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    BGA 100 PACKAGE FOOTPRINT Search Results

    BGA 100 PACKAGE FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    BGA 100 PACKAGE FOOTPRINT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WMP100

    Abstract: sim 300 processor gsm modem datasheet sim 300 processor datasheet for gsm modem wavecom WMP100 sim 300 processor gsm modem wavecom wmp50 sim 300 processor gsm modem for project wavecom WMP150 WMP150 sim 300 processor for gsm modem
    Text: Smart wireless. Smart business. Wireless Microprocessor WMP 50/100/500 Smart Devices Creative Software Services Wireless Microprocessor® The Wireless Microprocessor® is a certified processing and radio solution in a BGA package designed for GSM/GPRS cellular communication in the M2M


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    PDF WMP50 WMP100 sim 300 processor gsm modem datasheet sim 300 processor datasheet for gsm modem wavecom WMP100 sim 300 processor gsm modem wavecom wmp50 sim 300 processor gsm modem for project wavecom WMP150 WMP150 sim 300 processor for gsm modem

    Untitled

    Abstract: No abstract text available
    Text: Table of Contents Table of Contents BGA Socketing Systems Designed for use with Ball Grid Array BGA , Land Grid Array (LGA), and Chip Scale Package (CSP) devices in development, test and production applications. Over 900 footprints available online in our searchable BGA Socket Finder database at www.bgasockets.com.


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    PDF CAT16-PREVIEW06

    B4C1

    Abstract: No abstract text available
    Text: Rev 3; 5/06 DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Features 27mm2 ♦ Single-Piece, Reflowable, PBGA Package Footprint ♦ Internal ML Battery and Charger ♦ Unconditionally Write-Protects SRAM when VCC is Out-of-Tolerance ♦ Automatically Switches to Battery Supply when


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    PDF DS2030Y/AB 256kb DS2030 256-ball DS2030 B4C1

    Untitled

    Abstract: No abstract text available
    Text: Rev 3; 5/06 DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM Features 27mm2 ♦ Single-Piece, Reflowable, PBGA Package Footprint ♦ Internal ML Battery and Charger ♦ Unconditionally Write-Protects SRAM when VCC is Out-of-Tolerance ♦ Automatically Switches to Battery Supply when


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    PDF DS2045Y/AB DS2045 256-ball DS2045

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


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    PDF B048K096T24 02/04/10M

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


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    PDF B048K120T20 02/04/10M

    Solder Paste, Indium 5.8

    Abstract: SOT996-2 VSSOP8 MICROPAK XX SOT103 WLCSP stencil design J-STD-020D SOT996 sot1049 XQFN10U
    Text: AN10343 MicroPak soldering information Rev. 2 — 30 December 2010 Application note Document information Info Content Keywords MicroPak, footprint, Ball Grid Array BGA , Wafer-Level Chip Scale Package (WLCSP) Abstract This application note describes evaluation of recommended solder land


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    PDF AN10343 Solder Paste, Indium 5.8 SOT996-2 VSSOP8 MICROPAK XX SOT103 WLCSP stencil design J-STD-020D SOT996 sot1049 XQFN10U

    Untitled

    Abstract: No abstract text available
    Text: AT91SAM ARM-based Embedded MPU SAM9G25 SUMMARY DATASHEET Description Based on the ARM926EJ-S core, the SAM9G25 is an embedded microprocessor unit, running at 400 MHz and featuring connectivity peripherals, a high data bandwidth architecture and a small footprint package option, making it an optimized solution for


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    PDF AT91SAM SAM9G25 ARM926EJ-Sâ SAM9G25 12-bit

    XC2V1000 Pin-out

    Abstract: FG256 FF1152 xc2v1000 XC2V8000 XC2V80 XC2V10000 BF957
    Text: Packaging Pinouts Footprints inSilicon: Compatible Pinouts in Virtex-II Devices Enhance Design Flexibility Advanced Virtex-II architecture allows you to change FPGA densities without changing PCB designs. by Jean-Louis Brelet Product Applications Manager, Xilinx


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    PDF FF896 FF1152 XC2V1000 Pin-out FG256 xc2v1000 XC2V8000 XC2V80 XC2V10000 BF957

    DS2045AB

    Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 W16 PLC
    Text: Rev 1; 11/04 DS2045Y/AB Single-Piece 1M Nonvolatile SRAM Features The DS2045 is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint.


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    PDF DS2045Y/AB DS2045 256-ball The045Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 W16 PLC

    DS2045AB

    Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 rechargeable battery
    Text: Rev 2; 1/05 DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM Features The DS2045 is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint.


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    PDF DS2045Y/AB DS2045 256-ball The45Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 rechargeable battery

    Untitled

    Abstract: No abstract text available
    Text: Rev 2; 1/05 DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM Features The DS2045 is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint.


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    PDF DS2045Y/AB DS2045 256-ball T45Y/AB

    CP56

    Abstract: CS48 DS012 PC44 VQ100 VQ44 XCR3064XL K854
    Text: R DS017 v1.3 December 8, 2000 XCR3064XL 64 Macrocell CPLD 14 Product Specification Features Description • 6.0 ns pin-to-pin logic delays • System frequencies up to 145 MHz • 64 macrocells with 1,600 usable gates • Available in small footprint packages


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    PDF DS017 XCR3064XL 64-macrocell 44-pin 48-ball 56-ball pinsVQ100 100-pin CP56 CS48 DS012 PC44 VQ100 VQ44 K854

    XCR3064XL

    Abstract: CP56 CS48 DS012 TQ100 VQ100 VQ44 H644 cpld table k429d
    Text: R DS017 v1.1 August 30, 2000 XCR3064XL 64 Macrocell CPLD 14 Preliminary Product Specification Features Description • 6.0 ns pin-to-pin logic delays • System frequencies up to 145 MHz • 64 macrocells with 1,500 usable gates • Available in small footprint packages


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    PDF DS017 XCR3064XL 64-macrocell 48-ball 56-ball 44-pin 100-pin VQ100: CP56 CS48 DS012 TQ100 VQ100 VQ44 H644 cpld table k429d

    JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF


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    PDF B048K480T30 P/N27688 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND

    14bcm

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


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    PDF B048K096T24 07/04/10M 14bcm

    DS2045AB

    Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70
    Text: Rev 4; 10/06 DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM Features The DS2045 is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint.


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    PDF DS2045Y/AB DS2045 256-ball DS2045Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70

    smd RO25

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


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    PDF B048K120T20 06/04/10M smd RO25

    B048K120T20

    Abstract: JESD22-A-103A JESD22-A-104B SR-332
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


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    PDF B048K120T20 07/04/10M B048K120T20 JESD22-A-103A JESD22-A-104B SR-332

    Untitled

    Abstract: No abstract text available
    Text: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF


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    PDF B048K480T30 P/N27688 08/04/10M

    transistor marking JB

    Abstract: No abstract text available
    Text: BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


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    PDF B048K096T24 07/04/10M transistor marking JB

    JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND

    Abstract: JESD22-A-108-B B048K120T20
    Text: BCM V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


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    PDF B048K120T20 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND JESD22-A-108-B B048K120T20

    JESD22-B-104-A

    Abstract: J-STD-029 SMD TRANSISTOR MARKING 2.x
    Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


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    PDF B048K096T24 06/04/10M JESD22-B-104-A J-STD-029 SMD TRANSISTOR MARKING 2.x

    footprint jedec MS-026 TQFP

    Abstract: PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas
    Text: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.


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    PDF G46-88 footprint jedec MS-026 TQFP PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas