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    BIPOLAR HAL Search Results

    BIPOLAR HAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR HAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Precision Bipolar Hall-Effect Latch Preliminary Target Specification TLE4946H Version 1.1 Date: 2003/01/15 Page 1 of 9 Preliminary Target Specification High Precision Bipolar Hall-Effect Latch TLE4946H Version 1.1 High Precision Bipolar Hall-Effect Latch


    Original     		PDF TLE4946H

    smd hall

    Abstract: TLE4946H
    Text: High Precision Bipolar Hall-Effect Latch Preliminary Target Specification TLE4946H Version 1.2 Date: 2003/02/21 Page 1 of 9 Preliminary Target Specification High Precision Bipolar Hall-Effect Latch TLE4946H Version 1.2 High Precision Bipolar Hall-Effect Latch


    Original     		PDF TLE4946H smd hall TLE4946H

    ac motor electric vehicle motor controller circuit diagram

    Abstract: No abstract text available
    Text: High Sensitivity Bipolar Latching Digital Hall-Effect Sensor ICs SS360NT/SS360ST/SS460S Datasheet High Sensitivity Bipolar Latching Digital Hall-Effect Sensor ICs The SS360NT/SS360ST/SS460S High Sensitivity Bipolar Latching Digital Hall-Effect Sensor ICs are small, sensitive and


    Original     		PDF SS360NT/SS360ST/SS460S SS360NT/SS360ST/SS460S SS360NT SS360ST SS460S 005947-3-EN ac motor electric vehicle motor controller circuit diagram

    ac motor electric vehicle motor controller circuit diagram

    Abstract: No abstract text available
    Text: High Sensitivity Bipolar Latching Digital Hall-Effect Sensor ICs SS360NT/SS360ST/SS460S Datasheet High Sensitivity Bipolar Latching Digital Hall-Effect Sensor ICs The SS360NT/SS360ST/SS460S High Sensitivity Bipolar Latching Digital Hall-Effect Sensor ICs are small, sensitive and


    Original     		PDF SS360NT/SS360ST/SS460S SS360NT/SS360ST/SS460S SS360NT SS360ST SS460S 005947-2-EN ac motor electric vehicle motor controller circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: A1202 and A1203 Continuous-Time Bipolar Switch Family Description Features and Benefits The Allegro A1202 and A1203 Hall-effect bipolar switches are next-generation replacements and extension of the popular Allegro A3133 and A3132 bipolar switch product line. Overall,


    Original     		PDF A1202 A1203 A1203 A3133 A3132 A120x

    Hall TLE 4905

    Abstract: Allegro 3141 tle4905 LT 4905 allegro 3188 Allegro cross hall 3188 ALLEGRO U PACKAGE 4935
    Text: Cross reference list Hall IC switches Allegro Part No. Allegro 3121 3122 3123 3132 3133 3134 3141 3142 3143 3144 3175 3177 3185 3186 3187 3188 3189 Type Unipolar Unipolar Unipolar Bipolar Bipolar Bipolar Unipolar Unipolar Unipolar Unipolar Latch Latch Latch


    Original     		PDF x3132yzz Hall TLE 4905 Allegro 3141 tle4905 LT 4905 allegro 3188 Allegro cross hall 3188 ALLEGRO U PACKAGE 4935

    A 27631

    Abstract: 27631 hall magnetic bipolar LT HALL SENSOR UGN HALL UGN3132LL MH-014C
    Text: BIPOLAR HALL-EFFECT SWITCHES ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    Original     		PDF

    hall effect sensor 4 pin

    Abstract: HALL ELEMENT Hall IC Switch hall sensor 40 L 0114b hall effect sensor 1816 "battery protection" A 27631 hall effect sensor 4 pin ic hall magnetic bipolar
    Text: 3134 LOW-HYSTERESIS BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION Data Sheet 27631.4* 3134 BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION X This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for


    Original     		PDF

    27705

    Abstract: "Barium Ferrite"
    Text: Product Information Bipolar Switch Hall-Effect IC Basics Introduction There are four general categories of Hall-effect IC devices that provide a digital output: unipolar switches, bipolar switches, omnipolar switches, and latches. Bipolar switches are described in this application note. Similar application


    Original     		PDF 27705-AN 27705 "Barium Ferrite"

    Untitled

    Abstract: No abstract text available
    Text: A1205 Continuous-Time Bipolar Switch Description Features and Benefits The Allegro A1205 Hall-effect bipolar switch is a nextgeneration replacement and extension of the popular Allegro A3134 bipolar switch. The A1205 has identical specifications as the A1201 but is recommended for applications that require


    Original     		PDF A1205 A1205 A3134 A1201 A1204

    Untitled

    Abstract: No abstract text available
    Text: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar


    Original     		PDF A3230 A3230 A3230-DS

    Untitled

    Abstract: No abstract text available
    Text: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar


    Original     		PDF A3230 A3230 A3230-DS

    A3230LUA-T

    Abstract: A3230-DS allegro 3 PIN hall effect sensor Understanding Bipolar Hall-Effect Sensors Allegro Hall-Effect ICs A3230 A3230ELHLT A3230ELHLT-T A3230EUA A3230EUA-T
    Text: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar


    Original     		PDF A3230 A3230 A3230-DS A3230LUA-T A3230-DS allegro 3 PIN hall effect sensor Understanding Bipolar Hall-Effect Sensors Allegro Hall-Effect ICs A3230ELHLT A3230ELHLT-T A3230EUA A3230EUA-T

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    Untitled

    Abstract: No abstract text available
    Text: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC40U MIL-S-1950G T0-254 S54S2

    IRGAC50U

    Abstract: transistor G46 IGBT g48 ge 142 bt 34w
    Text: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF pd926a IRGAC50U 001flb5G IRGAC50U transistor G46 IGBT g48 ge 142 bt 34w

    100-C

    Abstract: IRGMC30F 9714A
    Text: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC30F IRGMC30FD IRGMC30FU mil-s-19500 O-254 100-C IRGMC30F 9714A

    Untitled

    Abstract: No abstract text available
    Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC30U

    IR 92 0151

    Abstract: IRGAC40F IRGAC40 transistor g23
    Text: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC40F IR 92 0151 IRGAC40 transistor g23

    2sc 1740 TRANSISTOR equivalent

    Abstract: 40HFL60 IRGMC40F 480V1
    Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF pd96a IRGMC40F IRGMC40FD IRGMC40FU MIL-S-19500 O-254 2sc 1740 TRANSISTOR equivalent 40HFL60 IRGMC40F 480V1

    ir*c30ud

    Abstract: IRGMC30U
    Text: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC30U IRGMC30UD IRGMC30UU MIL-S-19500 O-254 ir*c30ud IRGMC30U

    til 31a

    Abstract: IRGMC40U
    Text: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC40U IRGMC40UD IRGMC40UU MIL-S-19500 O-254 til 31a IRGMC40U