BF908 |
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NXP Semiconductors
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BF908 - Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
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BF908 |
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Philips Semiconductors
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Dual-Gate MOS-FET |
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BF908 |
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Philips Semiconductors
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Dual-Gate MOS-FET |
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PDF
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BF908 |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
PDF
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BF908 |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
PDF
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BF908 |
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
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Short Form |
PDF
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BF908,215 |
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NXP Semiconductors
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Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
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BF908R |
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NXP Semiconductors
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Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
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PDF
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BF908-R |
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NXP Semiconductors
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Dual-gate MOS-FETs |
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PDF
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BF908R |
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Philips Semiconductors
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Dual-Gate MOS-FET |
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Original |
PDF
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BF908R |
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Philips Semiconductors
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Dual-Gate MOS-FET |
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Original |
PDF
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BF908R |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
PDF
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BF908R |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
PDF
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BF908R |
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
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Short Form |
PDF
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BF908R,215 |
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NXP Semiconductors
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Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
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BF908R,235 |
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NXP Semiconductors
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Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
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BF908T/R |
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NXP Semiconductors
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Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
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BF908TR |
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Philips Semiconductors
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Dual-gate MOS-FET |
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BF908T/R |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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Historical |
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BF908WR |
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NXP Semiconductors
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BF908WR - N-channel dual-gate MOS-FET - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
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