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Catalog Datasheet	MFG & Type	PDF	Document Tags
rogers Abstract: No abstract text available Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF210451 PTF210451 rogers
210451 Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF210451 PTF210451 210451 smd marking f2 smd transistor marking l6 BDS31314 PTF210451E
Transistor 4733 Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14 Text: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime	Original	PDF	P4525-ND PC56106-ND P220ECT-ND LL2012-F2N7S BDS31314-6-452 35VDC 1-877-GOLDMOS 1301-PTF Transistor 4733 capacitor siemens 4700 35 BDS31314-6-452 CGS C14
PTF210451E Abstract: PTF210451F 200B1 Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.	Original	PDF	PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1
Untitled Abstract: No abstract text available Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest	Original	PDF	PTF210451E PTF210451F 45-watt PTF210451F*
10134 Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180 Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface	Original	PDF	35VDC 1-877-GOLDMOS 1522-PTF 10134 capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
BDS31314 Abstract: PTF210451E PTF210451F Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest	Original	PDF	PTF210451E PTF210451F PTF210451E PTF210451F 45-watt PTF210451F* BDS31314
Untitled Abstract: No abstract text available Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.	Original	PDF	PTF210451E PTF210451F 45-watt H-30265-2 PTF210451F* H-31265-2
BDS31314-6-452 Abstract: Transistor 4733 Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface	Original	PDF	35VDC 1-877-GOLDMOS 1522-PTF BDS31314-6-452 Transistor 4733