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    40673 MOSFET

    Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E


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    PDF BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET

    BF993 siemens

    Abstract: No abstract text available
    Text: T Silicon N Channel MOSFET Tetrode 3 SE D • fl2 3 fc» 3 2 0 - Q Q l b 7 tì S 2 / - ¿ S ' BF 993 Q H S IP SIEMENS/ SPCLi SEMICONDS • • High gain, low distortion For VHF TV and FM mixer and Input stages Type Marking Ordering code for versions In bulk


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    PDF 62702-F899 62702-F1018 200MHZ 100MHz BF993 siemens

    CFY19

    Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200


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    PDF E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-18 CFY19-22 BF995 CFY10 CFY65-14

    BF963

    Abstract: BF544 BF930 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors M axim um Ratings Characteristics T.=25°C NF mW G ps dB dB 40 50 30 30 30 30 30 10 10 200 200 200 200 200 200 200 200 200 29 25


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    PDF BF930 BF993 BF994S BF995 BF996S BF997 BF998 BF1005 BF1012 BF543 BF963 BF544 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5

    CFY19

    Abstract: bf963 CFY19-18 CFY10 CFY76-08 gaasfets bf544 CFY67-08 CFY19-22 BF964S
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Type M axim um Ratings A>s Pt G DS 20 20 20 20 20 12 30 50 30 30 30 30 200 200 200 200 200 200 23 25 25 25 18 20 20 20 30 30 200


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    PDF BF961 BF963 BF964S BF965 BF966S BF988 BF544 BF987 T092D O-92b CFY19 CFY19-18 CFY10 CFY76-08 gaasfets bf544 CFY67-08 CFY19-22

    BB409

    Abstract: BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode
    Text: SIEMENS/ SPCLt SEHXCONJS 7DC S B 8S3t320 0013823 8 m Discrete Semiconductors For High Frequency Applications t - o i- c / O Siemens is a major supplier of high frequency discrete semiconductors. An extensive line of tuner and band switch diodes, RF, Microwave and Dual


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    PDF 8S3t320 /200CM 8-121A BB409 BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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