 20v diode
ba qu
IGBT GTR IPM
sage power switching 15v 1.2a
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FMC6G15US60
Abstract: FMC7G15US60
Text: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC6G15US60
E209204
21PM-AA
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FMC7G15US60
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FMC6G20US60
Abstract: FMC7G20US60
Text: IGBT FMC6G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC6G20US60
E209204
21PM-AA
FMC6G20US60
FMC7G20US60
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FMC7G10US60
Abstract: No abstract text available
Text: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC7G10US60
E209204
21PM-AA
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Untitled
Abstract: No abstract text available
Text: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC7G10US60
E209204
21PM-AA
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diode code GW 17
Abstract: FMC7G15US60
Text: IGBT FMC7G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC7G15US60
E209204
21PM-AA
diode code GW 17
FMC7G15US60
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FMC6G10US60
Abstract: FMC7G10US60
Text: IGBT FMC6G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC6G10US60
E209204
21PM-AA
FMC6G10US60
FMC7G10US60
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FMC7G20US60
Abstract: square wave UPS inverter
Text: IGBT FMC7G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC7G20US60
E209204
21PM-AA
FMC7G20US60
square wave UPS inverter
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diode code GW 17
Abstract: No abstract text available
Text: IGBT FMC7G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMC7G20US60
E209204
21PM-AA
diode code GW 17
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MHPM7A30A60B
Abstract: H bridge 300v 30a Dimensioning Inverter TI1250 z12g lgbt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM7A30A60BID DATA Hybrid Power Module I= In&grated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter, brake transistor/diode, current sense resistor and temperature sensor
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MHPM7A30A60BID
MHPM7A30A60B
MK145BP,
2PHXS4256L+
MHPM7A30A60B/D
MHPM7A30A60B
H bridge 300v 30a
Dimensioning Inverter
TI1250
z12g
lgbt
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Untitled
Abstract: No abstract text available
Text: SKHI 24 R . Absolute Maximum Ratings Symbol Conditions U6.43*4 U6.-3*4 d.%BLA%'9, 8.A F%AA'H +.'B&1, A)*3¥ 54A%B 9*14&' +.'B¥ M]*1/O E%BA%B A,&K G%),4B E%BA%B &+,)&1, G%),4B M3&`¥O 3&`¥ 9J*BG/*41 -),a%,4GH C.'',GB.) ,3*BB,) +.'B&1, 9,49, &G).99
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BV725
Abstract: BV726 SKIC2001 semikron SKIC SKIC2001A u416 LM78C LM78C05ACM GL11 RESISTOR ARRAY GL11
Text: Values Units 18 V SEMIDRIVER IGBT Driver Circuit SKIC 2001 6 V Preliminary Data VDD5V + 0,3 GND - 0,3 13,5 V V V 50 – 25 . + 85 kHz °C Values Units 15 + 5 % 5+5% 9,99 . 10,01 V V V 3 15 860 mA mA ns Absolute Maximum Ratings Ta = 25 °C Symbol Term
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VDD15V
VDD15V)
\MARKETIN\FRAMEDAT\datbl\Treiber\Skic2001
BV725
BV726
SKIC2001
semikron SKIC
SKIC2001A
u416
LM78C
LM78C05ACM
GL11 RESISTOR ARRAY
GL11
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Untitled
Abstract: No abstract text available
Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0-6 • 5±0.p The Electrodes are Isolated From Case. 7± 0 | 8 , 14±0.3 • 6 IGBTs are Built Into 1 Package.
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MG8Q6ES42
12-FAST-ON-TAH
2-93A3A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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MIG5Q805H
A/1200V
/l600V
961001EAA1
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P channel 600v 30a IGBT
Abstract: No abstract text available
Text: TOSHIBA MIG30J906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG 30J906H , M IG 30J906H A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.
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MIG30J906H/HA
MIG30J906H
MIG30J906HA
0A/600V
0A/800V
2-108E3A
2-108E4A
961001EAA2
P channel 600v 30a IGBT
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T313-1
Abstract: No abstract text available
Text: POWEREX T - 3 1 - 3 1 ID226005 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual IGBTMOD Power Module SO Amperes/600 Volts Description Powerex IGBTMOD™ Modules are
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ID226005
T-31-31
BP107,
Amperes/600
22Max.
T313-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG400Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG400Q1US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : • Low Saturation Voltage tf=0.3/*s Max. @Induetive Load ; . T _ O / ? T T / T V T _ \
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MG400Q1US51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M r, 7 n n n 1 n <;n 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed tf —0.5//S Max. : (Max.) Low Saturation Voltage * v CE(sat) = 4*ov (Max.)
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MG200Q1US41
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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MIG5Q805H
A/1200V
/l600V
961001EA
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05n60
Abstract: G05N60D
Text: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMG05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate
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05N60D/D
05n60
G05N60D
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
0-60V
AN-964D
IRFC9130
irfc130
IRLC034
IRLC024
irfcg20
IRFC9014
IRFC110
IRFC9230
irfc9120
IRFC430
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ic tl494 cn
Abstract: 5v dc power supply with TL494 MIC4451
Text: MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.
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MIC4451/4452
MIC4451
MIC4452
MIC4451/4452
IC4451/4452
ic tl494 cn
5v dc power supply with TL494
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