HDL6V5581
Abstract: MAX14510E MAX14523 MAX4951BE 10-UTQFN MAX4945 Mini DisplayPort connector max14502 max4944 SAs SOT23
Text: Signal Routing & Protection 1st Edition September 2009 Dual-channel buffers support up to 6Gbps data rates and minimize jitter effects Ideal for enterprise and computing applications Reduces system Protects agains unwanted nois with out-of-ban OOB detectio
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MAX4951BE)
MAX4951
HDL6V5581
MAX14510E
MAX14523
MAX4951BE
10-UTQFN
MAX4945
Mini DisplayPort connector
max14502
max4944
SAs SOT23
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MC34074 LINEAR INTEGRATED CIRCUIT H I GH SLEW RAT E, WI DE BAN DWI DT H , SI N GLE SU PPLY OPERAT I ON AL AM PLI FI ER SOP-14 ̈ DESCRI PT I ON The UTC MC34074 offer 4.5MHz of gain bandwidth product, 13V/ s slew rate and fast setting time without the use of JFET
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MC34074
OP-14
MC34074
QW-R105-018
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GLONASS chip
Abstract: BGM1043 GLOBAL NAVIGATION 3000 BGM1043N7 l1 l2 gps antenna schematic AN287 lte tranceiver 1800MHz
Text: B G M10 43 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms G NS S A p plic atio ns with hig he r LT E Ban d -13 rej ec tion Applic atio n N ote A N 287 Revision: Rev. 1.0 2012-06-19 RF and P r otecti on D evic es Edition 2012-06-27
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M110416
BGM1043N7
AN287,
AN287
GLONASS chip
BGM1043
GLOBAL NAVIGATION 3000
BGM1043N7
l1 l2 gps antenna schematic
AN287
lte tranceiver 1800MHz
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Bluetooth Jammer
Abstract: BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter
Text: B GA 23 1L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Applic atio n N ote A N 273 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es Edition 2011-09-16 Published by
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H1605
BGA231L7
AN273,
AN273
Bluetooth Jammer
BAND13
LTE Receiver
BGA231L7
gps transmitter block diagram
827mhz
murata LTE saw filter
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4G lte RF Transceiver
Abstract: murata LTE saw filter UMTS band 1 SMA duplexer 4G LTE PA murata LTE duplexer band 20 HSPA modem LTE bandpass filter AN241 LTE rf front end LTE filter band 40
Text: B GA 735 N 16 B GA 735 N 16 fo r 3 G / HS P A/L T E Applic atio ns S uppo r ting Ban d s 1, 2 and 5 with R efe r ence Res i s tor Rr ef= 27 k Ω Applic atio n N ote A N 241 Revision: Rev. 1.0 2010-08-31 RF and P r otecti on D evic es Edition 2010-08-31 Published by
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BGA735N16
AN241,
BGA735N16
AN241
4G lte RF Transceiver
murata LTE saw filter
UMTS band 1 SMA duplexer
4G LTE PA
murata LTE duplexer band 20
HSPA modem
LTE bandpass filter
AN241
LTE rf front end
LTE filter band 40
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GLOBAL NAVIGATION 3000
Abstract: BGM1043 BGM1043N7 BGM1032N7 AN-294 schematic diagram receiver data circuit satellite
Text: B G M10 43 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms G NS S A p plic atio ns with hig he r LT E Ban d -13 rej ec tion us ing 0402 c o mpone nts Applic atio n N ote A N 294 Revision: Rev. 1.0 2012-07-23 RF and P r otecti on D evic es
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BGM1032N7
M110416
BGM1043N7
AN294,
AN294
GLOBAL NAVIGATION 3000
BGM1043
BGM1043N7
AN-294
schematic diagram receiver data circuit satellite
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4G lte RF Transceiver
Abstract: 3G HSDPA circuits diagram murata LTE saw filter 3g modem circuit murata LTE duplexer band 20 LTE bandpass filter BGA735N16 lte RF Transceiver maxim transceiver 4G LTE layout of mobile bug system
Text: B GA 735 N 16 B GA 735 N 16 fo r 3 G / HS P A/L T E Applic atio ns S uppo r ting Ban d s 3, 7 and 2 0 with R efe r ence Res i s tor Rr ef= 27 k Ω Applic atio n N ote A N 233 Revision: Rev. 1.0 2010-08-24 RF and P r otecti on D evic es Edition 2010-08-24
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BGA735N16
BGA735N16
AN233,
AN233
4G lte RF Transceiver
3G HSDPA circuits diagram
murata LTE saw filter
3g modem circuit
murata LTE duplexer band 20
LTE bandpass filter
lte RF Transceiver maxim
transceiver 4G LTE
layout of mobile bug system
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Untitled
Abstract: No abstract text available
Text: B GA 231L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Us ing Seri es No tc hes Applic atio n N ote A N 276 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es
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BGA231L7
AN276,
AN276
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1SV102
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV102 A M RADIO BAN D TUNING APPLICATIONS. • • • H igh C apacitance Ratio H igh Q Sm all Package. : C 2 y / C 2 5 V = 23 Typ. : Q = 400 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV102
10//A
1SV102
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Untitled
Abstract: No abstract text available
Text: 2961 HIGH-CURRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER—W ITH INTERNAL CURRENT SENSING AND CONTROL The UDN2961B and UDN2961W are 3.4 A half bridges designed specifically for driving solenoid printheads, stepper motors, and dc motors. The UDN2961 BAN consists of a power source driver output,
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UDN2961B
UDN2961B
UDN2961W
UDN2961
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Untitled
Abstract: No abstract text available
Text: 1SS154 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE U nit in mm U H F - S BAN D M IXER / DETECTOR APPLICATIONS. + 0.5 2 5 -0 3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range
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1SS154
SC-59
10//A
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tangential
Abstract: AEY17 germanium rectifier diode K1007
Text: AEYI7 MICROWAVE DETECTOR DIODE Sub-m iniature germ anium bonded backward diode p rim arily intended for broadband low lev el d etecto r applications at X -ban d. QUICK R E FE R E N C E DATA Frequency range 1 to 18 GHz Typ. zero bias tangential sen sitivity at X-band
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AEY17
K1007
AEY17
18GHz,
45MHz)
375GHz,
200uW,
tangential
germanium rectifier diode
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LED 690 nm diode
Abstract: bar code phototransistor OPTO TECHNOLOGY INC LED 690 nm Opto Technology bar code lens phototransistor otr690 phototransistor visible light OTR680
Text: m OPTO bö022MS TECHNOLOGY 00Q0234 2 INC • OTI 45E 5 m - ~ ? 3 OPTO TECHNOLOGY — BAR CODE READER TYPE OTR 680/0TR 690 Features ■ Ban code reader/ fine line sensor ■ . 007"-. 013" resolution ■ Compact size Description Opto Technology’s OTR 680/690
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680/0TR
660nm
562CHADDICK
IL60090
bfl02245
D00Q237
T-41-73
OTR68O
0TR69Q
LED 690 nm diode
bar code phototransistor
OPTO TECHNOLOGY INC
LED 690 nm
Opto Technology
bar code lens phototransistor
otr690
phototransistor visible light
OTR680
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dual gate mosfet in uhf amplifier
Abstract: diode DB 3 C Tuner uhf antenna amplifier design vhf uhf tuner vhf uhf band switching diode CCIR uhf amplifier design Transistor dual gate mosfet in vhf amplifier antenna tuner
Text: Tuning Units Tuners Type Fig. Nr. Function Description 162 1 Vari-tuner for V H F and UHF. M ulti-band tuner with c a p a c ita n c e diod e tuning and ban sw itching by sw itching diodes. Tuned input circ u it optional, U H F up to channel 68 Variou s antenna inputs possible.
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8929U
Abstract: fm ic vco 100mhz to 1ghz
Text: Philips Semiconductors Product specification Low-voltage LNA, mixer and VCO-1GHz SA620 DESCRIPTION FEATURES The S A 620 is a c o m b in e d R F am plifier, VC O w ith tracking ban d p a ss filte r and m ixer • Low c u rre n t consu m ptio n: 10.4m A nom inal,
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1200M
SA620
8929U
fm ic vco 100mhz to 1ghz
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Untitled
Abstract: No abstract text available
Text: ANALO G D E V IC E S CMOS Low Voltage 4 i l Quad SPST Switches ADG711/ADG712/ADG713 FUNCTIONAL BLOCK DIAGRAMS FEATURES +1.8 V to +5.5 V S in gle Su p p ly Low On Resistance 2.5 i l Typ Low O n-Resistance Flatness -3 dB Ban dw idth > 200 M H z Rail-to-Rail Operation
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16-Lead
ADG711/ADG712/ADG713
R-16A)
RU-16)
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Untitled
Abstract: No abstract text available
Text: LF2242 D E V IC E S 12 16-bit Half-Ban d Interp olating/ D e cim a tin g Digital Filter N C O R P O H A I H 'J DESCRIPTION FEATURES □ 66 M H z C lock Rate □ Passband 0 to 0.22/ s Ripple: ±0.02 dB □ Stopband (0 .2 8 /s to 0 .5 /s) Rejection: 59.4 dB
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LF2242
16-bit
F2242
LF2242JC33
LF2242JC25
LF2242JC15
0/05/93-LD
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CLC940AI
Abstract: CLC940 CLC940AM
Text: Fast Sampling, Wideband Track and Hold Amplifier APPLICATIONS: FEATURES typical : • • • • • • 10ns h o ld -to -tra c k a c q u is itio n tim e • 12ns tra c k -to -h o ld se ttling tim e • 1 ps a pe rtu re jitte r • 150M H z sm all signal ban d w id th
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CLC940
CLC940
CLC940AI
CLC940AM
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Untitled
Abstract: No abstract text available
Text: EL2020C f ib f lilK HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2020C 5 0 MHZ CUYV€Tlt F€€Clb lCk A TTipllfiCV F e a tu r e s G e n e r a l D e s c r ip t io n • • • • • • • • • T he EL2020 is a fast settling, wide ban d w id th am plifier o p ti
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EL2020C
EL2020C
EL2020
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32V zener
Abstract: Electronic Volume Controller IC flyback TV sanyo transistor band color decoders power ic LA7930 LA7920 op amp as comparator Service mode tv zener diode color band
Text: SANYO SEMICONDUCTOR CORP 7b 7997076 SANYO SEMICONDUCTOR CORP DE | 7 ^ 707 ^ OOOlfl^fi b ?6C 0 1 6 9 8 monolithic linear IC LA 7920 TV TUNER BAN D SELECTOR D J~~7 f'0 7 'ö S' CIRCUIT DRAWING N6.S193 • 3017B The L A 7 9 2 0 is a tu n e r band selector IC intended fo r use in electronic tu n in g typ e T V sets. I t outputs
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LA7920
3017B
LA7925
3021B
-30mA)
32V zener
Electronic Volume Controller IC
flyback TV sanyo
transistor band color
decoders power ic
LA7930
op amp as comparator
Service mode tv
zener diode color band
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diode sg 96
Abstract: 33164 SG34164DM 34164
Text: LIN Doc #: 33164 SG33164/SG34164 SV P I o w e r n n o v a t i o n U ndervoltage P r o d u c t i o n S ensing D a t a DESCRIPTION KEY o ffers a 1.2V tem p eratu re co m p en sate d ban d g ap re feren ce , a p recision cu rren t o p en co lle cto r output. This
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SG33164/SG34164
diode sg 96
33164
SG34164DM
34164
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SMD diode C5C
Abstract: n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148
Text: SMD Switching Diodes TY P E NO. CA S E D E S C R IP TIO N V ram VOLTS MAX •o <mA) BAS28 SOT-143 DUAL S W ITC H IN G DIODE, ISO LATED 85 B AS 56 C LL914 SO T-143 DUA L HIG H C U R R E N T DIO DE, ISOLATED S O D -8O L E A D L E S S SW ITC H IN G DIODE C L L2003
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BAS28
BAS56
CLL914
CLL2003
CLL4150
CLL4448
CLL5001
CMPD914
CMPD1001
CMPD1001A
SMD diode C5C
n4148
smd code marking LF sot23
1N4148 SOD-80
diode
1n4148 smd diode
1n SMD diode
SMD diode CA6
diode a 4 w
Diode N4148
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crd e103
Abstract: N5314 E-562 crd e102 f701 sam l22 e-272
Text: 1N5283 CR240 thru thru 1N5314 CR252 E101L to E822 I nternational S em ico nducto r , I n c . CURRENT REGULATOR DIODES DO-35 and MELF Packages F101L to F562 A C R D is a Field E ffec t D iode w hich supplies co n stan t HIGH CURRENT LINE cu rren t D O -35 Package
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DO-35
1N5283
CR240
1N5314
CR252
E101L
F101L
DO-35
E-452
E-352
crd e103
N5314
E-562
crd e102
f701 sam l22
e-272
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DIODE 14 marking
Abstract: No abstract text available
Text: Short-form product specification Philips Semiconductors VHF variable capacitance diode BB619 FEATURES • A very high capacitance ratio. APPLICATIONS • VHF-band B up to 460 MHz in all-band tuners. DESCRIPTION VHF variable capacitance diode in planar technology.
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OD123
BB619
OD123)
DIODE 14 marking
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