BF 830 TRANSISTOR Search Results

BF 830 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BF 830 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BF423 Abstract: BF421 bf 421 ic 421 PIN CONFIGURATION BF 200 transistors bf 423 f 423 F532 Q62702-F496 Q62702-F532 Text: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532	Original	PDF	Q62702-F532 Q62702-F496 BF423 BF421 bf 421 ic 421 PIN CONFIGURATION BF 200 transistors bf 423 f 423 F532 Q62702-F496 Q62702-F532
BF422 Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 Text: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531	Original	PDF	Q62702-F531 Q62702-F495 BF422 BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
ic 421 Abstract: F496 BF421 BF423 Q62702-F496 Q62702-F532 Text: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532	Original	PDF	Q62702-F532 Q62702-F496 ic 421 F496 BF421 BF423 Q62702-F496 Q62702-F532
F495 Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422 Text: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531	Original	PDF	Q62702-F531 Q62702-F495 F495 BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
to92c Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N Text: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT	Original	PDF	de/semiconductor/products/35/35 O-92a O-92b O-92d to92c MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
transistors BC 639 029 Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337 Text: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)	Original	PDF	O-92d transistors BC 639 029 BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
CBF423 Abstract: cbf420 CBF422 L250 Text: 'T-zn-o SI EM EN S A K T I E N 6 E S E L L S C H A F 47E D • Ô E 3 S b O S 0 D 2 b S7 1 T «SIEG NF-Bipolar-Transistoren / AF Bipolar Transistors High-Voltage Transistors Plastic Package NPN Type Max. rating s ^CEO Characteris tics h Pto. h FE ''CEsat	OCR Scan	PDF	0D2bS71 O-202 CBF423 cbf420 CBF422 L250
BF 830 transistor Abstract: transistor 602 transistor bf 422 NPN CARACTERISTIQUES transistor bf 422 NPN transistor BF 423 emetteur video IW transistor transistor 139 BF transistor npn bf 422 BF 422 Text: B F 422 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L Compì, of BF 423 Preferred device Dispositif recommandé Video amplification A m plificateur Video vcEO Maximum power dissipation Plastic case Dissipation de puissance maximale	OCR Scan	PDF	CB-76 BF 830 transistor transistor 602 transistor bf 422 NPN CARACTERISTIQUES transistor bf 422 NPN transistor BF 423 emetteur video IW transistor transistor 139 BF transistor npn bf 422 BF 422
Untitled Abstract: No abstract text available Text: S IE M E N S PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 420, BF 422 NPN Type Marking Ordering Code BF 421 BF 423	OCR Scan	PDF	Q62702-F532 Q62702-F496 a235bOS
830 CE Abstract: No abstract text available Text: SIEMENS/ SPCLn SEMICONDS flfl 8236320 SIEMENS/ S P C L , SfcMlUurcua Dif\|ö53b350 DD145bE □ 88D 14262 D 3 1 2 { T ra n s is to rs — bip olar T ra n sisto rs for high voltages P la stic p ackage TO 92 = N ^CEO PNP = P ^ CER* lc P.o. V mA mW /c B O LU_ u	OCR Scan	PDF	53b350 DD145bE 830 CE
BF 422 Abstract: No abstract text available Text: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion	OCR Scan	PDF	Q62702-F531 Q62702-F495 mA102 fiS35b05 D151t BF 422
transistor Bf 606 Abstract: transistor bf 422 transistor 423 transistor 139 BF BF 830 transistor Text: *B F 423 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP SILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 422 Preferred device D is p o s itif recommandé Video amplification A m plifica tio n Video Maxim um power dissipation	OCR Scan	PDF	CB-76 transistor Bf 606 transistor bf 422 transistor 423 transistor 139 BF BF 830 transistor
LTM 4620 Abstract: 2060 JRC jrc 2060 NJU64B1 3565 jrc 2340 NJU6461 NJU6461XC irt 1260 jrc 2740 Text: m-JÊr A NJU6461 P R E L I M I N A R Y 1 2 — C H A R A C T E R D O T 2 - L I N E M A T R I X L C D C O N T R O L L E R PACKAGE OUTLINE GENERAL DESCRIPTION The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip.	OCR Scan	PDF	NJU646 NJU6461 12-character NJU6461 LTM 4620 2060 JRC jrc 2060 NJU64B1 3565 jrc 2340 NJU6461XC irt 1260 jrc 2740
SOT 86 MARKING 03 Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S	OCR Scan	PDF	BF420S T0126 15A3DIN SOT 86 MARKING 03 transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S

K 2545 transistor Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423 Text: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S	OCR Scan	PDF	BF421S BF420S BF423S 150K/W T0126 15A3DIN K 2545 transistor 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
Untitled Abstract: No abstract text available Text: NJU6461 P R E L I M I NARY 1 2 —C H A R A C T E R DOT 2-LINE MATRIX LCD CONTROLLER • GENERAL DESCRIPTION The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip. It contains voltage converter, bleeder resistance, CR	OCR Scan	PDF	NJU6461 NJU6461 12-character 12-Character NJU6461A NJU6461B
transistor bf 422 Abstract: BF 264 PNP transistor 263 BF 422 Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video El-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Kom plem entär zu BF 422	OCR Scan	PDF
VGU3 Abstract: 41CN IO 5503 Text: IN IJ U 6 4 6 1 12-CHARACTER 2-LINE DOT M A T R I X • PRELI Ml N A R Y LCD C O N T R O L L E R GENERAL DESCRIPTION PACKAGE OUTLINE The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip. It contains voltage converter, bleeder resistance, CR	OCR Scan	PDF	12-CHARACTER NJU6461 NJU6461A NJU6461B VGU3 41CN IO 5503
2060 JRC Abstract: jrc 2060 jrc 2740 CA 3140 OP AMP jrc 4555 DJRQ jrc 3580 JRC 2100 CA 1340 jrc 2340 Text: I NJ U 6 4 6 1 12-CHARACTER DOT 2-LIN E MATRIX P R E L I Ml N A R Y LCD CONTROLLER DRIVER GENERAL DESCRIPTION • PACKAGE OUTLINE The NJU6461 is a Dot Matrix LCD controller driver for 12-character 2-line with icon display in single chip. It contains voltage converter, bleeder resistance, CR	OCR Scan	PDF	NJU6461 12-character 5-530-t 2060 JRC jrc 2060 jrc 2740 CA 3140 OP AMP jrc 4555 DJRQ jrc 3580 JRC 2100 CA 1340 jrc 2340
BF 830 transistor Abstract: No abstract text available Text: TIP42F; 42AF TIP42BF; 42CF _ / V . SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are TIP41F, TIP41AF, TIP41BF and TIP41CF.	OCR Scan	PDF	TIP42F; TIP42BF; OT186 TIP41F, TIP41AF, TIP41BF TIP41CF. TIP42F BF 830 transistor
BF184 Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor Text: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB	OCR Scan	PDF	BF184 569-GS BF184 Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
T3D 53 Abstract: TIP42AF lem HA T3D 62 TIP41AF TIP41BF TIP41CF TIP41F TIP42 TIP42BF Text: TIP42F; 42A F J ^ TIP42BF; 42CF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors,eachinaSO T186 envelope w ith an electrically insulated mounting base. NPN complements are TIP41F, T IP41AF, TIP41BF and TIP41CF. QUICK R E FER E N C E DATA	OCR Scan	PDF	TIP42F; TIP42BF; OT186 TIP41F, TIP41AF, TIP41BF TIP41CF. TIP42F T3D 53 TIP42AF lem HA T3D 62 TIP41AF TIP41CF TIP41F TIP42 TIP42BF
diode S6 78A Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14	OCR Scan	PDF	O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
TIP41CF Abstract: TIP41F TIP41AF TIP41BF TIP42BF TIP42F Text: _ PHILIPS TIP42F; 42A F TIP42BF; 42CF J^ INT ERN AT ION AL SbE D • 7110ÛSb Ü04354S 15Û « P H I N r - 3 ? - / < 7 SILIC O N EPITAXIAL P O W E R T R A N S IS T O R S PNP silicon epitaxial power transistors, e a c h in a S O T 1 8 6 envelope with an electrically insulated	OCR Scan	PDF	TIP42F; TIP42BF; 711002b 04354S eachinaSOT186 TIP41F, TIP41AF, TIP41BF TIP41CF. TIP42F TIP41CF TIP41F TIP41AF TIP42BF

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BF 830 TRANSISTOR Search Results

BF 830 TRANSISTOR Result Highlights (5)

BF 830 TRANSISTOR Datasheets Context Search

BF423

BF422

ic 421

F495

to92c

transistors BC 639 029

CBF423

BF 830 transistor

Untitled

830 CE

BF 422

transistor Bf 606

LTM 4620

SOT 86 MARKING 03

K 2545 transistor

Untitled

transistor bf 422

VGU3

2060 JRC

BF 830 transistor

BF184

T3D 53

diode S6 78A

TIP41CF