BFQ195
Abstract: BFG197 MCD158 MCD156
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;
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BFG197;
BFG197/X;
BFG197/XR
BFG197
BFG197
OT143
CGY2020G
BFQ195
MCD158
MCD156
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BFQ195
Abstract: MCD160 mcd165 MCD158 BFG197 MSB014 MCD156 DSA00888 3002 TRANSISTOR equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;
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BFG197;
BFG197/X;
BFG197/XR
BFG197
BFG197
OT143
BFQ195
MCD160
mcd165
MCD158
MSB014
MCD156
DSA00888
3002 TRANSISTOR equivalent
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BFG195
Abstract: SOT103 BFQ195 BFG197 BFG198 X3A-BFQ195 320nm
Text: P rodu ct spe cification P h ilip s S em icon du ctors T-31-9 o NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL X3A-BFQ195 SbE D • TllGflSb □□HbDTfl 3 ^ IPHIN M E C H A N IC A L DATA DESCRIPTION C rystal NPN crystal used in BFG195 SOT103 , BFG197
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BFG195
OT103)
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
X3A-BFQ195
URV-3-5-52/733
BFG195
SOT103
BFQ195
BFG197
BFG198
320nm
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X3A-BFQ195
Abstract: BFG195 BFG197 BFG198
Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
00322DÃ
X3A-BFQ195
BFG195
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
URV-3-5-52/733
BFG195
BFG197
BFG198
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Untitled
Abstract: No abstract text available
Text: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
0Q322Dfl
X3A-BFQ195
BFG195
OT103)
BFG197
OT143)
BFG198
OT223)
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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Transistor S 40443
Abstract: No abstract text available
Text: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures
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bbS3T31
0024T37
BFG197;
BFG197/X;
BFG197/XR
BFG197
BFG197
OT143
BFG197/X
Transistor S 40443
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BFQ195
Abstract: BFG197 MCD155 NPN power transistor spice MBC964 MBB266
Text: Philips Semiconductors Product specification BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor FEATURES PINNING • High power gain PIN • Low noise figure DESCRIPTION 4 BFG197 Fig. 1 Code: V5 • Gold metallization ensures excellent reliability.
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BFG197;
BFG197/X;
BFG197/XR
BFG197
OT143
BFG197
BFG197/X
BFG197A/XR
MSB014
OT143.
BFQ195
MCD155
NPN power transistor spice
MBC964
MBB266
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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