rgt-2-103
Abstract: No abstract text available
Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR ISO-9001 Registered Exclusive thick film process results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic RGT SERIES Heat conducting ceramic substrate Digital marking • • • •
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ISO-9001
C/R125
/RT25°
rgt-2-103
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Untitled
Abstract: No abstract text available
Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR Exclusive thick film process results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic RGT SERIES Heat conducting ceramic substrate Digital marking • • • • High conductivity plate-on
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C/R125
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RGT1
Abstract: BD 669
Text: Thick Film Temperature Compensation Resistor Exclusive thick film process results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic RGT Series Heat conducting ceramic substrate • Superior linearity • Stable thick-film technology
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/RT25°
RGT1
BD 669
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Untitled
Abstract: No abstract text available
Text: Resistors Make Possible Thick Film Temperature Compensation Resistor Thick Film Temperature Exclusiv e thick film proces s results in a very linear , negativ e, 3000 ppm/˚C resistanc e temperature characteristic Compensation Resistor RGT Series Heat conducting
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BD302
Abstract: bd304 7500BD deflexion
Text: BD 302 BD 304 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IA L E Compì, of BD 3 0 1 ,3 0 3 Dissipation and Iç /g derating Plastic case Variation de dissipation e t de l$ /g B o itie r plastique 55 W BD 302 BD 304
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Transistors bd 133
Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20
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TPu75
2N6101
Transistors bd 133
BD304
2n3054
81 220
bdy82
2N3713
2N6111
2N3055
bd 135
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transistor bd 202
Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide
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T0-220AB
O-220AB
5-40V
BD710
CB-244
transistor bd 202
transistor BD 249
BDX 241
B0707
BD transistor
transistor bd 911
transistor 2N 3055
5294 power transistor
transistor BD 139
transistor bd 711
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BDX 241
Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide
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T0-220AB
O-220AB
5-40V
BD710
BDX 241
transistor 304
transistor bd 242
transistor 3055
2N3055
transistor BD 249
transistor BD 140
BD 140 transistor
transistor 2N 3055
bd 3055
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BD 139 140
Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)
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O-I26
CB-16
/TO-202
CB-203
CB-244
BD 139 140
bo 135
BD NPN transistors
bo 139
BO 829
B0707
b0709
BD304
B0907
CB-117
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BDX 241
Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide
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T0-220AB
O-220AB
5-40V
BD710
CB-19
BDX 241
BD 35 transistor
3055 transistor
TRANSISTOR BDX
transistor 3055
transistor BUx 49
transistor BD 140
TRANSISTOR BDX 14
transistor 2N 3055
transistor bd 905
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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TESLA KU 602
Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente
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O-220
TESLA KU 602
TESLA KU 601
tesla ku 611
kd 501
KD 3055
vergleichsliste DDR
kd 616
tungsram
UNITRA
vergleichsliste
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Untitled
Abstract: No abstract text available
Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR ISO-9001 ^Registered/ Exclusive thick film process-results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic RGT SERIES Heat conducting ceramic substrate Digital marking High conductivity plate-on
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ISO-9001
C/R125Â
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12085
Abstract: marking Hll
Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR RGT Exclusive thick film process-results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic Heat conducting ceramic substrate SERIES Digital marking High conductivity plate-on Negative temperature coefficient
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R25rC.
12085
marking Hll
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Untitled
Abstract: No abstract text available
Text: BCX54 BCX55 BCX56 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic package intended for applications in thick and thin-film circuits. These transistors are intended fo r general purposes as well as for use in driver stages
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BCX54
BCX55
BCX56
BCX51,
BCX52
BCX53
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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Untitled
Abstract: No abstract text available
Text: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.
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BD825
BD827
BD829
O-202
BD826,
BD828
BD830.
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D 1991 AR
Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0
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BD644;
BD650
711002b
BD643,
BD645,
BD647,
BD651.
BD644
BD650;
D 1991 AR
BD852
transistor d 1991 ar
TRansistor 648
DIODE 646 on
651 diode
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C3117
Abstract: transistor b764 TRANSISTOR D400 transistor D1207 s transistor b985 TRANSISTOR D1347 B892 D1207 s Transistor d1153 B985
Text: SA0YO P C P Power C h i p Pack o te Transistor Series C a s e s F* s at ur* ♦ Very small size making it possible to provide high-densi ty, small-sized hybrid ICs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.
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250mm
2SA1882/2SC4984
2SB1118/2SD1618
2SB1119/2SD1619
2SB1120
2SD1620
2SB1121/2SD1621
2SB1122/2SD1622
2SB1123/2SD1623
2SB1124/2SD1624
C3117
transistor b764
TRANSISTOR D400
transistor D1207 s
transistor b985
TRANSISTOR D1347
B892
D1207 s
Transistor d1153
B985
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
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KT315
Indikatoransteuerung02
136/G
ASZ1016
transistor BU 5027
transistor KT 816
transistor SD 5024
J 5027-R
bu 5027
KT 817 transistor
Transistor KU 607
MDA 2020
RFT e 355 d
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Untitled
Abstract: No abstract text available
Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR RGT E xclusive hick film p ro c e s s -results in a very linear, negative 3000 ppm.1' C re sista nce te m pe ra ture ch aracte ristic Heat co nd uctin g ce ra m ic substrate SERIES D igital m arking High co n d uctivity plate-on
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C/R125
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transistor D 2394
Abstract: f173 fp302
Text: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.
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FP302
FP302
2SC4520
SB05-05CP,
470//F
transistor D 2394
f173
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