Untitled
Abstract: No abstract text available
Text: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very
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CA-330-11;
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IC 723 voltage regulator
Abstract: high voltage regulator using ic 723 square wave generator ic low voltage regulator using ic 723 square wave signal generator charge generator voltage regulator IC 723 723 voltage regulator ic IC Generator to 10MHz square Frequency Generator 10MHz negative voltage generate circuit
Text: PRELIMINARY ML2731 PA Bias Controller GENERAL DESCRIPTION FEATURES n Sets PA current and power output using a bias control The ML2731 is a power amplifier PA bias controller with support circuits for a typical radio transceiver. The IC integrates a PA bias controller, a PA DC switch, a crystal
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ML2731
10MHz
40MHz
ML2731,
16-Pin
ML2731CT
ML2731ET
DS2731-01
IC 723 voltage regulator
high voltage regulator using ic 723
square wave generator ic
low voltage regulator using ic 723
square wave signal generator charge generator
voltage regulator IC 723
723 voltage regulator ic
IC Generator to 10MHz square
Frequency Generator 10MHz
negative voltage generate circuit
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low voltage regulator using ic 723
Abstract: high voltage regulator using ic 723 square wave signal generator charge generator OF IC 723 linear regulator
Text: PRELIMINARY ML2731 PA Bias Controller GENERAL DESCRIPTION FEATURES n Sets PA current and power output using a bias control The ML2731 is a power amplifier PA bias controller with support circuits for a typical radio transceiver. The IC integrates a PA bias controller, a PA DC switch, a crystal
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ML2731
ML2731,
ML2712
ML2713,
IEEE802
ML2731CT
ML2731ET
DS2731-01
low voltage regulator using ic 723
high voltage regulator using ic 723
square wave signal generator charge generator
OF IC 723 linear regulator
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jamming
Abstract: No abstract text available
Text: NMA 2500 SERIES DUAL BIAS NOISE MODULES 10 MHZ TO 8.5 GHZ 5V AND 12V BIAS REV6.2006 DESCRIPTION NMA 2500 MODULES MODEL The NMA 2500 Dual Bias Noise Module is a compact high power noise source ideal for appliations in jamming, dithering, built-in test and calibration. The dual bias
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NMA-2510
NMA-2511
NMA-2512
NMA-2513
NMA-2514
NMA-2515
NMA-2516
NMA-2517
10MHz
jamming
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25XX
Abstract: NMA2510 jamming
Text: NMA 2500 SERIES DUAL BIAS NOISE MODULES 10 MHZ TO 8.5 GHZ 5V and 12V Bias REV 6.2008 DESCRIPTION NMA 2500 MODULES MODEL The NMA 2500 Dual Bias Noise Module is a compact high power noise source ideal for appliations in jamming, dithering, built-in test and calibration. The dual bias
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NMA2510
10MHz
25XX
NMA2510
jamming
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NSB13211DW6T1G
Abstract: 419B-02 marking .544 sot363 sot363 N3 marking N3 sot363
Text: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device
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NSB13211DW6T1G
NSB13211DW6T1G
SC-88/SOT-363
NSB13211DW6/D
419B-02
marking .544 sot363
sot363 N3
marking N3 sot363
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Untitled
Abstract: No abstract text available
Text: LMV111 LMV111 Operational Amplifier with Bias NetworkOperational Amplifier with Bias Network Literature Number: SNOS503C LMV111 Operational Amplifier with Bias NetworkOperational Amplifier with Bias Network General Description Features + The LMV111 integrates a rail-to-rail op amp with a V /2 bias
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LMV111
LMV111
SNOS503C
SC70-5
OT23-5.
LMV321,
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Untitled
Abstract: No abstract text available
Text: REFLECTIVE ATTENUATORS REFLECTIVE ATTENUATORS - MH128 & KB8 SERIES Features • Wide dynamic range • Hermetic package Operating characteristics • Bias requirements: Normal bias: Inverse bias: • RF power: CW: CW: 5W 4W - insertion loss: - attenuation:
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MH128
MH128
KB8135
KB8235
KB8935
KB8635
KB8835
KB8335
KB8435
KB8735
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Untitled
Abstract: No abstract text available
Text: LMV111 LMV111 Operational Amplifier with Bias NetworkOperational Amplifier with Bias Network Literature Number: SNOS503C LMV111 Operational Amplifier with Bias NetworkOperational Amplifier with Bias Network General Description Features + The LMV111 integrates a rail-to-rail op amp with a V /2 bias
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LMV111
LMV111
SNOS503C
SC70-5
OT23-5.
LMV321,
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Capacitor Fixed Electrolytic 10uF 100V
Abstract: MAX5026 ELECTROLYTIC CAPACITORS 1uF 25V avalanche photodiode bias Nichicon VX AN895 APP895 MAX3271 MAX3664 MAX5304
Text: Maxim/Dallas > App Notes > FIBER-OPTIC CIRCUITS POWER-SUPPLY CIRCUITS Keywords: APD bias, avalanche photo detector bias, bias supply, digitally programmable, low noise, voltage doubler, fiber optic, PWM, switching supply, DC-DC converter, dc dc converters
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HFAN-03
com/an895
MAX3271:
MAX3664:
MAX5026:
MAX5304:
MAX6102:
AN895,
APP895,
Appnote895,
Capacitor Fixed Electrolytic 10uF 100V
MAX5026
ELECTROLYTIC CAPACITORS 1uF 25V
avalanche photodiode bias
Nichicon VX
AN895
APP895
MAX3271
MAX3664
MAX5304
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Untitled
Abstract: No abstract text available
Text: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device
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NSB13211DW6T1G
NSB13211DW6T1G
SC-88/SOT-363
NSB13211DW6/D
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN5111T1G
70/SOTâ
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LMUN5113T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G Series PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN5111T1G
70/SOTâ
LMUN5113T1G
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MUN5111T1
Abstract: MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G SOt323 marking code 6X
Text: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias
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MUN5111T1
SC-70/SOT-323
MUN5111T1/D
MUN5111T1G
MUN5112T1
MUN5112T1G
MUN5113T1
MUN5113T1G
MUN5113T3
MUN5113T3G
SOt323 marking code 6X
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
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100 6n
Abstract: Device marking 6k mun5113t1 MUN5111T1 MUN5112T1 MUN5113T3 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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MUN5111T1
70/SOT
323tor
MUN5111T1
100 6n
Device marking 6k
mun5113t1
MUN5112T1
MUN5113T3
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN5111T1G
70/SOTâ
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN5111RT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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MUN5111RT1
70/SOT
MUN5111RT1
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APD power supply
Abstract: microcontroller PWM 500khz apd gain control PIN APD OPTICAL DIODE avalanche photodiodes max5026 AN1831 APP1831 MAX5304 MAX6102
Text: Maxim > App Notes > Power-Supply Circuits Keywords: APD bias circuit, APD, avalanche photodiode, low-noise, bias, boost converter, discontinuous mode, digital adjustment, optical communication, fiber-optic receiver Jan 07, 2003 APPLICATION NOTE 1831 Low-Noise APD Bias Circuit
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com/an1831
MAX5026:
MAX5304:
MAX6102:
AN1831,
APP1831,
Appnote1831,
APD power supply
microcontroller PWM 500khz
apd gain control
PIN APD OPTICAL DIODE
avalanche photodiodes
max5026
AN1831
APP1831
MAX5304
MAX6102
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MUN5111T1
Abstract: MUN5111T1G MUN5112T1G MUN5113T1G MUN5113T3G MUN5114T1G MUN5115T1G MUN5116T1G
Text: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias
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MUN5111T1
SC-70/SOT-323
MUN5111T1/D
MUN5111T1G
MUN5112T1G
MUN5113T1G
MUN5113T3G
MUN5114T1G
MUN5115T1G
MUN5116T1G
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marking P33 transistor
Abstract: marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
463C-01
463C-02.
marking P33 transistor
marking P32 transistor
transistor P32 25
marking P34
DTA12
DTA124E
LDTA124EET1
SC-89
100 p34 transistor
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MZB600
Abstract: MZB601 SCHOTTKY mzb 600 MZB608 MicroMetrics MZB602 MZB603 MZB604 MZB605 MZB606
Text: Schottky Diodes: MZB 600 Series Zero Bias Schottky Detector Diodes Description The MicroMetrics MZB 600 series Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the
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MZB600
MZB601
MZB602
MZB603
MZB604
MZB605
MZB606
MZB607
MZB608
MZB609
MZB600
MZB601
SCHOTTKY mzb 600
MZB608
MicroMetrics
MZB602
MZB603
MZB604
MZB605
MZB606
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LMUN5313DW1T1G
Abstract: LMUN5311DW1T1G LMUN5312DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5313DW1T3G
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN53xxDW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LMUN53xxDW1T1G
LMUN53xxDW1T1G
SC-88/SOT-363
LMUN5313DW1T1G
LMUN5311DW1T1G
LMUN5312DW1T1G
LMUN5314DW1T1G
LMUN5315DW1T1G
LMUN5316DW1T1G
LMUN5313DW1T3G
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X9470
Abstract: X9470V24I
Text: Preliminary Information RF Power Amplifier PA Bias Controller X9470 DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP
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X9470
X9470
X9470V24I
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