diode BA 159
Abstract: No abstract text available
Text: BA 157.BA 159 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V
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Untitled
Abstract: No abstract text available
Text: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features !"#$ Mechanical Data %&$"' %&$"
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Untitled
Abstract: No abstract text available
Text: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features !"#$ Mechanical Data %&$"' %&$"
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diode BA 159
Abstract: ba 159 diode BA diode ba capacitance diode ba 157 BA 159 ba 157 diode
Text: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features !"#$ Mechanical Data %&$"' %&$"
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BA150
Abstract: BA157-BA159 BA158
Text: BA 157.BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 Plastic Voltage 400 to 1000 V. Current 1.0 A. at 50°C. 6.35 ± 0.2 58.5 min. • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm.
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DO-15
BA150
BA150
BA157-BA159
BA158
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BA150
Abstract: BA157-BA159 ba158 diode BA 159
Text: BA 157.BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 Plastic Voltage 400 to 1000 V. Current 1.0 A. at 50°C. 6.35 ± 0.2 58.5 min. • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm.
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DO-15
BA150
BA150
BA157-BA159
ba158
diode BA 159
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MSPD2018
Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for
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A17084
MSPD2018
m21 sot23 transistor
MSPD1012-H50
MSPD1000-E50/E50SM
mpn7620-et47
MSPD1012-E50
mpn7610
mbd1057
MMD0840
MPN7345
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diode BA 159
Abstract: in4937
Text: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g
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DO-41
UL94V-0
R0D1RS14
DGG174
diode BA 159
in4937
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BYT 1000
Abstract: diodes byt diodes byt 400 byx 12 800 D015 BA158 do218 byx 200
Text: u 'LB Q A G rlB B RECTIFIER DIODES Fast-recovery-diodes Type • V rrm V (A) ■fsm (A) If a v (V) If (A) (us) Case JEDEC VF at trr BA 157 BA 158 BA 159 400 600 1000 1.0 35 <1.3 1.0 <0.3 D015 BY 396 BY 397 BY 398 BY 399 RGP 30M 100 200 400 800 1000 3.0 60
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DO-201
O-220
DO-218
BYT 1000
diodes byt
diodes byt 400
byx 12 800
D015
BA158
do218
byx 200
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BA150
Abstract: No abstract text available
Text: FAGOR ^ BA 157 BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-IS Plastic -do •■ si s1 Voltage 400 to 1.000 V. C O eri s Current 1.0 A. at S0°C. 6 .3 5 to.a • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point,
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BYX58-200
Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Text: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A
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100mA
BYX58-200
byx 21
BYX 13 400 R
Diodes de redressement
MR05
PY 55
byx58
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IN4937
Abstract: in 4937 D0201 MR 1501 D0-201AD
Text: FAGOR^ Fast Recovery Diodes - Quick Guide TYPE FF 1001 to FF 1005 BA - 157 to BA - 159 1P643 to 1P648 IN 4933 to IN 4937 FF 1501 to FF 1510 BY 296 to BY 299 S BY 396 to BY 399 S MR 850 to MR 858 30DF6 CURRENT 1.0 A @ 45 °C 1.0 A @ 50 °C 1.0 A @ 45 °C 1.0 A
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1P643
1P648
30DF6
DO-41
DO-15
D0-201
IN4937
in 4937
D0201
MR 1501
D0-201AD
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ba 540 b
Abstract: 58A2 HVR062 L105 RS-296 BA 157 - 200
Text: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s DO -15 F - 126 58 A 2 Plastic Dimensions in mm. Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,
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DO-15
F-126
C2-17
DO-201AD
DO-27A
DO-201AE
ba 540 b
58A2
HVR062
L105
RS-296
BA 157 - 200
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fagor ba 159
Abstract: No abstract text available
Text: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s Dimensions in mm. D O-15 F - 126 58 A 2 Plastic Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,
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DO-201AD
DO-27A
DO-201AE
DO-201
fagor ba 159
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transistor 2TH
Abstract: transistor BA 13 BA157 transistor ba diodes redressement thomson
Text: S G S-THOMSON 5=10 1• 7 ^ 2 ^ 3 7 a a o a Q T H T O T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS 59C 02092 B A 1 5 7 ,T 4 ' ô J r . ' 3 D ►B A 1 5 9 ,T FA ST RECO VERY RECTIFIER DIODES D IO D E S D E R EDR ES S EM EN T R A P ID E / \ F A S T RECO VERY DIODES
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cb-210)
transistor 2TH
transistor BA 13
BA157
transistor ba
diodes redressement thomson
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Untitled
Abstract: No abstract text available
Text: S G S-THOMSON 5=10 1 • 7 ^ 2 ^ 3 7 a a o a Q T H T O 59C T H O M S O N -C S F 02092 4 ' ô J r ' 3 . D B A 157,T ► B A 159,T DIVISION SEMICONDUCTEURS DISCRETS FAST RECOVERY RECTIFIER DIODES D IO D E S D E R EDR ES S EM EN T R A P ID E / \ FAST RECOVERY DIODES
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
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BYF407
Abstract: BYF507 BYF506 BYF404 BYF405 BYF406 BYF508 BYF505 BYF504 BYF402
Text: ISKRA SENIC CAPS IN» 37E ]> 4603477 - - *- oaGini Ü m iSK -*£ ? diodes 1/ArgRTm K W t T -Û 3 -O I U rrm U rsm If a v Type If s m &ap 8.3 ms UF Ir t„ If = 1 A £>l = 25 °C at U rrm Û = 25 °C lP= + 1 0 m A In = — 10 mA V) (M ) (ns) (V) (V) (A) (A)
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T-03-0j
1N4936
BA157
BA158
BA159
BYF401
BYF402
BYF403
BYF404
BYF405
BYF407
BYF507
BYF506
BYF406
BYF508
BYF505
BYF504
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BY407A
Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Text: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C
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CB-210)
CB-26)
BYV88-
BY407A
BYV 88 800
BYV88-200
BY406A
Scans-00109689
BY407
BYV88-600
MC44
NS100-MA
CB-210
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FRI57
Abstract: FRi55 fri07 BAI 59 FRi52 BAI 57 BAi58 FRI53 EiC series BA150
Text: E i e SEUICONDUCTOR INC fe,ÖE D • OQDQOm fl P2 ■ EICS Fast recovery silicon diodes. 1.0 Amp. to 3 Amps. The plastic material carries U /L recognition 94V-0. Type A verage Rectified Current V AV (A) Peak Inverse Voltage V RRM at (°C) Repetitive Peak Forward
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Q000014
BA150
DO-41.
300UJ
150lJ)
FR155
FRI57
FR157-STR
BY290
FRi55
fri07
BAI 59
FRi52
BAI 57
BAi58
FRI53
EiC series
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esm diodes
Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
Text: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)
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D029pl.
lTamb50Â
D027pl.
esm diodes
181800r
c81 004
cb33
182100
REDRESSEMENT
ESM182-100R
87400
DRT76
C701
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DO21
Abstract: DO-21 IN1202A
Text: 12 & 25 AMPERE DIODES CONTINENTAL DEVICE INDIA 3SE D • 00DDD2b S ■ 'JZ, \n PROFESSIONAL/COMMERCIAL GRADE• GENERAL PURPOSE D IODES Av. Rectified Current Device Peak Reverse Max. Peak Voltage Wkg • Peak Forward Max. Reverse Voltage Reverse Voltage
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00DDD2b
DO-21
DO-41
DO21
DO-21
IN1202A
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ITT BA159
Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Text: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case
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4bfl2711
BA157
BA159
BA157
BA158
BA159
4b62711
BA157:
ITT BA159
diode ITT 157 ba
ITT BA157
ba159 diode
BA157 200
DIODE BA159
BA159 switching diode
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Untitled
Abstract: No abstract text available
Text: 5 i •rt- 1 9 ' i SMD Power Resistors Special Patented design eliminates need for leaded components. 4-terminal • Flexible J-bend terminations (patented eliminate the need for leaded components and reduce the chance of solder-joint break age due to thermal expansion and vibration.
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051b0b7
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sis-2 IR
Abstract: mml 600 33T4
Text: 12 & 25 AMPERE DIODES CONTINENTAL DEVICE INDIA 3SE D • 00DDD2b S "“T" PROFESSIONAL/COMMERCIAL GRADE GENERAL PURPOSE DIODES Device y lN /1 N /IN „ IN /•1N > IN 1N Peak Reverse Voltage Wkg • Vr Volts Max. Peak Reverse Voltage Vrrm Volts 12 12 12
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00DDD2b
O-237
sis-2 IR
mml 600
33T4
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