diode BA 159
Abstract: k 159 ba157
Text: Diotec BA 157 … BA 159 Fast Silicon Rectifiers Schnelle Silizium Gleichrichter Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 200…1000 V Ø 2.6 max Plastic case Kunststoffgehäuse Ø 0.8+0.05 DO-41 Weight approx. – Gewicht ca.
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DO-41
UL94V-0
diode BA 159
k 159
ba157
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PBY321611T-601Y
Abstract: PBY453215T-121Y-S PBY100505T-100Y-S SBY321611T-320Y-S PBY201209T-170Y-S PBY201209T-600Y PBY321611T R62- Diode smd PBY160808T-102Y-S PBY201209T-601
Text: INDEX YAGEO CORPORATION 2 34 39 42 46 49 52 64 70 76 91 104 109 118 124 135 135 138 142 143 144 147 148 150 153 157 159 178 193 208 216 218 220 222 228 241 252 254 258 261 276 278 280 286 Multilayer Ferrite Chip Beads [ SB/ PB/UP/NB/GB Series ] Multilayer Ferrite Chip Beads [ BA Series ]
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Multi1319B-R30M-N
MBPL1319B-R60M-N
MBPL1319B-R90M-N
MBPL1319B-1R2M-N
MBPL1220B-1R2M-N
MBPL1220B-1R5M-N
MBPL1217B-R30M-N
MBPL1217B-R60M-N
MBPL1217B-R90M-N
MBPL1319
PBY321611T-601Y
PBY453215T-121Y-S
PBY100505T-100Y-S
SBY321611T-320Y-S
PBY201209T-170Y-S
PBY201209T-600Y
PBY321611T
R62- Diode smd
PBY160808T-102Y-S
PBY201209T-601
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SMD INDUCTOR Marking Code
Abstract: smd diode UJ 64 A ssl0804t-220m-s SEC 222M SSL1306T-100M-S smd diode Uj SCDS104R smd diode marking UJ inductor smd we 470 SCD0705
Text: INDEX YAGEO CORPORATION 2 34 39 42 46 49 52 64 70 76 91 104 109 118 124 135 135 138 142 143 144 147 148 150 153 157 159 178 193 208 216 218 220 222 228 241 252 254 258 261 276 278 280 286 Multilayer Ferrite Chip Beads [ SB/ PB/UP/NB/GB Series ] Multilayer Ferrite Chip Beads [ BA Series ]
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1000Hrs.
24Hrs.
SMD INDUCTOR Marking Code
smd diode UJ 64 A
ssl0804t-220m-s
SEC 222M
SSL1306T-100M-S
smd diode Uj
SCDS104R
smd diode marking UJ
inductor smd we 470
SCD0705
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AD-04
Abstract: AD-01 AD-02 AD-03 BA-10E1UD BA-10G1UD BA-10H1UD BA-10R1UD BA-10Y1UD BA 30 C
Text: SINCE 1981 Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Chip Common Cathode BA-10R1UD GaAsP/Red 655 40 80 40 200 1.7 2.0 1.4 GaP/ Bright Red 700 90 40 15 50 2.2 2.5 2.0 BA-10G1UD GaP/ Green 568 30 80 30 150 2.2
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BA-10R1UD
10Bar
BA-10H1UD
BA-10G1UD
BA-10Y1UD
BA-10E1UD
BA-15D15UD
AD-04
AD-01
AD-02
AD-03
BA-10E1UD
BA-10G1UD
BA-10H1UD
BA-10R1UD
BA-10Y1UD
BA 30 C
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BA-9Y4
Abstract: AD-04 BA part 2 diode BA 398 IAE3010-BPKG AD-01 AD-02 AD-03 BA-10E1UD BA-10G1UD
Text: Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Chip Common Cathode Material/Emitted Color BA-10R1UD GaAsP/Red 655 40 80 40 200 1.7 2.0 1.4 GaP/ Bright Red 700 90 40 15 50 2.2 2.5 2.0 BA-10G1UD GaP/ Green 568 30
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BA-10R1UD
10Bar
BA-10H1UD
BA-10G1UD
BA-10Y1UD
BA-10E1UD
BA-15D15UD
BA-9Y4
AD-04
BA part 2
diode BA 398
IAE3010-BPKG
AD-01
AD-02
AD-03
BA-10E1UD
BA-10G1UD
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32MX72
Abstract: DTM63617 DDR RAM POWER SUPPLY DTM63615 DTM63616 DTM63629 PC2100 2K EEPROM EEPROM14
Text: DTM63617, DTM63629, DTM63616, DTM63615 512MB-64Mx72, 256MB-32Mx72, 256MB-32Mx72, 128MB16Mx72, 184-Pin Registered DDR SDRAM DIMM Identification DTM63617 64Mx72 DTM63616 32Mx72 DTM63629 32MX72 DTM63615 16Mx72 Performance range PC2100 266MHz/CL=2.5 200MHz/CL=2
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DTM63617,
DTM63629,
DTM63616,
DTM63615
512MB-64Mx72,
256MB-32Mx72,
128MB16Mx72,
184-Pin
DTM63617
32MX72
DDR RAM POWER SUPPLY
DTM63615
DTM63616
DTM63629
PC2100
2K EEPROM
EEPROM14
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DTM63618
Abstract: DTM63619 DTM63620 EEPROM14
Text: DTM63620, DTM63619, DTM63618 512MB-64Mx72, 256MB-32Mx72, 128MB-16Mx72, 184-Pin Registered DDR SDRAM DIMM Identification Performance range DTM63620 64Mx72 DTM63619 32Mx72 DTM63618 16Mx72 PC1600 200MHz/CL=2 Features Description Utilizes 100MHz DDR SDRAM Auto & self refresh capability DTM63620 is 8K Ref/64 MS,
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DTM63620,
DTM63619,
DTM63618
512MB-64Mx72,
256MB-32Mx72,
128MB-16Mx72,
184-Pin
DTM63620
64Mx72
DTM63619
DTM63618
EEPROM14
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M2SSK1-101
Abstract: C3SS1-10B-20 MP1-11r MPMT3-11R CL-520Y MEPY1-1024 ML1-100W MCB-20 KA2-2223 KA2-2221
Text: Ohjauskojeet Valintaopas ja SSTL-hakemisto Compact-tuotteet tyyppi C • Modular-tuotteet tyyppi M 1SFC150001B1801 Ohjauskojeet 1 FI 03_06 ABB:N OHJAUSKOJEIDEN HYVÄKSYNNÄT JA MERILUOKITUKSET Compactohjauskojeet Modularohjauskojeet X X X X X X X X X X X X
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1SFC150001B1801
A003248
SK615502-B
SK615516-1
SK615546-13
SK615546-5
M2SSK1-101
C3SS1-10B-20
MP1-11r
MPMT3-11R
CL-520Y
MEPY1-1024
ML1-100W
MCB-20
KA2-2223
KA2-2221
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DTM63621
Abstract: DTM63622 PC2100 DDR RAM POWER SUPPLY
Text: DTM63621, 63622 1GB-128Mx72, 184-Pin Registered DDR SDRAM DIMM Identification DTM63621: PC2100 266 MHz/CL = 2.5 DTM63622: PC1600 200 MHz/CL = 2 Features Description The 63621 utilizes 133MHz DDR SDRAM The 63622 utilizes 100MHz DDR SDRAM The Dataram DTM63621 assembly is a 1.2” high
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DTM63621,
1GB-128Mx72,
184-Pin
DTM63621:
PC2100
DTM63622:
PC1600
133MHz
100MHz
DTM63621
DTM63622
DDR RAM POWER SUPPLY
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DTM63614
Abstract: No abstract text available
Text: DTM63614 1GB-128M x 72, 184 Pin Registered DDR SDRAM DIMM Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM Auto & self refresh capability SSTL_2 compatible inputs and outputs VDD/VDDQ= 2.5V +/- 0.2V MRS cycle, with address key, programs Latency Access
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DTM63614
1GB-128M
266MHz/CL
200MHz/CL
133MHz
184-pin
DTM63614
DTM6361ANCE
100MHz)
DQ0-DQ63,
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hypertac connector insertion tools
Abstract: DOD-C-55302 YSK0 solder cup awg 16 Hypertac connector CA 358 AE male contact solder pins hypertac ypn006 ka series connector YPN0
Text: 2 & 3 Row KA SERIES DOD-C-55302 QPL’D CONNECTORS 17, 29, 33, 41, 53, 62, 65, 72, 80, 84, 96, 98, 120, 126, 160 & 320 Contacts CONNECTOR DIMENSIONS 17 to 65 CONTACTS 1 Plug .311 7.90 .124 (3.15) .154 (3.90) 2 4 E F A D C B 6 5 1 .250 (6.35) 4 3 2 3 Receptacle
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DOD-C-55302
MIL-C-55302
1--888--HYPERTAC
hypertac connector insertion tools
YSK0
solder cup awg 16
Hypertac connector
CA 358 AE
male contact solder pins hypertac
ypn006
ka series connector
YPN0
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DTM67600
Abstract: sodimm pinout
Text: DTM67600 256MB - 32M x 64, 200-Pin Unbuffered DDR SODIMM Identification Part Number: DTM67600 Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM The Dataram DTM67600 is a high-speed, random access, 256MB module configured as one physical
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DTM67600
256MB
200-Pin
266MHz/CL
200MHz/CL
133MHz
DTM67600
sodimm pinout
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Untitled
Abstract: No abstract text available
Text: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-28-13 BA 3-28-13 TITLE: Ceramic Crystal Oscillator PART #: DATE: A
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MIL-STD-790
MIL-PRF-38534
OC7E34674XCCSRX
66727R
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Untitled
Abstract: No abstract text available
Text: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-28-13 BA 3-28-13 TITLE: Ceramic Crystal Oscillator PART #: DATE: A
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MIL-STD-790
MIL-PRF-38534
LV0774175XMBSRX
66728R
vib15
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Untitled
Abstract: No abstract text available
Text: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date BA 5-16-13 BAA 5-16-13 TITLE: JL9 Crystal Oscillator Assembly PART #: DATE:
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MIL-STD-790
MIL-PRF-38534
JL9T16000XSCERX
66753R
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Untitled
Abstract: No abstract text available
Text: B2B SMT Connectors 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email [email protected] • Internet http://www.advintcorp.com B2B™ High Density SMT Board to Board Connectors Standard Footprints
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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BYT 1000
Abstract: diodes byt diodes byt 400 byx 12 800 D015 BA158 do218 byx 200
Text: u 'LB Q A G rlB B RECTIFIER DIODES Fast-recovery-diodes Type • V rrm V (A) ■fsm (A) If a v (V) If (A) (us) Case JEDEC VF at trr BA 157 BA 158 BA 159 400 600 1000 1.0 35 <1.3 1.0 <0.3 D015 BY 396 BY 397 BY 398 BY 399 RGP 30M 100 200 400 800 1000 3.0 60
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DO-201
O-220
DO-218
BYT 1000
diodes byt
diodes byt 400
byx 12 800
D015
BA158
do218
byx 200
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BYX58-200
Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Text: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A
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100mA
BYX58-200
byx 21
BYX 13 400 R
Diodes de redressement
MR05
PY 55
byx58
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Untitled
Abstract: No abstract text available
Text: SIL I C ON FAST I FAVM VRRM I FSM tp=10m s T Y P E V _<Ai_ 0 6 5 T A rm s BA 157 BA 158 BA 159 4us 0 .6 5 DRR DRR DRR DRR DRR 3 104 204 404 604 114 A r l uS 100 1 .2 450 ! 0 .4 # 400 # Tr = 2 5 °C 12 0 .9 7 0 .4 0 5 100 0 .8 7 143 : M= 1 3 5 ° C
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DO-27A
-220d
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ba 540 b
Abstract: 58A2 HVR062 L105 RS-296 BA 157 - 200
Text: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s DO -15 F - 126 58 A 2 Plastic Dimensions in mm. Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,
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DO-15
F-126
C2-17
DO-201AD
DO-27A
DO-201AE
ba 540 b
58A2
HVR062
L105
RS-296
BA 157 - 200
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fagor ba 159
Abstract: No abstract text available
Text: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s Dimensions in mm. D O-15 F - 126 58 A 2 Plastic Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,
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DO-201AD
DO-27A
DO-201AE
DO-201
fagor ba 159
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Untitled
Abstract: No abstract text available
Text: 5 i •rt- 1 9 ' i SMD Power Resistors Special Patented design eliminates need for leaded components. 4-terminal • Flexible J-bend terminations (patented eliminate the need for leaded components and reduce the chance of solder-joint break age due to thermal expansion and vibration.
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051b0b7
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cannon 20-8
Abstract: No abstract text available
Text: 2mm Interconnect TEMPUS C B C 20 Design Notes Shroud/Tail Calculation Shroud Base 3,40 mm Tempus Tail Code Backplane Thickness mm inch 1,80 (.071) 1,90 (.075) 2,00 (.079) 2,10 (.083) 2,20 (.087) 2,30 (.091) 2,40 (.094) 2,50 (.098) 2,60 (.102) 2,70 (.106)
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48b237
cannon 20-8
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