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    BC638 TRANSISTOR Search Results

    BC638 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    BC638 TRANSISTOR Price and Stock

    onsemi BC638

    Trans GP BJT PNP 60V 0.5A 3-Pin TO-92 Bulk
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC638 7,874
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.047
    		Buy Now

    BC638 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc640

    Abstract: bc636 bc638
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60


    Original     		PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640

    BC640

    Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage


    Original     		PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640 BC640 bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1

    bc640

    Abstract: BC638 BC636
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage VCEO VCBO Value


    Original     		PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640

    bc640

    Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. bc640 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B

    24825

    Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC640

    bc638 equivalent

    Abstract: bc640 equivalent bc636
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector – Emitter Voltage VCEO –45 –60 –80 Vdc Collector – Base Voltage


    Original     		PDF BC636 BC638 BC640 BC636 BC638 226AA) bc638 equivalent bc640 equivalent

    BC638

    Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
    Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


    Original     		PDF BC638 BC638 BC637 transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP

    BC640

    Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A

    BC640-16

    Abstract: BC640 BC64 BC638G BC638 BC638ZL1 BC638ZL1G BC640G BC640ZL1 BC640ZL1G
    Text: BC638, BC640, BC640−16 High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC638 BC640 Collector-Base Voltage Vdc −60 −80


    Original     		PDF BC638, BC640, BC640-16 BC638 BC640 BC638/D BC640-16 BC640 BC64 BC638G BC638 BC638ZL1 BC638ZL1G BC640G BC640ZL1 BC640ZL1G

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES 2000. 10. 2 Revision No : 0 1/1


    Original     		PDF BC638

    BC640

    Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
    Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636


    Original     		PDF BC636/BC638/BC640 BC636 BC638 BC640 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP

    bc640

    Abstract: st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC637 BC638 BC639
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. bc640 st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC638 BC639

    BC640

    Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA BC640 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0


    OCR Scan     		PDF BC636 BC638 BC640 b3b72SS

    bc640

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC636 BC638 BC640 -6 0 -6 0 Vdc -8 0 Vdc VCEO -4 5 C ollector-B ase Voltage VCBO -4 5


    OCR Scan     		PDF BC636 BC638 BC640 BC640

    bc640c

    Abstract: No abstract text available
    Text: BC636 BC638 BC640 M A X IM U M RATINGS Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage Rating v CEO -4 5 -6 0 -8 0 Vdc Collector-Base Voltage v CBO -4 5 -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -5 .0 Collector Current — Continuous >C -0 .5 Ade Total Device Dissipation


    OCR Scan     		PDF BC636 BC638 BC640 BC638 O-226AA) bc640c

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR TECHNICAL DATA BC637 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC638. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF BC637 BC638. 100j/A, 10j/A, 150mA 500mA, 500mA 100MHz BC637 BC638

    BC638

    Abstract: No abstract text available
    Text: Transistors BC638 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 250C) C haracteristic Sym bol Collector Emitter Voltage at R BE = 1Kohm VcER Collector Emitter Voltage VcES Collector Emitter Voltage Emitter Base Voltage


    OCR Scan     		PDF BC638 BC638

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR TECHNICAL DATA BC638 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC637. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF BC638 BC637. -10mA, -100juA, -10J/A, 150mA --500mA, -50mA --500mA -50mA, BC637 BC638

    c640 pnp

    Abstract: c 64016 C 63816 c638 Philips 64016
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A


    OCR Scan     		PDF BC636; BC638; BC640 BC639. BC636 115002/00/03/pp8 c640 pnp c 64016 C 63816 c638 Philips 64016

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.


    OCR Scan     		PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638

    Untitled

    Abstract: No abstract text available
    Text: BC635 THRU’ BC640 COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors for AF driver stages and amplifier applications up to 1A. ‘ TO-92 L Collector-Emitter Voltage


    OCR Scan     		PDF BC635, BC637, BC639 BC636, BC638, BC640 3C637 BC638

    bc638

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.


    OCR Scan     		PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640