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    BD 140 TRANSISTOR Search Results

    BD 140 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD 140 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    BD140 application circuits circuits

    Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138
    Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


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    PDF BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138

    bd140 pin out

    Abstract: BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140
    Text: ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS


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    PDF BD136 BD138 BD140 BD140-10 225AA r14525 BD136/D bd140 pin out BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140

    SDT 9202

    Abstract: No abstract text available
    Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A


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    PDF BD136 O-126 O-220 SDT 9202

    tfk 138

    Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136
    Text: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W


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    transistor BD 141

    Abstract: No abstract text available
    Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126


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    PDF BD136. BD138, BD140 6235bQS BD138. transistor BD 141

    8d136

    Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
    Text: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6


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    PDF 8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133

    transistor BD 378

    Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
    Text: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.


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    PDF BD136 BD138 BD140 OT-32 BD140 transistor BD 378 BD140 pnp transistor transistors bd136 bd136 N

    BD138

    Abstract: bd140 Complement BD136 bd139 Complement transistor BD140 BD135 BD137 BD139 BD140 power transistor bd136
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector Base Voltage :B D 1 3 6 : BD138 : BD140 C ollector E m itter Voltage : BD 136


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    PDF BD136/138/140 BD135, BD137 BD139 BD136 BD138 BD140 BD138 bd140 Complement bd139 Complement transistor BD140 BD135 BD140 power transistor bd136

    TRANSISTOR BC 136

    Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
    Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


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    PDF T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711

    Untitled

    Abstract: No abstract text available
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD138 - 60 V : BD140 - 80 V - 45 V C ollector Base Voltage


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    PDF BD136/138/140 BD135, BD139 BD138 BD140 BD136

    TRANSISTOR C 3205

    Abstract: transistor c 3228 TRANSISTOR C 3205 CIRCUIT DIAGRAM 3205 transistor lambda LAS 3205 las 3228 lambda Lambda POWER Hybrid VOLTAGE REGULATOR LAMBDA Voltage Regulator CURRENT12-3 LAS 3228
    Text: VEEC O/L AM BD A SEMICOND GE D | T4M7b3b ODOOTÖB 1 T - S Z 'U A LAMBDA LINEAR REGULATORS -1 3 LAS 3 2 0 0 SERIES 10 AMP, 140 WATT POSITIVE HYBRID VOLTAGE REGULATORS . ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAXIMUM UNITS V,N 40 Volts Input-O utput


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    PDF 0D007Ã 000D7Ã 075-k-| TRANSISTOR C 3205 transistor c 3228 TRANSISTOR C 3205 CIRCUIT DIAGRAM 3205 transistor lambda LAS 3205 las 3228 lambda Lambda POWER Hybrid VOLTAGE REGULATOR LAMBDA Voltage Regulator CURRENT12-3 LAS 3228

    10 watt power transistor bd

    Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc


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    PDF BD136 BD138 BD140 BD140-10 10 watt power transistor bd transistor BD 140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS GENERAL CASES: GENERAL TO- 3 F - 22 PURPOSE TRANSISTORS pt o t T r^ E S ^ W ! NPN PNP 115 : 2N 5874 : 2N 5874A 115 115 ! 2N 5874B 1 2N 5875 150 ! 2N 5875/1 150 150 : 2N 5875/2 150 1 2N 5876 ! 2N 5876A 150 150 ! 2N 5876B 150 : 2N 5877 150


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    PDF 5874B 5876B 5878B O-220

    Untitled

    Abstract: No abstract text available
    Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , B D 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e


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    PDF BD440/442

    BD 139 transistor

    Abstract: TRANSISTOR BD 136 BDI36 BD140 BD140-10 BDI38 BD 140 transistor 136 138 140 BD136 transistor bd 138
    Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 B D 140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. •


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    PDF BD136/D BD136 BD138 BD140 O-225AA BD 139 transistor TRANSISTOR BD 136 BDI36 BD140-10 BDI38 BD 140 transistor 136 138 140 transistor bd 138

    tfk 135

    Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
    Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W


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    PDF erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


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    PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


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    PDF TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    8D139

    Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
    Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126


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    PDF fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


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    PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    BD 139 N

    Abstract: transistor BD 141 bd139
    Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to


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    PDF 023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139