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    BB304 Search Results

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    BB304 Price and Stock

    Hammond Manufacturing H1BB3042BK

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    JRH Electronics 805-061-16Z18-4BB304

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16Z18-4BB304 1
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    JRH Electronics 805-061-16MT8-6BB304

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16MT8-6BB304 1
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    JRH Electronics 805-061-16NF8-4BB304

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16NF8-4BB304 1
    • 1 $1486.04
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    JRH Electronics 805-061-16Z18-7BB304

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16Z18-7BB304 1
    • 1 $1544.54
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    BB304 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BB304 Siemens Transistor / Diode Selection Guide Original PDF
    BB304 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BB304 Siemens Cross Reference Guide 1998 Original PDF
    BB304 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BB304 Philips Components Philips Data Book Scan Scan PDF
    BB304 Telefunken Electronic Silicon Epitaxial Planar Dual Capacitance Diodes Scan PDF
    BB304A Siemens Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) Original PDF
    BB304BLUE Siemens 2V Vrrm, 47pF Capacitance Varactor Diode Scan PDF
    BB304C Hitachi Semiconductor Bias Controlled Monolithic IC UHF RF Amplifier Original PDF
    BB304C Hitachi Semiconductor Build in Biasing Circuit MOS FET IC UHF-VHF RF Amplifier Original PDF
    BB304C Renesas Technology Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Original PDF
    BB304C Renesas Technology Built in Biasing Circuit MOS FET IC VHF RF Amplifier Original PDF
    BB304GREEN Siemens 2V Vrrm, 46pF Capacitance Varactor Diode Scan PDF
    BB304M Hitachi Semiconductor Build in Biasing Circuit MOS FET IC UHF-VHF RF Amplifier Original PDF
    BB304M Hitachi Semiconductor Bias Controlled Monolithic IC UHF RF Amplifier Original PDF
    BB304M Renesas Technology Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Original PDF
    BB304M Renesas Technology Built in Biasing Circuit MOS FET IC VHF RF Amplifier Original PDF
    BB304RED Siemens 2V Vrrm, 43pF Capacitance Varactor Diode Scan PDF
    BB304WHITE Siemens 2V Vrrm, 45pF Capacitance Varactor Diode Scan PDF
    BB304YELLOW Siemens 2V Vrrm, 44pF Capacitance Varactor Diode Scan PDF

    BB304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002743

    Abstract: No abstract text available
    Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304C ADE-208-606C 200pF, OT-343mod) BB304C Hitachi DSA002743

    Untitled

    Abstract: No abstract text available
    Text: BB304C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0826-0600 Previous ADE-208-606D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304C REJ03G0826-0600 ADE-208-606D) 200pF, OT-343mod) PTSP0004ZA-A BB304C

    Hitachi DSA002743

    Abstract: No abstract text available
    Text: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304M ADE-208-605C 200pF, OT-143mod) BB304M vo005-1835 D-85622 Hitachi DSA002743

    1SV70

    Abstract: BB304C SC-82AB Hitachi DSA00396
    Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C Z 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304C ADE-208-606C 200pF, OT-343mod) BB304C 1SV70 SC-82AB Hitachi DSA00396

    1SV70

    Abstract: BB304C 4K60 K704 DSA003643
    Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304C ADE-208-606D 200pF, OT-343mod) BB304C 1SV70 4K60 K704 DSA003643

    1SV70

    Abstract: BB304M DSA003732
    Text: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C Z 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304M ADE-208-605C 200pF, OT-143mod) BB304M 1SV70 DSA003732

    1SV70

    Abstract: BB304M K390
    Text: BB304M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0827-0600 Previous ADE-208-605D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304M REJ03G0827-0600 ADE-208-605D) 200pF, OT-143Rmod) PLSP0004ZA-A BB304M 1SV70 K390

    Untitled

    Abstract: No abstract text available
    Text: BB304M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0827-0600 Previous ADE-208-605D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304M REJ03G0827-0600 ADE-208-605D) 200pF, OT-143Rmod) PLSP0004ZA-A BB304M

    BB304M

    Abstract: 1SV70 DSA003643
    Text: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304M ADE-208-605D 200pF, OT-143Rmod) BB304M 1SV70 DSA003643

    BB304CDW

    Abstract: 1SV70 BB304C
    Text: BB304C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0826-0600 Previous ADE-208-606D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original
    PDF BB304C REJ03G0826-0600 ADE-208-606D) 200pF, OT-343mod) PTSP0004ZA-A BB304C 20ijing BB304CDW 1SV70

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original
    PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original
    PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original
    PDF

    MOSfet 4362

    Abstract: neosid v6 TDA4362X 680 NEOSID neosid BB304 4362 4362 MOSFET 680 3 NEOSID neosid v7
    Text: FS: 04/93 Page 1 SIEMENS AG IC-SPECIFICATION TDA 4362 X ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Differences to the last edition


    Original
    PDF V66047-S1603-C200-G1 V66047-S1603-C200-G2 MOSfet 4362 neosid v6 TDA4362X 680 NEOSID neosid BB304 4362 4362 MOSFET 680 3 NEOSID neosid v7

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    BF963

    Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
    Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99


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    PDF OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original
    PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original
    PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    Untitled

    Abstract: No abstract text available
    Text: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-605C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    OCR Scan
    PDF BB304M ADE-208-605C 200pF, OT-143mod) BB304M SC-61

    BB204B

    Abstract: No abstract text available
    Text: Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 through PO-6 Varactor Tuning Diodes 1 T yp e M a x im u m Ratings VRM V BB112 BB204G BB204B BB304 CD at mA 12 32 32 32 pF 50 50 50 50 Case Characteristics (TA= 2 5 C ) CD pF


    OCR Scan
    PDF BB112 BB204G BB204B BB304 BB512 BB804 BAT15-014

    Untitled

    Abstract: No abstract text available
    Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    OCR Scan
    PDF BB304C ADE-208-606C 200pF, OT-343mod) BB304C SC-82AB

    SIEMENS BB409

    Abstract: bb409
    Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/


    OCR Scan
    PDF fi23SbOS BB419 OD-123 BB409 BB439 OD-323 BB512 BB515 SIEMENS BB409 bb409