Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified
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BF240
BF241
C-120
41Rev110302D
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BF241 TRANSISTOR
Abstract: bf241 Bf240 BF241 npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified
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BF240
BF241
C-120
41Rev110302D
BF241 TRANSISTOR
bf241
Bf240
BF241 npn
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bf241
Abstract: BF241 npn BF240 BF241 TRANSISTOR bF240 transistor
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified
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QSC/L-000019
BF240
BF241
C-120
41Rev110302D
bf241
BF241 npn
BF240
BF241 TRANSISTOR
bF240 transistor
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transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
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Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
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BF241
Abstract: BF240 BF241 npn BF241 TO92 3V02 BF240 BF241
Text: BF240, BF241 NPN Silicon Epitaxial Planar Transistors designed for emitter-grounded AM and FM amplifier stages 2,5 m a x .Q S # 1,25 Plastic case ~ JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Absolute Maximum Ratings
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BF240,
BF241
BF241
BF240
BF241 npn
BF241 TO92
3V02
BF240 BF241
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BFT98
Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Text: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74
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BF199
BF240
BF241
BF254
BF255
BF414
BF450
BF451
BF506
BF606A
BFT98
transistors bfs17p
BFQ71
BFS55A
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BFQ58
Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S
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6535b05
00M5Mgfl
BF199
O-92d
BF599
BF240
BF840
BF241
BFQ58
BFQ57
BFT99
RF Bipolar Transistors
BFT97
BFP194
BF840
BFT65
BFR34A
BF450
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b^E D 0057b72 T34 • APX BF240 BF241 b b S B 'I B l Jl HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM/FM receivers. QUICK REFERENCE DATA Collector-base voltage open emitter
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0057b72
BF240
BF241
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bf241
Abstract: BF240 BF241 TO92 cbf240 BF240 philips
Text: N AUER PHILIPS/DISCRETE b^E D • ^53^31 □ □S 7ti72 Jl =134 ■ I APX BF240 BF241 HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM /FM receivers. QUICK REFERENCE DATA Col lector-base voltage {open emitter
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S7ti72
BF240
BF241
DATA65
bf241
BF241 TO92
cbf240
BF240 philips
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BF241
Abstract: BF240 G21e 8F240 BF241 TO92 g11e CE040
Text: MO TO RO LA SC XSTRS/R F 12E D | L3ti7E54 Q D ñ S T n 5 | - T - 3 I - W BF240 BF241 C A SE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M R A T IN G S Sym bol V alue U nit Collector-Emitter Voltage VC E O 40 Vdc
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BF240
BF241
O-226AA)
-b22e
BF240,
fl22e
G21e
8F240
BF241 TO92
g11e
CE040
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bf241
Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
Text: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA
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BF240
BF241
GD42m4
bf241
BF241 TO92
bF240 transistor
bf241_
BF241 Philips
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BF241C
Abstract: BF241 BF240
Text: BF240 BF241 HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic package, recom m ended fo r AM m ixers and IF a m p lifiers n A M /F M receivers. Q U IC K R EFE R E N C E D A T A Collector-base voltage open e m itte r v CB0 max. 40 V C o lle c to r-e m itte r voltage (open base)
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BF240
BF241
BF240B
BF241
BF241C
BF241D
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transistor bf 760
Abstract: transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor
Text: TELEFUNKEN ELECTRONIC Ô1C D • öSEGG^b G0DS177 ^ ■ ALGG w * * -—- BF 240 •BF 241 TT id ilFy K lK lK l e le c tro n ic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 240: Controlled AM and FM amplifier stages In common emitter configuration
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G0DS177
569-GS
transistor bf 760
transistor bc 241
transistor bf 241
BF241 TRANSISTOR
bf241
mosfet bf 66
transistor B 722
transistor bf 237
telefunken ta 400
241 transistor
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BF198
Abstract: BF238 BF224 BF194 bf195
Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C. Unless Otherwise Specified) Maximum Ratings Type No. BCX58-7 V CBO ^CEO ^ EBO (V) Mm (V) Min (V) Min 32 32 7 I.Po (W) (A) @Tc=25‘’c 0.45 'cB O ^C B (|JA) @{V) Max BCX5B-9 32 32
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O-92-4
BCX58-7
BCX58-8
O-92-2
BF195
BF196
BF197
BF198
BF238
BF224
BF194
bf195
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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BF311
Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
Text: RF-IF High Frequency Transistors POLA RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max
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BF115
O-72J
BF152
O-106
BF153
BF155
O-72G
BF158
BF311
BF200 transistor
BF494 bf199
BF184 BF494
BF494
BF271
BF597
BFX60
BF184
Bf240
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BF311
Abstract: BF374 BF494 bf199 BF199 BF253
Text: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38
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BF115
BF155
BF167
BF173
BF180
BF181
BF311
BF374
BF494 bf199
BF199
BF253
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bf311
Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Text: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •
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BF115
O-72J
BF152
O-106
BF153
BF155
O-72G
BF158
bf311
BF494
BF253
BF595
BF200 transistor
BF271
BF184
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BF311
Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
Text: RF-IF High Frequency Transistors POLA RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350
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BF115
O-72J
BF152
O-106
BF153
BF155
O-72G
BF158
BF311
BF494 bf199
BF159
BF314
BF167
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BF199
Abstract: No abstract text available
Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C BO ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^C E (PA) 8(V) (|iA) @ (V)
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BCX58-9
O-92-4
BCX58-10
BF199
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bc327 smd
Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
Text: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A
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BC107
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
BC109C
bc327 smd
bd139 smd
2n2907 smd
bc109 smd
bc107 smd
BC640 smd
BC547 smd
2n4401 smd
bc558 SMD
Bd135 smd
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP
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E3Sb05
BF517
BF550
BF554
BF569
OT-143
BFQ82
BFQ196
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TRANSISTOR BF495
Abstract: BF241 TRANSISTOR transistor BF494 BF196 BF199 transistor Bf196 BCX58-9 BCX59-10 BCX59-8 BCX59-9
Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C B0 ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^CE (PA) 8(V ) (|iA) @ (V)
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BCX58-9
O-92-4
BCX58-10
TRANSISTOR BF495
BF241 TRANSISTOR
transistor BF494
BF196
BF199
transistor Bf196
BCX59-10
BCX59-8
BCX59-9
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BF195
Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
Text: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn
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BF195
O-92-2
BF196
BF197
BF198
CD9011F
CD9011G
CD9011H
BF494
BF494 bf199
BF237
BF238
BF496
BF254-3
BF254-4
C0639
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