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    BG 43 TRANSISTOR Search Results

    BG 43 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BG 43 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ltc7510

    Abstract: LTC4447 dual high side MOSFET driver with charge pump pin diagram of MOSFET g1630 list of n channel power mosfet list of P channel power mosfet LTC4444-5 mosfet cross reference p channel mosfet 100v
    Text: LTC4447 High Speed Synchronous N-Channel MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Integrated Schottky Diode 4V to 6.5V VCC Operating Voltage 38V Maximum Input Supply Voltage Adaptive Shoot-Through Protection Rail-to-Rail Output Drivers


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    LTC4447 3000pF LTC4444/LTC4444-5 LTC4446 LTC7510 150kHz 4447f ltc7510 LTC4447 dual high side MOSFET driver with charge pump pin diagram of MOSFET g1630 list of n channel power mosfet list of P channel power mosfet LTC4444-5 mosfet cross reference p channel mosfet 100v PDF

    LTC7510

    Abstract: LTC4443-1 LTC4445 LTC4442-1 LTC4443 LTC4443EDD LTC4443EDD-1 LTC4443IDD LTC4443IDD-1 LTC4443I
    Text: LTC4443/LTC4443-1 High Speed Synchronous N-Channel MOSFET Drivers FEATURES DESCRIPTION • The LTC 4443 is a high frequency gate driver with integrated bootstrap Schottky diode designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology.


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    LTC4443/LTC4443-1 3000pF LTC4442/LTC4442-1 LTC4445/LTC4445-1 LTC7510 150kHz 4443f LTC7510 LTC4443-1 LTC4445 LTC4442-1 LTC4443 LTC4443EDD LTC4443EDD-1 LTC4443IDD LTC4443IDD-1 LTC4443I PDF

    LTC7510

    Abstract: LTC4445 RJK0305 LTC4443-1 bg 43 transistor pin diagram of MOSFET list of n channel power mosfet mosfet cross reference n-channel mosfet triggering p 4443
    Text: LTC4443/LTC4443-1 High Speed Synchronous N-Channel MOSFET Drivers FEATURES DESCRIPTION n The LTC 4443 is a high frequency gate driver with integrated bootstrap Schottky diode designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology.


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    LTC4443/LTC4443-1 3000pF LTC4445/LTC4445-1 LTC4447 LTC7510 150kHz 4443fa LTC7510 LTC4445 RJK0305 LTC4443-1 bg 43 transistor pin diagram of MOSFET list of n channel power mosfet mosfet cross reference n-channel mosfet triggering p 4443 PDF

    BLF861

    Abstract: UT70 rogers 5880 821 ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


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    M3D392 BLF861 OT540A budgetnum/printrun/ed/pp12 BLF861 UT70 rogers 5880 821 ceramic capacitor PDF

    smd TRANSISTOR code marking w2

    Abstract: g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/ Thin-Film AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,


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    QV2000 S-RFTF20M798-C smd TRANSISTOR code marking w2 g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING PDF

    SMD CAPACITORS 107E

    Abstract: CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,


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    QV2000 S-RFMTF17M898-N SMD CAPACITORS 107E CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101 PDF

    submersible motor winding formula

    Abstract: dc motor for 24v braun
    Text: Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 1 Drive technology for AC and DC The engineer’s choice version 2011 Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 2 Innovations for the future The right product for every requirement


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    RA-06/11-4â M1138 D-78112 D-74673 D-84030 submersible motor winding formula dc motor for 24v braun PDF

    transistor 2001 H1

    Abstract: BLF861 2222 730 821 ceramic capacitor BLF861A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Product specification Supersedes data of 2000 Aug 04 2001 Feb 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A FEATURES PINNING - SOT540A • High power gain


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    M3D392 BLF861A OT540A 613524/02/pp16 transistor 2001 H1 BLF861 2222 730 821 ceramic capacitor BLF861A PDF

    4-wire to 2-wire hybrid

    Abstract: digital relay 12v 3a datasheet AN549 AN9607 HC4P5524-9 HC-5524 HC9P5524-5
    Text: HC-5524 TM Data Sheet February 1999 FN2798.6 EIA/ITU 24V PABX SLIC with 25mA Loop Feed Features The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI


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    HC-5524 FN2798 HC-5524 4-wire to 2-wire hybrid digital relay 12v 3a datasheet AN549 AN9607 HC4P5524-9 HC9P5524-5 PDF

    SWITCHING TRANSFORMER ERL 39

    Abstract: GK transistor 72 tip22 HC1-5509A1-5 HC1-5509A1-9 HC3-5509A1-5 HC3-5509A1-9 HC4P5509A1-5 HC4P5509A1-9 HC-5509A1
    Text: S E M I C O N D U C T O R NS EW RN 0 O F D 06 NDE 9A1R3 E M 55 OM REC See HC T O N IG DES HC-5509A1 PRELIMINARY May 1997 SLIC Subscriber Line Interface Circuit Features Description • DI Monolithic High Voltage Process • Compatible with Worldwide PBX and CO Performance


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    HC550 HC-5509A1 HC-550X SWITCHING TRANSFORMER ERL 39 GK transistor 72 tip22 HC1-5509A1-5 HC1-5509A1-9 HC3-5509A1-5 HC3-5509A1-9 HC4P5509A1-5 HC4P5509A1-9 HC-5509A1 PDF

    digital relay 12v 3a datasheet

    Abstract: SWITCHING TRANSFORMER ERL 39 HC1-5509A1-5 HC1-5509A1-9 HC3-5509A1-5 HC3-5509A1-9 HC4P5509A1-5 HC4P5509A1-9 HC-5509A1 HC9P5509A1-5
    Text: Semiconductor NS EW RN 0 O F D 06 NDE 9A1R3 E M 55 OM REC See HC T O N IG DES HC-5509A1 PRELIMINARY May 1997 SLIC Subscriber Line Interface Circuit Features Description • DI Monolithic High Voltage Process • Compatible with Worldwide PBX and CO Performance


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    HC550 HC-5509A1 HC-550X digital relay 12v 3a datasheet SWITCHING TRANSFORMER ERL 39 HC1-5509A1-5 HC1-5509A1-9 HC3-5509A1-5 HC3-5509A1-9 HC4P5509A1-5 HC4P5509A1-9 HC-5509A1 HC9P5509A1-5 PDF

    BLF861

    Abstract: BLF861A UT70 821 ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


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    M3D392 BLF861A OT540A 613524/09/pp13 BLF861 BLF861A UT70 821 ceramic capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D392 BLF861A UHF power LDMOS transistor Product specification Supersedes data of 2000 Aug 04 2001 Feb 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A FEATURES PINNING - SOT540A • High power gain


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    M3D392 BLF861A OT540A 613524/02/pp16 PDF

    SOT540A

    Abstract: 821 ceramic capacitor BLF861 data sheet BLF861
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Product specification Supersedes data of 2000 Feb 18 2000 May 23 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT540A • High power gain


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    M3D392 BLF861 OT540A 613524/09/pp16 SOT540A 821 ceramic capacitor BLF861 data sheet BLF861 PDF

    pin diode gamma detector

    Abstract: BD8150KVT BD8150
    Text: Power Supply IC Series for TFT-LCD Panels 4-channel System Power Supply + Gamma Buffer Amp IC BD8150KVT Description The BD8150KVT is a system power supply IC that offers a 4-channel power supply with 10 gamma correction output channels and VCOM. The DC/DC block can be switched between step-up and step-down and supports both 5V and 12V


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    BD8150KVT BD8150KVT 10channel pin diode gamma detector BD8150 PDF

    PowerMOS transistor TOPFET high side switch

    Abstract: BUK203-50Y
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


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    BUK203-50Y BUK203-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch PDF

    BU 103 A transistor

    Abstract: transistor BG 23 0/transistor BG 23
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


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    BUK200-50Y BU 103 A transistor transistor BG 23 0/transistor BG 23 PDF

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


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    BUK200-50X OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50X PDF

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50Y C6560
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


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    BUK200-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50Y C6560 PDF

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


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    OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan
    BUK200-50X PDF

    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Text: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan
    FMMT-A42 FMMT-A43 FMMT-A92 FMMT-A93. OT-23 FMMT-A43 FMMT-A13 FMMT-A14 FMMT-A42R A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


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    BUK200-50Y BUK200-50Y PDF

    REMA

    Abstract: granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R I E V E R T R I E B R U N D F U N K U N D F E R N S E H E N JUL./AUG. 19 7 6 m SEITE 01-10 inämiy 1R A D io -teievlsion 1 GRANAT 516 Ein Exponat der Leipziger Frühjahrsmesse 1976, das in einer kleinen Menge noch im III. Quartal an den Handel ausgeliefert wird, war die


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    Param24 52/PS REMA granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen PDF