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    BA74 Price and Stock

    Skyworks Solutions Inc 511BBA74M2500BAG

    XTAL OSC XO 74.2500MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 511BBA74M2500BAG 912 1
    • 1 $5.7
    • 10 $4.915
    • 100 $5.7
    • 1000 $3.67336
    • 10000 $3.4602
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    Mouser Electronics 511BBA74M2500BAG 1,152
    • 1 $5.15
    • 10 $4.89
    • 100 $4.34
    • 1000 $3.61
    • 10000 $3.61
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    Richardson RFPD 511BBA74M2500BAG 1
    • 1 -
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    Skyworks Solutions Inc 510FBA74M2500BAG

    XTAL OSC XO 74.2500MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 510FBA74M2500BAG 195 1
    • 1 $5.7
    • 10 $4.915
    • 100 $5.7
    • 1000 $3.67336
    • 10000 $3.4602
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    Mouser Electronics 510FBA74M2500BAG
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.67
    • 10000 $3.67
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    Skyworks Solutions Inc 510BBA74M2500BAG

    XTAL OSC XO 74.2500MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 510BBA74M2500BAG 124 1
    • 1 $5.53
    • 10 $4.769
    • 100 $5.53
    • 1000 $3.56434
    • 10000 $3.35746
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    Mouser Electronics 510BBA74M2500BAG
    • 1 $5.16
    • 10 $4.89
    • 100 $4.47
    • 1000 $3.61
    • 10000 $3.61
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    Skyworks Solutions Inc 510FBA74M2500AAG

    XTAL OSC XO 74.2500MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 510FBA74M2500AAG 107 1
    • 1 $5.68
    • 10 $5.381
    • 100 $5.68
    • 1000 $3.97617
    • 10000 $3.737
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    Mouser Electronics 510FBA74M2500AAG
    • 1 $5.68
    • 10 $5.39
    • 100 $4.92
    • 1000 $3.97
    • 10000 $3.97
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    Richardson RFPD 510FBA74M2500AAG 1
    • 1 -
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    Skyworks Solutions Inc 511ABA74M2500AAG

    XTAL OSC XO 74.2500MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 511ABA74M2500AAG 39 1
    • 1 $5.02
    • 10 $4.329
    • 100 $5.02
    • 1000 $3.23465
    • 10000 $3.04675
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    Richardson RFPD 511ABA74M2500AAG 1
    • 1 -
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    BA74 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA741931 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BA74 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112 PDF

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


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    TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 PDF

    MT29F8G08ABABA

    Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


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    MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08ABABA MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H PDF

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


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    TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 PDF

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB PDF

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204 PDF

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175 PDF

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh PDF

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215 PDF

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 PDF

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


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    TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


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    FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de PDF

    Micron NAND flash 32gb

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


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    FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de Micron NAND flash 32gb PDF

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash PDF

    K8P3215UQB

    Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
    Text: K8P3215UQB FLASH MEMORY 32Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8P3215UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P3215UQB K8P2815 K8p3215 K8P3215U k8p2815u K8P32 samsung nor flash Samsung MCP K8P6415 PDF

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64 PDF

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


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    TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145 PDF

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


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    TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT PDF

    Untitled

    Abstract: No abstract text available
    Text: Video ICs Video signal switcher BA7649A / BA7649AF The BA7649A and BA7649AF are five-channel analog multiplexers the IN5 pin can be used a mute input designed for use in video cassette recorders. They feature large dynamic range, and wide operating frequency range, and


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    BA7649A BA7649AF BA7649AF BA7649A BA7469A 51Min. PDF

    vlga

    Abstract: MT29F64G08 256Gb NAND
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


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    128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB vlga MT29F64G08 256Gb NAND PDF

    ad0612mx-g76

    Abstract: AD1224UB-F5 AD2512HB-BV7 AD0612XB AD0412LBC52 AD0612HB AD1224UB-F52 AD0812HB-C71GP AD0412HB-C52 AD061
    Text: D A T A - S H E E T E n g in e e r in g P r in te d BRUSHLESS A X IA L COOLING FANS. R e f: C u s to m e r ADDA M o d el NO. 0 7 /0 2 /0 2 lf A D 1224U B -F52 S a m p le s a t t a c h e d S a fe ty A p p ro v a l on: p ie c e ( s ) U L , CUL,T U V ,CE S p e c ific a tio n s


    OCR Scan
    1224U 120x120x38 D-51105 ad0612mx-g76 AD1224UB-F5 AD2512HB-BV7 AD0612XB AD0412LBC52 AD0612HB AD1224UB-F52 AD0812HB-C71GP AD0412HB-C52 AD061 PDF