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    BC 107 TRANSISTOR Search Results

    BC 107 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 107 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infrared based security system

    Abstract: elevator schematic PROJECT INFRARED REMOTE SWITCH USING MICROCONTROLLER remote control PROGRAM PIC16F84 PIC16F84 example codes Remote keyless system PIC16F84 16 78L05 TO-92 pic16f84 project 78L05 voltage regulator
    Text: June 11, 1999 Recordable Infrared Remote Keyless Entry System Gecko Technologies Victor Ting Simon Fraser University School Of Engineering Science 107-1925 West 2nd Ave. Vancouver, BC CANADA 604 836-1259 [email protected] Abstract This project uses a PIC16F84 to record and playback two variable length codes


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    PDF PIC16F84 12-volt infrared based security system elevator schematic PROJECT INFRARED REMOTE SWITCH USING MICROCONTROLLER remote control PROGRAM PIC16F84 PIC16F84 example codes Remote keyless system PIC16F84 16 78L05 TO-92 pic16f84 project 78L05 voltage regulator

    2N9303

    Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
    Text: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2


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    PDF 300mW 200mW V/10uA) 10mA/0 2N9303 2N24832 2N24843 cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


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    PDF BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    PDF 23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    PDF 023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

    transistor bc 325

    Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
    Text: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.


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    PDF h21e- transistor bc 325 transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


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    PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330

    ZO 109

    Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.


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    PDF BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    PDF BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a

    BC107 characteristic

    Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
    Text: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage


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    PDF BC107, BC109f O-206AA) BC107 characteristic BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic

    Untitled

    Abstract: No abstract text available
    Text: BC107, A, B, C thru BC109, A, B, C MAXIMUM RATINGS Rating Symbol BC BC BC 107 108 109 Unit C o lle c to r-E m itte r V o lta g e VCEO 45 25 25 Vdc C o lle c to r-B a s e V o lta g e VCBO 50 30 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 5 5 CASE 22-03, STYLE 1


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    PDF BC107, BC109, O-206AA)

    bc109c

    Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
    Text: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s


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    PDF BC107, BC109C bc109c BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C

    fr 309

    Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
    Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen


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    PDF BC179 fr 309 BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731

    bc 107 transistor

    Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP


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    PDF BSX52 BSW21 BSW22 BSX51 BSW22 BSX52 bc 107 transistor transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16

    BC 109C transistor

    Abstract: bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B CIL TRANSISTOR transistor BC 106 transistor BC 368 TRANSISTOR TO-106 transistor BC 108C BC 177A
    Text: METAL-CAN & EPOXY TRANSISTORS CONTIN ENT AL DEVICE INDIA 32E D • E3Ö33T4 QQDDD13 4 ■ Jl. £ f-,2/ COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO Volts min VCBO Volts min VEBO Volts rhin hFE at bias 1C mA VCE Volts min/max ICM mA max PTA mW max 625


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    PDF QQDDD13 lo-32 BC 109C transistor bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B CIL TRANSISTOR transistor BC 106 transistor BC 368 TRANSISTOR TO-106 transistor BC 108C BC 177A

    BC107 characteristic

    Abstract: BC107 BC109 BC108 characteristic BC109 characteristic BC108 bc109 gain BC109 am Transistor BC107 Transistor BC109
    Text: BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups A, B and C according to their current gain. Type BC107 is available in groups A and B, type BC108 in groups A, B and C, and type


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    PDF BC107, BC108, BC109 BC107 BC108 BC109 BC107 characteristic BC108 characteristic BC109 characteristic bc109 gain BC109 am Transistor BC107 Transistor BC109

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    TRANSISTOR BC 313

    Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP


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    PDF BSX52 BSW21 BSW22 BSX51 BSW22 290AL-CASE/BOITIER TRANSISTOR BC 313 npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    BC113

    Abstract: No abstract text available
    Text: CONSUMER TRANSISTORS continued < _§ X CD E u > > CD O a. """a) o ’ o o n o @ Li. a. >• UJ ll.c PACKAGE P O L A R ITY DESCRIPTION (A )0 3 3 A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5


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    BC113

    Abstract: audio NPN bc 657 BC 114
    Text: CONSUMER TRANSISTORS continued > Li. a. < _§ X CD E u > CD O """a) o ’ o o n o @ a. >• UJ ll.c PACKAGE POLARITY DESCRIPTION (A )03 3A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5 0.85 BC 393


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