ARM7500FE
Abstract: 08FF 0x032000F8
Text: 1 18 11 I/O Subsystems This chapter describes the ARM7500FE I/O subsystems. 18.1 Introduction 18-2 18.2 I/O Address Space Usage 18-3 18.3 Additional I/O Chip Select Decode Logic 18-4 18.4 Simple 8MHz I/O 18-4 18.5 Module I/O 18-11 18.6 PC Bus-style I/O 18-15
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ARM7500FE
0077B
IOCK32
32MHz.
08FF
0x032000F8
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74ALVCH244
Abstract: j2233 RC3235 MSC501 71V416S15
Text: 79EB351 Evaluation Board Manual June 2003 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance
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79EB351
addr15
addr14
addr13)
addr13
74ALVCH244
j2233
RC3235
MSC501
71V416S15
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0.1 MF CAPACITOR
Abstract: MSM6051
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM6051
0.1 MF CAPACITOR
MSM6051
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2931MH155 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor device part number IB2931MH155 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.9-3.1 GHz. While operating in class C
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IB2931MH155
IB2931MH155
IB2931MH155-REV-NC-DS-REV-A
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DB29 connector male
Abstract: 74ALVCH244 conn 2X5 BD S34 crt monitor DB9 male connector to DB15 male CONNECTOR DB26 77V105 D2396 8MBX32
Text: 79EB355 Evaluation Board Manual June 2003 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance
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Original
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79EB355
addr15
addr14
addr13)
addr13
DB29 connector male
74ALVCH244
conn 2X5
BD S34
crt monitor DB9 male connector to DB15 male
CONNECTOR DB26
77V105
D2396
8MBX32
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BD182
Abstract: BD183 BD 782 BD181 T800MA BD 183 J BD 183
Text: BD 181 B D 182 BD 183 PNP S ILIC O N TR A N S IS TO R S , HOMOBASES TR AN S IS TO R S PNP S IL IC IU M , HO M O B A S E S - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance - High current switching BD 181 BD 182 BD 183
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CB-19
BD182
BD183
BD 782
BD181
T800MA
BD 183 J
BD 183
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SDT 9202
Abstract: No abstract text available
Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A
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BD136
O-126
O-220
SDT 9202
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I C ON DUCTOR INC 02 KS54AHCT j O O KS74AHCT , u u DE | 7 T L , 4 1 4 S □ OG bD t. 4 1 | ' V-^ys -07 Dual Carry-Save Füll Adders FEATURES DESCRIPTION • • • • • The '183 is a dual full adder features an Individual carry output from each bit for use in multiple-input, carry-save
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KS54AHCT
KS74AHCT
KS74AHCT:
KS54AHCT:
125CC
300-mil
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: • 1N6702US AVAILABLE IN JAN.JANTX AND JANTXV 1N6700US thru 1N6702US and CDLL6700 thru CDLL6702US and CDLL5A20 thru CDLL5A40 • 5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED. DOUBLE PLUG CONSTRUCTION
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1N6702US
1N6700US
1N6702US
CDLL6700
CDLL6702US
CDLL5A20
CDLL5A40
2302S54
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PDF
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F075
Abstract: f050 393 f050 FE23A
Text: GE P o w e r E lectrolytic C apacitors ” r~ ~ \ 8 5 ° C Product 23A SERIES j 50 to 150 w v d c ^ . s 9 0 0 to 2 3 0 ,0 0 0 uF STANDARD PRODUCT UNE • Broad Capacitance Range • Increased Volumetric Efficiency • Low ESR •
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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3-582308-1
Abstract: B 764 5-582843-1 1-582843-4 3-582152-9
Text: 7 8 DRAWING MADE THIS IN DRAWING THIRD IS ANGLE UNPUBLISHED. COPYRIGHT 19 6 5 3 4 2 1 PR O J EC TI O N BY AMP INCORPORATED. ALL INTERNATIONAL L OC ,19 RELEASED FOR P U B L I C A T I O N RIGHTS DF RESERVED. DIST R E V IS IO N S HO ZONE LTR DESCRIPTION AL
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DF-2931
15-APR-9G
anp34
/anp34
74/ednniod
3-582308-1
B 764
5-582843-1
1-582843-4
3-582152-9
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PDF
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1N6701
Abstract: 1N6700US 1N6702US CDLL5A20 CDLL5A40
Text: • 1N6702US AVAILABLE IN JAN,JANTX AND JANTXV 1N6700US thru 1N6702US and CDLL67O0 thru CDLL6702US and CDLL5A20 thru CDLL5A40 • 5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BO NDED. D O U B LE PLU G C O N STR U C TIO N
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1N6702US
1N6700US
CDLL67O0
CDLL6702US
CDLL5A20
CDLL5A40
1N6701
CDLL5A40
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PDF
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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d705
Abstract: BD706 TRANSISTORE BD705 BD707 BD708 BD709 BD710 BD711 BD712
Text: • 7 ^ 2 3 7 0Q5ÛH25 SGS-THOMSON ^D^@g[Lg g¥il(ô ia i S G 3 _ BD705/706/707/708 BD709/710/711 /712 S-THOMSON 3ÜE D POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistore in Jedec TO220 plastic package intended for use in power linear
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7c12tÃ
D705/706/707/708
BD709/710/7117712
BD705,
BD707,
BD709
BD711
O-220
BD706,
BD708,
d705
BD706
TRANSISTORE
BD705
BD707
BD708
BD710
BD712
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PDF
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SDT 9202
Abstract: bdx 338 BU 450 bdx
Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74
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cd 332 m
Abstract: 1h1 163
Text: GE STANDARD UNE DC POWER ELECTROL YT/C PRODUCTS 50-250 W VDC STANDARD SERIES NOTE GE PART NUMBER M AX ESR MAX R M S RIPPLE CURR@ +85 C, 120Hz HEIGHT 120HZ-25C 6200 23C 622 F 050 BB 1H1 1.375 2.125 0.0237 6.9 8800 23C 882 F 050 BC 1H1 1.375 2.625 0.0174 8.8
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120HZ-25C
120Hz
163F050CC1H1
cd 332 m
1h1 163
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PDF
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GE 172
Abstract: No abstract text available
Text: GE Pow er Electrolytic Capacitors _ ' ^ 8 5 ° C Product 50 to 250 w v d c 23B SERIES | >- n 300 to 140,000 uF PREMIUM PRODUCT MNE • Broad Capacitance Range • Increased Volumetric Efficiency • Low ESR •
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LB 1416
Abstract: No abstract text available
Text: RN1414,1415,1416 RN1417,1418 RN 1Î14 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 -0 3 + 0.25 1.5-0.15 • W ith B uilt-in B ias Resistors • Simplify C ircuit Design • Reduce a Q uantity of P arts and M anufacturing Process
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RN1414
RN1417
RN2414
RN2418
RN1415
RN1416
RN1418
O-236MOD
LB 1416
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code
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Q62702-F1316
OT-23
fl235L
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: .¿I LSI LOGIC L64735 Discrete Cosine Transform Processor Description The Discrete cosine transform processor com putes both the forward and inverse DCT over 8 x 8 data blocks and meets the proposed International Consultative Committee for Telephones and Telegraphs CCITT standard
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L64735
11-bit
12-bit
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PDF
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scr C35
Abstract: SCR C38 SCR c50
Text: DWG NO. 3H <C-/K\0£>*r -X X X 'X X REV ~r~ SCR NO. 2Ö91 2376 / y"\ W 1 H 2564 J 2845 K L M 3532 4298 5494 N 5743 REV N DESCRIPTION BY DATE REVISED AND REDRAWN CHG POWER CONTACT FINISHj SEE SH 7 CORRECT DIM LOC SH 4 ADDED 85 GM MIN TD SIG CONT NORM F SH 7j
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438-5004-A00
438-5002-AOO
A1004-XXXXX
6061-T6
QQ-A-200/8.
C-A1004-XXXXX
scr C35
SCR C38
SCR c50
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PDF
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Untitled
Abstract: No abstract text available
Text: BD Series Washable DIP Switches % PROVEN WASHABLE DESIGN— NO BOOTS, CAPS OR TAPE REQUIRED— OPEN BASE DESIGN ALLOWS CLEANERS TO FLUSH THROUGH— NEW CLOSED BASE MODELS ALSO AVAILABLE • SLIDE ACTUATORS WITH POSITIVE DETENT— PREVENT ACCIDENTAL ACTUATION
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17b066S
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PDF
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marking A7p
Abstract: a7p marking
Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T DF C O R P O R A TIO N . R E V IS IO N S HO LTR AV A MAX -.860 [21.84] D E S C R IP T IO N
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I20CT07
marking A7p
a7p marking
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